Inventor · disambiguated record
Willem G. Einthoven
Also filed as: EINTHOVEN WILLEM · EINTHOVEN WILLEM G · EINTHOVEN WILLEM GERARD
23 granted patents·430 citations·filing 1974–2003
96Inventor score
Top patents by PatentIndex Score
23 records- 0188US6489660B1Low-voltage punch-through bi-directional transient-voltage suppression devicesGEN SEMICONDUCTOR INC·Filed 2001·Granted Dec 3, 2002·59 cites·9 claims
- 0286US4929987AMethod for setting the threshold voltage of a power mosfetGEN INSTRUMENT CORP·Filed 1989·Granted May 29, 1990·55 cites·2 claims
- 0386US4742377ASchottky barrier device with doped composite guard ringGEN INSTRUMENT CORP·Filed 1986·Granted May 3, 1988·54 cites·7 claims
- 0480US4638551ASchottky barrier device and method of manufactureGEN INSTRUMENT CORP·Filed 1985·Granted Jan 27, 1987·41 cites·12 claims
- 0574US5882986ASemiconductor chips having a mesa structure provided by sawingGEN SEMICONDUCTOR INC·Filed 1998·Granted Mar 16, 1999·48 cites·9 claims
- 0669US4859621AMethod for setting the threshold voltage of a vertical power MOSFETGEN INSTRUMENT CORP·Filed 1988·Granted Aug 22, 1989·27 cites·16 claims
- 0769US4035757ASemiconductor device resistors having selected temperature coefficientsRCA CORP·Filed 1975·Granted Jul 12, 1977·17 cites·7 claims
- 0865US4740477AMethod for fabricating a rectifying P-N junction having improved breakdown voltage characteristicsGEN INSTRUMENT CORP·Filed 1985·Granted Apr 26, 1988·20 cites·7 claims
- 0961US6600204B2Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the sameGEN SEMICONDUCTOR INC·Filed 2001·Granted Jul 29, 2003·8 cites·8 claims
- 1052US6858510B2Low-voltage punch-through bi-directional transient-voltage suppression devices having surface breakdown protection and methods of making the sameGEN SEMICONDUCTOR INC·Filed 2003·Granted Feb 22, 2005·4 cites·9 claims
- 1151US6602769B2Low-voltage punch-through bi-directional transient-voltage suppression devices and methods of making the sameGEN SEMICONDUCTOR INC·Filed 2002·Granted Aug 5, 2003·5 cites·9 claims
- 1251US4980315AMethod of making a passivated P-N junction in mesa semiconductor structureGEN INSTRUMENT CORP·Filed 1989·Granted Dec 25, 1990·20 cites·20 claims
- 1349US5010023AMethod for fabricating a rectifying semiconductor junction having improved breakdown voltage characteristicsGEN INSTRUMENT CORP·Filed 1989·Granted Apr 23, 1991·10 cites·12 claims
- 1449US4891685ARectifying P-N junction having improved breakdown voltage characteristics and method for fabricating sameGEN INSTRUMENT CORP·Filed 1988·Granted Jan 2, 1990·10 cites·10 claims
- 1545US5371647ASurge protection circuit module and method for assembling sameGEN INSTRUMENT CORP·Filed 1992·Granted Dec 6, 1994·15 cites·28 claims
- 1644US5640043AHigh voltage silicon diode with optimum placement of silicon-germanium layersGEN INSTRUMENT CORP·Filed 1995·Granted Jun 17, 1997·10 cites·15 claims
- 1743US5773874ASemiconductor device having a mesa structure for surface voltage breakdownGEN INSTRUMENT CORP·Filed 1997·Granted Jun 30, 1998·10 cites·6 claims
- 1840US5166769APassitvated mesa semiconductor and method for making sameGEN INSTRUMENT CORP·Filed 1992·Granted Nov 24, 1992·12 cites·8 claims
- 1932US3988759AThermally balanced PN junctionRCA CORP·Filed 1974·Granted Oct 26, 1976·2 cites·5 claims
- 2030US3999217ASemiconductor device having parallel path for current flowRCA CORP·Filed 1975·Granted Dec 21, 1976·1 cites·5 claims
- 2127US5635414ALow cost method of fabricating shallow junction, Schottky semiconductor devicesFiled 1995·Granted Jun 3, 1997·0 cites·19 claims
- 2227US3997910ASemiconductor device with solder conductive pathsRCA CORP·Filed 1975·Granted Dec 14, 1976·1 cites·11 claims
- 2322US4035828ASemiconductor integrated circuit deviceRCA CORP·Filed 1976·Granted Jul 12, 1977·1 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →