Inventor · disambiguated record
Wen-Yi Teng
Also filed as: TENG WEN-YI
14 granted patents·6 pending applications·59 citations·filing 2008–2021
89Inventor score
Top patents by PatentIndex Score
20 records- 0195US8709901B1Method of forming an isolation structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Apr 29, 2014·26 cites·16 claims
- 0288US9362358B2Spatial semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jun 7, 2016·6 cites·5 claims
- 0388US8536038B2Manufacturing method for metal gate using ion implantationWang shao-wei·Filed 2011·Granted Sep 17, 2013·10 cites·35 claims
- 0487US8937369B2Transistor with non-uniform stress layer with stress concentrated regionsUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jan 20, 2015·7 cites·21 claims
- 0580US8895435B2Polysilicon layer and method of forming the sameLIN CHIEN-LIANG·Filed 2011·Granted Nov 25, 2014·4 cites·13 claims
- 0679US8927388B2Method of fabricating dielectric layer and shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2012·Granted Jan 6, 2015·4 cites·19 claims
- 0771US11705492B2Method for fabricating semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jul 18, 2023·0 cites·10 claims
- 0864US11031477B2Method for fabricating semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 8, 2021·0 cites·12 claims
- 0962US8921238B2Method for processing high-k dielectric layerWang shao-wei·Filed 2011·Granted Dec 30, 2014·1 cites·14 claims
- 1058US7678588B2Method for constructing module for optical critical dimension (OCD) and measuring method of module for optical critical dimension using the moduleUNITED MICROELECTRONICS CORP·Filed 2008·Granted Mar 16, 2010·1 cites·37 claims
- 1157US10541309B2Semiconductor structure and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 21, 2020·0 cites·7 claims
- 1255US9343573B2Method of fabrication transistor with non-uniform stress layer with stress concentrated regionsUNITED MICROELECTRONICS CORP·Filed 2014·Granted May 17, 2016·0 cites·12 claims
- 1354US2015021776A1Polysilicon layerUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1452US9105582B2Spatial semiconductor structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted Aug 11, 2015·0 cites·8 claims
- 1543US8445363B2Method of fabricating an epitaxial layerLU TSUO-WEN·Filed 2011·Granted May 21, 2013·0 cites·17 claims
- 1642US2016020139A1Gap-filling dielectric layer method for manufacturing the same and applications thereofUNITED MICROELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 1741US2014213034A1Method for forming isolation structureUNITED MICROELECTRONICS CORP·Filed 2013·Application pending·0 cites
- 1837US2012292720A1Metal gate structure and manufacturing method thereofCHEN CHIH-CHUNG·Filed 2011·Application pending·0 cites
- 1935US2012309171A1Method for fabricating semiconductor deviceLU TSUO-WEN·Filed 2011·Application pending·0 cites
- 2021US2011189615A1Semiconductor processing method of manufacturing mos transistorHOU TSUNG-YU·Filed 2010·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Wen-Yi Teng files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →