Inventor · disambiguated record
Wen-Hsi Lee
Also filed as: LEE WEN-HSI
22 granted patents·11 pending applications·136 citations·filing 1998–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD10UNIV NAT CHENG KUNG10IND TECH RES INST4YAGEO CORP4KONINKL PHILIPS ELECTRONICS NV1
Top patents by PatentIndex Score
33 records- 0195US9928947B1Method of fabricating highly conductive low-ohmic chip resistor having electrodes of base metal or base-metal alloyUNIV NAT CHENG KUNG·Filed 2017·Granted Mar 27, 2018·7 cites·10 claims
- 0287US6437970B1Capacitor comprising a BCZT dielectricKONINKL PHILIPS ELECTRONICS NV·Filed 2000·Granted Aug 20, 2002·45 cites·7 claims
- 0387US2025366098A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0484US12464790B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 0583US12289877B2Semiconductor device including unilaterally extending gates and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·20 claims
- 0681US7381283B2Method for reducing shrinkage during sintering low-temperature-cofired ceramicsYAGEO CORP·Filed 2004·Granted Jun 3, 2008·37 cites·3 claims
- 0780US11844205B2Semiconductor device including trimmed-gates and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 12, 2023·0 cites·20 claims
- 0876US7842946B2Electronic devices with hybrid high-k dielectric and fabrication methods thereofIND TECH RES INST·Filed 2007·Granted Nov 30, 2010·7 cites·11 claims
- 0973US12021117B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 1073US11587937B2Method of forming semiconductor device including trimmed-gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 1171US6893710B2Multilayer ceramic compositionYAGEO CORP·Filed 2003·Granted May 17, 2005·16 cites·4 claims
- 1265US7138352B2Dielectric material and the method of preparing the sameYAGEO CORP·Filed 2005·Granted Nov 21, 2006·5 cites·29 claims
- 1364US9735231B2Block layer in the metal gate of MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 15, 2017·1 cites·20 claims
- 1462US11037935B2Semiconductor device including trimmed-gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 1559US11810720B2Method for fabricating terminal electrode of multilayer ceramic capacitor having inner electrodes printed on full area together with protective layersUNIV NAT CHENG KUNG·Filed 2021·Granted Nov 7, 2023·0 cites·7 claims
- 1659US6043974ACeramic (multilayer) capacitor and ceramic composition for use in such capacitorPHILIPS CORP·Filed 1998·Granted Mar 28, 2000·18 cites·3 claims
- 1757US10373962B2Semiconductor device including trimmed-gates and method for generating layout of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 6, 2019·0 cites·20 claims
- 1857US2025246346A1Method of sintering solderable base metals in air atmosphere and manufacturing alloy componentsUNIV NAT CHENG KUNG·Filed 2024·Application pending·0 cites
- 1956US10840330B2Block layer in the metal gate of MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 17, 2020·0 cites·20 claims
- 2051US2019392968A1Thick-Film Aluminum Electrode Paste with Pretreatment before Metal Plating for Fabricating Chip ResistorWENSHOU CO LTD·Filed 2019·Application pending·0 cites
- 2147US10290403B2Methods of fabricating chip resistors using aluminum terminal electrodesUNIV NAT CHENG KUNG·Filed 2016·Granted May 14, 2019·0 cites·11 claims
- 2246US8815632B2Order vacancy compound and method of manufacturing the sameUNIV NAT CHENG KUNG·Filed 2012·Granted Aug 26, 2014·0 cites·18 claims
- 2346US2009087944A1Electronic devices with hybrid high-k dielectric and fabrication methods thereofIND TECH RES INST·Filed 2008·Application pending·0 cites
- 2446US2019189312A1Pretreatment of Thick-Film Aluminum Electrode for Metal PlatingUNIV NAT CHENG KUNG·Filed 2017·Application pending·0 cites
- 2544US10174210B2Method of fabricating high-conductivity thick-film aluminum pasteUNIV NAT CHENG KUNG·Filed 2015·Granted Jan 8, 2019·0 cites·3 claims
- 2644US2015235953A1Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG·Filed 2014·Application pending·0 cites
- 2743US10259172B2Fabrication method of magnetic deviceIND TECH RES INST·Filed 2015·Granted Apr 16, 2019·0 cites·21 claims
- 2843US2017218512A1Method of Fabricating High-Conductivity Thick-film Copper Paste Coated with Nano-Silver for Being Sintered in the AirUNIV NAT CHENG KUNG·Filed 2016·Application pending·0 cites
- 2942US2005095464A1Ultralow firing temperature compensating ceramic composition for pure silver electrode, sintering flux and laminated ceramic element obtained therefromYAGEO CORP·Filed 2003·Application pending·0 cites
- 3041US2014151884A1Self-forming barrier structure and semiconductor device having the sameIND TECH RES INST·Filed 2013·Application pending·0 cites
- 3138US2019143405A1Methods of Fabricating Conductive Thick-Film Pastes of Base Metals with High Conductivity AchievedUNIV NAT CHENG KUNG·Filed 2017·Application pending·0 cites
- 3235US9552908B2Chip resistor device having terminal electrodesUNIV NAT CHENG KUNG·Filed 2015·Granted Jan 24, 2017·0 cites·9 claims
- 3333US2003168150A1Method and constrain layer for reducing shrinkage during sintering low-temperature ceramicPHYCOMP TAIWAN LTD·Filed 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Wen-Hsi Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →