Electronic devices with hybrid high-k dielectric and fabrication methods thereof

Abstract

Electronic devices with hybrid high-k dielectric and fabrication methods thereof. The electronic device includes a substrate. A first electrode is disposed on the substrate. Hybrid high-k multi-layers comprising a first dielectric layer and a second dielectric layer are disposed on the substrate, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without interface therebetween. A second electrode is formed on the hybrid multi-layers.

1 - 12 . (canceled) 
   
   
       13 . A method for manufacturing an electronic device with hybrid high-k dielectric, comprising:
 providing a substrate;   forming a first electrode on the substrate;   sequentially forming a first dielectric layer and a second dielectric layer creating hybrid multi-layers, wherein the first dielectric layer and the second dielectric layer are solvable and substantially without an interface therebetween; and   forming a second electrode on the hybrid multi-layers.   
   
   
       14 . The method as claimed in  claim 13 , wherein the electronic device comprises a field effect transistor, an organic thin film transistor (OTFT), an inorganic thin film transistor, or a metal-insulator-metal (MIM) capacitor. 
   
   
       15 . The method as claimed in  claim 14 , wherein the OTFT comprises a top contact transistor structure, wherein the second electrode comprises distanced source and drain regions and a semiconductor layer serves as an activation layer of the OTFT, and wherein the semiconductor layer is covered by the distanced source and drain regions. 
   
   
       16 . The method as claimed in  claim 14 , wherein the OTFT comprises a bottom contact transistor structure, wherein the second electrode comprises distanced source and drain regions and a semiconductor layer serves as an activation layer of the OTFT, and wherein the distanced source and drain regions are partly covered by the semiconductor layer. 
   
   
       17 . The method as claimed in  claim 13 , wherein the first dielectric layer comprises a high dielectric constant (high-k) dielectric material comprising an organic/inorganic hybrid material with a combination of high-k nano-particles and a photosensitive and/or a non-photosensitive polymer matrix. 
   
   
       18 . The method as claimed in  claim 17 , wherein the high-k nano-particles comprise metal oxide nano-particles, ferroelectric insulation nano-particles, or combinations thereof. 
   
   
       19 . The method as claimed in  claim 18 , wherein the metal oxide nano-particles comprise Al2O3, TiO2, ZrO2, Ta2O5, SiO2, BaO, HfO2, GeO2, Y2O3, CeO2, or combinations thereof. 
   
   
       20 . The method as claimed in  claim 18  wherein the ferroelectric insulation nano-particles comprise BaTiO3, SrTiO3, Bi4Ti3O12, (BaxSr1−x)TiO3, (BaxZr1−x)TiO3, (PbxZr1−x)TiO3, or combinations thereof. 
   
   
       21 . The method as claimed in  claim 17 , wherein the photosensitive and/or non-photosensitive polymer matrix comprises polyimide, polyamide, polyvinyl alcohol, polyvinyl phenol, polyacrylate (PA), epoxide, polyurethane, fluoropolymer, polysiloxane, polyester, polyacrylonitrile, polystyrene, or polyethylene. 
   
   
       22 . The method as claimed in  claim 13 , wherein the second dielectric layer is soluble to the first dielectric layer, and wherein the second dielectric layer and the first dielectric layer are of the same polymer material. 
   
   
       23 . The method as claimed in  claim 13 , wherein the second dielectric layer is soluble to the first dielectric layer, and wherein the second dielectric layer and the first dielectric layer are of different polymer materials. 
   
   
       24 . The method as claimed in  claim 13 , wherein the second dielectric layer is formed by a solution process on the first dielectric layer such that an invisible interface substantially exists between the first and the second dielectric layers. 
   
   
       25 . The method as claimed in  claim 24 , wherein the solution process comprises directly forming a patterned structure. 
   
   
       26 . The method as claimed in  claim 25 , wherein the step of directly forming a patterned structure comprises slot die coating, flexographic coating, inkjet printing, microcontact printing, nanoimprinting, or screen printing. 
   
   
       27 . The method as claimed in  claim 24 , wherein the solution process comprises forming a thin film, and then patterning it. 
   
   
       28 . The method as claimed in  claim 27 , wherein the step of forming the thin film comprises spin coating, slot die coating, dip coating, or spraying. 
   
   
       29 . The method as claimed in  claim 27 , wherein the thin film is patterned by lithography, etching, or laser ablation.