Inventor · disambiguated record
Weipeng Li
Also filed as: LI WEIPENG
14 granted patents·6 pending applications·81 citations·filing 2008–2025
91Inventor score
Files withCHEN XIANGDONG4IBM4BANK OF NEW YORK MELLON2LI WEIPENG2ZHANJIANG NEW NANFANG ELECTRICAL APPLIANCE CO LTD2
Top patents by PatentIndex Score
20 records- 0192US7867839B2Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistorsIBM·Filed 2008·Granted Jan 11, 2011·21 cites·14 claims
- 0291US11063840B1Methods and systems for predicting successful data transmission during mass communications across computer networks featuring disparate entities and imbalanced data sets using machine learning modelsBANK OF NEW YORK MELLON·Filed 2020·Granted Jul 13, 2021·4 cites·20 claims
- 0387US8445969B2High pressure deuterium treatment for semiconductor/high-K insulator interfaceCHEN XIANGDONG·Filed 2011·Granted May 21, 2013·8 cites·24 claims
- 0487US8298897B2Asymmetric channel MOSFETCHEN XIANGDONG·Filed 2012·Granted Oct 30, 2012·8 cites·9 claims
- 0585US7893502B2Threshold voltage improvement employing fluorine implantation and adjustment oxide layerIBM·Filed 2009·Granted Feb 22, 2011·12 cites·17 claims
- 0684US8237197B2Asymmetric channel MOSFETCHEN XIANGDONG·Filed 2010·Granted Aug 7, 2012·7 cites·20 claims
- 0778US11258674B1Methods and systems for predicting successful data transmission during mass communications across computer networks featuring disparate entities and imbalanced data sets using machine learning modelsBANK OF NEW YORK MELLON·Filed 2021·Granted Feb 22, 2022·1 cites·20 claims
- 0877US7883953B2Method for transistor fabrication with optimized performanceFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Feb 8, 2011·7 cites·18 claims
- 0973USD896671SProfile gaugeLI WEIPENG·Filed 2020·Granted Sep 22, 2020·6 cites·1 claims
- 1069US2025289775A1Supported catalyst and preparation method thereof, and method for preparing high-carbon ketoneZHEJIANG SAINON CHEMICAL CO LTD·Filed 2024·Application pending·0 cites
- 1164US8563394B2Integrated circuit structure having substantially planar N-P step height and methods of formingLI WEIPENG·Filed 2011·Granted Oct 22, 2013·2 cites·15 claims
- 1256US2025021086A1Vision-based enhanced omni-directional defect detection apparatus and methodSCHOOL OF INFORMATION AND INTELLIGENT ENGINEERING ZHEJIANG WANLI UNIV·Filed 2023·Application pending·0 cites
- 1355US2025387780A1Method for preparing supported transition metal catalyst, supported transition metal catalyst and use thereof in condensation coupling synthesis of high-carbon ketone from alpha-h-containing ketone and alcoholZHEJIANG SAINON CHEMICAL CO LTD·Filed 2025·Application pending·0 cites
- 1451US8623714B2Spacer protection and electrical connection for array devicePARK JAE-EUN·Filed 2010·Granted Jan 7, 2014·1 cites·15 claims
- 1548US2018263402A1Electric cooker with fastening lockZHANJIANG NEW NANFANG ELECTRICAL APPLIANCE CO LTD·Filed 2018·Application pending·0 cites
- 1646USD840739SElectric rice cookerZHANJIANG NEW NANFANG ELECTRICAL APPLIANCE CO LTD·Filed 2017·Granted Feb 19, 2019·4 cites·1 claims
- 1745US12167510B2High frequency and power-adjustable electronic heating type device and method for operating the sameINNOSCIENCE SUZHOU TECHNOLOGY HOLDING CO LTD·Filed 2020·Granted Dec 10, 2024·0 cites·19 claims
- 1839US8106462B2Balancing NFET and PFET performance using straining layersCHEN XIANGDONG·Filed 2010·Granted Jan 31, 2012·0 cites·20 claims
- 1937US2010006841A1Dual metal gate transistor with resistor having dielectric layer between metal and polysiliconIBM·Filed 2008·Application pending·0 cites
- 2036US2013032897A1Mosfet gate electrode employing arsenic-doped silicon-germanium alloy layerIBM·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →