Inventor · disambiguated record
Wen-Jer Tsai
Also filed as: TSAI WEN J · TSAI WEN JER
121 granted patents·14 pending applications·1,904 citations·filing 1999–2024
99Inventor score
Top patents by PatentIndex Score
135 records- 0199US6320786B1Method of controlling multi-state NROMMACRONIX INT CO LTD·Filed 2001·Granted Nov 20, 2001·431 cites·4 claims
- 0297US7158411B2Integrated code and data flash memoryMACRONIX INT CO LTD·Filed 2004·Granted Jan 2, 2007·116 cites·61 claims
- 0397US6690601B2Nonvolatile semiconductor memory cell with electron-trapping erase state and methods for operating the sameMACRONIX INT CO LTD·Filed 2002·Granted Feb 10, 2004·162 cites·35 claims
- 0495US6657894B2Apparatus and method for programming virtual ground nonvolatile memory cell array without disturbing adjacent cellsMACRONIX INT CO LTD·Filed 2002·Granted Dec 2, 2003·108 cites·9 claims
- 0594US7187590B2Method and system for self-convergent erase in charge trapping memory cellsMACRONIX INT CO LTD·Filed 2004·Granted Mar 6, 2007·95 cites·74 claims
- 0693US6444523B1Method for fabricating a memory device with a floating gateMACRONIX INT CO LTD·Filed 2001·Granted Sep 3, 2002·63 cites·19 claims
- 0792US11037632B1Multi-tier 3D memory and erase method thereofMACRONIX INT CO LTD·Filed 2020·Granted Jun 15, 2021·3 cites·8 claims
- 0892US6996011B2NAND-type non-volatile memory cell and method for operating sameMACRONIX INT CO LTD·Filed 2004·Granted Feb 7, 2006·62 cites·36 claims
- 0992US6721204B1Memory erase method and device with optimal data retention for nonvolatile memoryMACRONIX INT CO LTD·Filed 2003·Granted Apr 13, 2004·66 cites·40 claims
- 1092US6614694B1Erase scheme for non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Sep 2, 2003·67 cites·20 claims
- 1192US6215697B1Multi-level memory cell device and method for self-converged programmingMACRONIX INT CO LTD·Filed 1999·Granted Apr 10, 2001·118 cites·25 claims
- 1291US11062759B1Memory device and programming method thereofMACRONIX INT CO LTD·Filed 2020·Granted Jul 13, 2021·3 cites·18 claims
- 1391US10741262B2NAND flash operating techniques mitigating program disturbanceMACRONIX INT CO LTD·Filed 2018·Granted Aug 11, 2020·11 cites·17 claims
- 1491US9830992B1Operation method of non-volatile memory cell and applications thereofMACRONIX INT CO LTD·Filed 2016·Granted Nov 28, 2017·10 cites·20 claims
- 1591US7236394B2Transistor-free random access memoryMACRONIX INT CO LTD·Filed 2003·Granted Jun 26, 2007·61 cites·16 claims
- 1691US7133317B2Method and apparatus for programming nonvolatile memoryMACRONIX INT CO LTD·Filed 2005·Granted Nov 7, 2006·28 cites·42 claims
- 1791US6646924B1Non-volatile memory and operating method thereofMACRONIX INT CO LTD·Filed 2002·Granted Nov 11, 2003·64 cites·23 claims
- 1890US6829175B2Erasing method for non-volatile memoryMACRONIX INT CO LTD·Filed 2002·Granted Dec 7, 2004·47 cites·11 claims
- 1989US8531886B2Hot carrier programming in NAND flashHUANG JYUN-SIANG·Filed 2010·Granted Sep 10, 2013·12 cites·12 claims
- 2089US7269062B2Gated diode nonvolatile memory cellMACRONIX INT CO LTD·Filed 2005·Granted Sep 11, 2007·18 cites·21 claims
- 2188US7974127B2Operation methods for memory cell and array for reducing punch through leakageMACRONIX INT CO LTD·Filed 2008·Granted Jul 5, 2011·17 cites·28 claims
- 2288US7283389B2Gated diode nonvolatile memory cell arrayMACRONIX INT CO LTD·Filed 2005·Granted Oct 16, 2007·12 cites·21 claims
- 2386US8842479B2Low voltage programming in NAND flash with two stage source side biasHUANG JYUN-SIANG·Filed 2011·Granted Sep 23, 2014·12 cites·21 claims
- 2485US7514742B2Recessed shallow trench isolationMACRONIX INT CO LTD·Filed 2005·Granted Apr 7, 2009·11 cites·17 claims
- 2585US7397701B2Method and apparatus for operating a string of charge trapping memory cellsMACRONIX INT CO LTD·Filed 2006·Granted Jul 8, 2008·16 cites·36 claims
- 2684US8947939B2Low voltage programming in NAND flashTSAI PING-HUNG·Filed 2010·Granted Feb 3, 2015·12 cites·31 claims
- 2781US8755232B2Hot carrier programming in NAND flashMACRONIX INT CO LTD·Filed 2013·Granted Jun 17, 2014·6 cites·14 claims
- 2881US7272043B2Operation methods for a non-volatile memory cell in an arrayMACRONIX INT CO LTD·Filed 2004·Granted Sep 18, 2007·24 cites·37 claims
- 2977US7474558B2Gated diode nonvolatile memory cell arrayMACRONIX INT CO LTD·Filed 2007·Granted Jan 6, 2009·5 cites·16 claims
- 3076US9373629B1Memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2015·Granted Jun 21, 2016·3 cites·17 claims
- 3176US7419868B2Gated diode nonvolatile memory processMACRONIX INT CO LTD·Filed 2007·Granted Sep 2, 2008·7 cites·28 claims
- 3275US7804152B2Recessed shallow trench isolationMACRONIX INT CO LTD·Filed 2009·Granted Sep 28, 2010·5 cites·27 claims
- 3375US7321145B2Method and apparatus for operating nonvolatile memory cells with modified band structureMACRONIX INT CO LTD·Filed 2005·Granted Jan 22, 2008·6 cites·22 claims
- 3475US7132350B2Method for manufacturing a programmable eraseless memoryMACRONIX INT CO LTD·Filed 2003·Granted Nov 7, 2006·13 cites·31 claims
- 3575US7035147B2Overerase protection of memory cells for nonvolatile memoryMACRONIX INT CO LTD·Filed 2003·Granted Apr 25, 2006·22 cites·13 claims
- 3674US8976581B2Non-volatile memory capable of programming cells by hot carrier injection based on a threshold voltage of a control cellMACRONIX INT CO LTD·Filed 2013·Granted Mar 10, 2015·5 cites·18 claims
- 3773US7224619B2Method and apparatus for protection from over-erasing nonvolatile memory cellsMACRONIX INT CO LTD·Filed 2005·Granted May 29, 2007·7 cites·23 claims
- 3873US6649971B1Nitride read-only memory cell for improving second-bit effect and method for making thereofMACRONIX INT CO LTD·Filed 2002·Granted Nov 18, 2003·18 cites·12 claims
- 3972US8981459B2Structure and manufacturing method of a non-volatile memoryMACRONIX INT CO LTD·Filed 2013·Granted Mar 17, 2015·3 cites·24 claims
- 4072US8139416B2Operation methods for memory cell and array for reducing punch through leakageCHONG LIT-HO·Filed 2011·Granted Mar 20, 2012·4 cites·15 claims
- 4170US12308075B2Operation method for a memory deviceMACRONIX INT CO LTD·Filed 2023·Granted May 20, 2025·0 cites·8 claims
- 4270US7864594B2Memory apparatus and method thereof for operating memoryMACRONIX INT CO LTD·Filed 2008·Granted Jan 4, 2011·6 cites·22 claims
- 4369US8520439B2Memory array and method for programming memory arrayTSAI WEN-JER·Filed 2012·Granted Aug 27, 2013·5 cites·20 claims
- 4469US7795673B2Vertical non-volatile memoryMACRONIX INT CO LTD·Filed 2007·Granted Sep 14, 2010·4 cites·24 claims
- 4569US7057938B2Nonvolatile memory cell and operating methodMACRONIX INT CO LTD·Filed 2004·Granted Jun 6, 2006·14 cites·30 claims
- 4668US8665652B2Method for erasing memory arrayHUANG JYUN-SIANG·Filed 2011·Granted Mar 4, 2014·4 cites·19 claims
- 4768US7491599B2Gated diode nonvolatile memory processMACRONIX INT CO LTD·Filed 2006·Granted Feb 17, 2009·4 cites·23 claims
- 4867US12506065B2Semiconductor structure and method for manufacturing the sameMACRONIX INT CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·8 claims
- 4967US11641744B2Method for fabricating memory deviceMACRONIX INT CO LTD·Filed 2022·Granted May 2, 2023·0 cites·10 claims
- 5067USD440969SKeyboardSHIN JIUH CORP·Filed 2000·Granted Apr 24, 2001·14 cites·1 claims
Showing the top 50 of 135 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →