Inventor · disambiguated record
Wen-De Wang
Also filed as: WANG WEN-DE
84 granted patents·11 pending applications·405 citations·filing 2004–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD49TAIWAN SEMICONDUCTOR MFG20CHUANG CHUN-CHIEH6TSAI SHUANG-JI5LIN JENG-SHYAN4
Top patents by PatentIndex Score
95 records- 0197US9142586B2Pad design for backside illuminated image sensorWANG WEN-DE·Filed 2010·Granted Sep 22, 2015·37 cites·20 claims
- 0295US8531565B2Front side implanted guard ring structure for backside illuminated image sensorWANG WEN-DE·Filed 2010·Granted Sep 10, 2013·16 cites·20 claims
- 0394US9123615B2Vertically integrated image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 1, 2015·11 cites·20 claims
- 0494US9035445B2Seal ring structure with a metal padTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 19, 2015·14 cites·20 claims
- 0593US9305966B2Backside structure and method for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Apr 5, 2016·5 cites·20 claims
- 0693US8709854B2Backside structure and methods for BSI image sensorsCHUANG CHUN-CHIEH·Filed 2012·Granted Apr 29, 2014·14 cites·11 claims
- 0793US8461021B2Multiple seal ring structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jun 11, 2013·17 cites·14 claims
- 0893US8435824B2Backside illumination sensor having a bonding pad structure and method of making the sameTSAI SHUANG-JI·Filed 2011·Granted May 7, 2013·18 cites·20 claims
- 0993US7935994B2Light shield for CMOS imagerTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 3, 2011·17 cites·20 claims
- 1092US12154939B2High capacitance MIM device with self aligned spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·1 cites·20 claims
- 1192US9806119B23DIC seal ring structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 31, 2017·9 cites·20 claims
- 1292US7078779B2Enhanced color image sensor device and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 18, 2006·59 cites·54 claims
- 1391US8981510B2Ridge structure for back side illuminated image sensorCHUANG CHUN-CHIEH·Filed 2010·Granted Mar 17, 2015·7 cites·20 claims
- 1490US9165970B2Back side illuminated image sensor having isolated bonding padsTSAI SHUANG-JI·Filed 2011·Granted Oct 20, 2015·8 cites·17 claims
- 1590US8383440B2Light shield for CMOS imagerTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·5 cites·20 claims
- 1689US10727218B2Seal ring structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·5 cites·20 claims
- 1789US10566378B2Back side illuminated image sensor with reduced sidewall-induced leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·4 cites·20 claims
- 1889US9570497B2Back side illuminated image sensor having isolated bonding padsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·4 cites·19 claims
- 1988US8810700B2Front side implanted guard ring structure for backsideTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 19, 2014·4 cites·20 claims
- 2088US8604405B2Backside illuminated image sensor device with refractive index dependent layer thicknesses and method of forming the sameLIU HAN-CHI·Filed 2009·Granted Dec 10, 2013·13 cites·20 claims
- 2188US8405182B2Back side illuminated image sensor with improved stress immunityCHOU KENG-YU·Filed 2011·Granted Mar 26, 2013·12 cites·20 claims
- 2288US2025311462A13dic seal ring structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2387US9013022B2Pad structure including glue layer and non-low-k dielectric layer in BSI image sensor chipsLIN JENG-SHYAN·Filed 2011·Granted Apr 21, 2015·7 cites·21 claims
- 2487US8969991B2Backside structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·8 cites·20 claims
- 2587US8283754B2Seal ring structure with metal padLIN JENG-SHYAN·Filed 2010·Granted Oct 9, 2012·7 cites·15 claims
- 2686US11476295B2Back side illuminated image sensor with reduced sidewall-induced leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 18, 2022·2 cites·20 claims
- 2786US10290671B2Image sensor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·3 cites·20 claims
- 2886US9184207B2Pad structures formed in double openings in dielectric layersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Nov 10, 2015·2 cites·20 claims
- 2986US8338917B2Multiple seal ring structureYAUNG DUN-NIAN·Filed 2010·Granted Dec 25, 2012·10 cites·14 claims
- 3086US8227288B2Image sensor and method of fabricating sameWANG WEN-DE·Filed 2009·Granted Jul 24, 2012·7 cites·18 claims
- 3185US9455288B2Image sensor structure to reduce cross-talk and improve quantum efficiencyTSAI SHUANG-JI·Filed 2012·Granted Sep 27, 2016·4 cites·19 claims
- 3285US8164124B2Photodiode with multi-epi films for image sensorLIU JEN-CHENG·Filed 2007·Granted Apr 24, 2012·9 cites·20 claims
- 3385US7968424B2Method of implantationTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jun 28, 2011·11 cites·20 claims
- 3485US2024421177A1Back side illuminated image sensor with reduced sidewall-induced leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3582US9837464B2Backside structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 5, 2017·2 cites·20 claims
- 3682US8569807B2Backside illuminated image sensor having capacitor on pixel regionCHUANG CHUN-CHIEH·Filed 2010·Granted Oct 29, 2013·7 cites·20 claims
- 3782US2025366242A1Isolation structures in image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3881US10510792B23DIC seal ring structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·2 cites·20 claims
- 3980US12396283B23DIC seal ring structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·18 claims
- 4080US8564085B2CMOS image sensor structureKAO MIN-FENG·Filed 2011·Granted Oct 22, 2013·2 cites·18 claims
- 4180US7803647B2Optical transmission improvement on multi-dielectric structure in advance CMOS imagerTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 28, 2010·5 cites·26 claims
- 4280US2025344545A1Back-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4379US9773828B2Image sensor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·2 cites·20 claims
- 4479US9401380B2Backside structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 26, 2016·1 cites·20 claims
- 4579US8502389B2CMOS image sensor and method for forming the sameHO CHENG-YING·Filed 2011·Granted Aug 6, 2013·7 cites·20 claims
- 4678US9576999B2Backside structure and methods for BSI image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 21, 2017·2 cites·20 claims
- 4778US8710612B2Semiconductor device having a bonding pad and shield structure of different thicknessTSAI SHUANG-JI·Filed 2011·Granted Apr 29, 2014·4 cites·12 claims
- 4877US8987855B2Pad structures formed in double openings in dielectric layersLIN JENG-SHYAN·Filed 2011·Granted Mar 24, 2015·1 cites·20 claims
- 4977US2024387613A1Capacitor device with self aligned spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5076US9356058B2Backside structure for BSI image sensorCHUANG CHUN-CHIEH·Filed 2012·Granted May 31, 2016·1 cites·20 claims
Showing the top 50 of 95 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →