Inventor · disambiguated record
Wen-Kai Lin
Also filed as: LIN WEN-KAI
27 granted patents·32 pending applications·36 citations·filing 2016–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD41UNITED MICROELECTRONICS CORP9UNIV NAT CENTRAL7TAWAN SEMICONDUCTOR MFG CO LTD1ZIONTECH PTE LTD1
Top patents by PatentIndex Score
59 records- 0197US11664441B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·4 cites·20 claims
- 0296US11923432B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·4 cites·20 claims
- 0395US10256155B1Method for fabricating single diffusion break structure directly under a gate lineUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 9, 2019·16 cites·20 claims
- 0491US11901439B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 0590US11444177B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 0689US11854632B2Semiconductor memory structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0789US11217679B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·2 cites·20 claims
- 0886US2025351528A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0983US12363979B2Nanosheet field-effect transistor device including multi-layer spacer film and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1083US10833170B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·2 cites·20 claims
- 1183US2025301746A1Reducing k values of dielectric films through annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1282US12426335B2Reducing k values of dielectric films through annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 1381US12324208B2Method for manufacturing semiconductor device including annealing treatment of inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 1481US10490650B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·2 cites·20 claims
- 1580US12249639B2Semiconductor device including multiple inner spacers with different etch rates and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 11, 2025·0 cites·20 claims
- 1680US2025351522A1Under epitaxy isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1780US2025366047A1Inner Spacers for Gate-All-Around Devices and Manufacturing Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1880US2025351476A1Semiconductor Device Including Air Spacer and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1979US2024113202A1Low-K Gate Spacer and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2079US2024395902A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2179US2024387681A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2278US12500115B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Dec 16, 2025·0 cites·10 claims
- 2378US12009407B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 2477US2025338589A1Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2575US2025194202A1Semiconductor Device Including Multiple Inner Spacers with Different Etch Rates and Method of MakingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2675US2025318217A1Transistor gate isolation structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2774US12206012B2Reducing K values of dielectric films through annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·20 claims
- 2874US2025366041A1Inner Spacers for Gate-All-Around Devices and Manufacturing Methods ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2974US2023268416A1Semiconductor Devices and Methods of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3073US12142668B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 3173US2024395893A1Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3271US11855182B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·20 claims
- 3371US11545559B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 3470US2024332401A1Method of forming a nano-fet semiconductor deviceTAWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3567US10247774B2Test key structure and method of measuring resistance of viasUNITED MICROELECTRONICS CORP·Filed 2016·Granted Apr 2, 2019·1 cites·19 claims
- 3666US12040382B2Method of forming a nano-FET semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·0 cites·20 claims
- 3765US12080775B2Semiconductor device and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
- 3865US2023378256A1Transistor Gate Isolation Structures and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3964US2023369428A1Under epitaxy isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4063US2025374633A1Structure and formation method of semiconductor device with inner spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4163US2023261045A1Semiconductor Device Including Air Spacer and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4262US2025374605A1Gate-all-around device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4362US2025374634A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4461US11682711B2Semiconductor device having multi-layered gate spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 4561US2025189796A1Mixed reality display deviceUNIV NAT CENTRAL·Filed 2024·Application pending·0 cites
- 4657US12429375B2Spectrometer system with volume holographic light guide elementUNIV NAT CENTRAL·Filed 2024·Granted Sep 30, 2025·0 cites·7 claims
- 4757US2025176208A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 4857US2025089281A1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 4957US2025355252A1Mixed reality display deviceUNIV NAT CENTRAL·Filed 2024·Application pending·0 cites
- 5055US2025071983A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 59 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →