Inventor · disambiguated record
Wei-Wu Liao
Also filed as: LIAO WEI-WU
12 granted patents·4 pending applications·60 citations·filing 1998–2016
89Inventor score
Top patents by PatentIndex Score
16 records- 0172US9741446B2Memory system with small size antifuse circuit capable of voltage boostEMEMORY TECHNOLOGY INC·Filed 2016·Granted Aug 22, 2017·3 cites·20 claims
- 0261US6627551B2Method for avoiding microscratch in interlevel dielectric layer chemical mechanical polishing processUNITED MICROELECTRONICS CORP·Filed 2001·Granted Sep 30, 2003·8 cites·19 claims
- 0354US6281067B1Self-aligned silicide process for forming silicide layer over word lines in DRAM and transistors in logic circuit regionUNITED MICROELECTRONICS CORP·Filed 1999·Granted Aug 28, 2001·16 cites·11 claims
- 0449US8867279B2Flash memory apparatus with reference word linesTSAI YU-HSIUNG·Filed 2012·Granted Oct 21, 2014·1 cites·21 claims
- 0546US6972606B2Delay circuits and related apparatus for extending delay time by active feedback elementsEMEMORY TECHNOLOGY INC·Filed 2004·Granted Dec 6, 2005·4 cites·8 claims
- 0641US6281081B1Method of preventing current leakage around a shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 1998·Granted Aug 28, 2001·9 cites·27 claims
- 0738US6303465B1Method of forming low leakage current borderless contactUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 16, 2001·8 cites·12 claims
- 0836US6153479AMethod of fabricating shallow trench isolation structuresUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 28, 2000·6 cites·14 claims
- 0936US2004056248A1Test key for detecting electrical isolation between a word line and a deep trench capacitor in dram cellsFiled 2002·Application pending·0 cites
- 1035US6727180B2Method for forming contact windowUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 27, 2004·0 cites·16 claims
- 1134US6284647B1Method to improve the uniformity of chemical mechanical polishingUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 4, 2001·4 cites·4 claims
- 1234US2001008785A1Method of forming a bottom electrode of a capacitor in a dynamic random access memory cellFiled 2001·Application pending·0 cites
- 1331US6200880B1Method for forming shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 13, 2001·1 cites·15 claims
- 1430US6368971B2Method of manufacturing bottom electrode of capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 9, 2002·0 cites·19 claims
- 1528US2002072231A1Method of forming a self-aligned silicideUNITED MICROELECTRONICS CORP·Filed 2000·Application pending·0 cites
- 1626US2003184360A1Charge pump for flash memory with serially connected capacitors for preventing breakdownFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →