Inventor · disambiguated record
Wei-Yip Loh
Also filed as: LOH WEI-YIP
41 granted patents·29 pending applications·116 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD56LOH WEI-YIP5SEMATECH INC4AGENCY SCIENCE TECH & RES3AGENCY FOR SCEINCE TECHNOLOGY1
Top patents by PatentIndex Score
70 records- 0197US11232947B1Ammonium fluoride pre-clean protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·6 cites·20 claims
- 0293US11348839B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·5 cites·20 claims
- 0392US10755917B2Treatment for adhesion improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·5 cites·20 claims
- 0492US10535748B2Method of forming a contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·6 cites·20 claims
- 0592US7294890B2Fully salicided (FUSA) MOSFET structureAGENCY SCIENCE TECH & RES·Filed 2005·Granted Nov 13, 2007·24 cites·20 claims
- 0691US11373905B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·2 cites·20 claims
- 0791US8362494B2Electro-optic device with novel insulating structure and a method for manufacturing the sameAGENCY SCIENCE TECH & RES·Filed 2007·Granted Jan 29, 2013·26 cites·21 claims
- 0887US8436422B2Tunneling field-effect transistor with direct tunneling for enhanced tunneling currentLOH WEI-YIP·Filed 2010·Granted May 7, 2013·11 cites·5 claims
- 0985US12300542B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 1085US2025287628A1Contact with a Silicide RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1184US12218012B2Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1283US2025293088A1Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1382US11342225B2Barrier-free approach for forming contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 1482US9029218B2Tunneling field-effect transistor with direct tunneling for enhanced tunneling currentSEMATECH INC·Filed 2013·Granted May 12, 2015·6 cites·4 claims
- 1581US12009200B2Treatment for adhesion improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 1680US2025063783A1Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1779US12328890B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 1879US12300496B2Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1979US11915976B2Semiconductor device pre-cleaningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 2079US11810826B2Semiconductor devices with stacked silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 2179US2024387180A1Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2279US2025351442A1Selective silicide for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2379US2025239762A1Ammonium fluoride pre-clean protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2477US10504834B2Contact structure and the method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 2577US8421165B2Apparatus, system, and method for tunneling MOSFETs using self-aligned heterostructure source and isolated drainLOH WEI-YIP·Filed 2010·Granted Apr 16, 2013·5 cites·18 claims
- 2677US2025359278A1Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2777US2024332076A1Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2876US12300900B2Ammonium fluoride pre-clean protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 2976US12166078B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 3076US11901229B2Barrier-free approach for forming contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 3176US2025159965A1Method of manufacturing semiconductor devices with multiple silicide regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3276US2025351506A1Device-Level Interconnects for Stacked Transistor Structures and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3375US12087642B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 3475US2024387288A1Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3573US11031286B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·1 cites·20 claims
- 3673US2025285962A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3772US7682914B2Fully salicided (FUCA) MOSFET structureAGENCY FOR SCIENCE TECHNOLOLGY·Filed 2007·Granted Mar 23, 2010·6 cites·20 claims
- 3871US11742210B2Deposition window enlargementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 3971US8178939B2Interfacial barrier for work function modification of high performance CMOS devicesLOH WEI-YIP·Filed 2009·Granted May 15, 2012·5 cites·18 claims
- 4070US12501657B2Selective silicide for stacked multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 4170US11594410B2Treatment for adhesion improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 4270US11411094B2Contact with a silicide regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 4369US12046510B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 4469US2024413211A1Device-Level Interconnects for Stacked Transistor Structures and Methods of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4568US12433006B2Semiconductor device with conductive liners over silicide structures and method of making the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 30, 2025·0 cites·20 claims
- 4668US12272621B2Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 4767US11676868B2Selective dual silicide formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 4867US2025226291A1Buried conductive structure in semiconductor substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4965US11335774B2Contact structure for semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·0 cites·19 claims
- 5064US12327788B2Gate to source drain interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
Showing the top 50 of 70 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →