Inventor · disambiguated record
Wei-Hsiung Tseng
Also filed as: TSENG WEI-HSIUNG
13 granted patents·224 citations·filing 2012–2023
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD4TAIWAN SEMICONDUCTOR MFG4KELLY ANDREW JOSEPH2TSENG WEI-HSIUNG2TAIWAN SEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
13 records- 0197US9166010B2FinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Oct 20, 2015·49 cites·20 claims
- 0296US9029930B2FinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 12, 2015·28 cites·20 claims
- 0396US8703556B2Method of making a FinFET deviceKELLY ANDREW JOSEPH·Filed 2012·Granted Apr 22, 2014·106 cites·20 claims
- 0494US9287181B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2015·Granted Mar 15, 2016·16 cites·26 claims
- 0592US10396034B2Semiconductor devices and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 27, 2019·7 cites·15 claims
- 0689US8872284B2FinFET with metal gate stressorKELLY ANDREW JOSEPH·Filed 2012·Granted Oct 28, 2014·8 cites·20 claims
- 0787US9240484B2FinFET with metal gate stressorTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jan 19, 2016·4 cites·17 claims
- 0881US12132001B2Semiconductor devices and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·19 claims
- 0981US9553094B2Semiconductor device and method for fabricating the sameTSENG WEI-HSIUNG·Filed 2016·Granted Jan 24, 2017·3 cites·12 claims
- 1076US11335637B2Semiconductor devices and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 17, 2022·1 cites·16 claims
- 1175US9054213B2FinFET with metal gate stressorTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 9, 2015·2 cites·20 claims
- 1274US11804438B2Semiconductor devices and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·19 claims
- 1358USRE48942EFinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 22, 2022·0 cites·31 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →