Inventor · disambiguated record
Wilfried Haensch
Also filed as: HAENSCH WILFRIED · HAENSCH WILFRIED E · HAENSCH WILFRIED E A
29 granted patents·6 pending applications·138 citations·filing 1993–2019
95Inventor score
Top patents by PatentIndex Score
35 records- 0192US9059212B2Back-end transistors with highly doped low-temperature contactsIBM·Filed 2012·Granted Jun 16, 2015·9 cites·9 claims
- 0292US7408800B1Apparatus and method for improved SRAM device performance through double gate topologyIBM·Filed 2007·Granted Aug 5, 2008·25 cites·3 claims
- 0391US9362177B1Nanowire semiconductor deviceIBM·Filed 2015·Granted Jun 7, 2016·6 cites·20 claims
- 0484US9660806B2Carbon nanotube array for cryptographic key generation and protectionIBM·Filed 2014·Granted May 23, 2017·6 cites·15 claims
- 0582US9203041B2Carbon nanotube transistor having extended contactsIBM·Filed 2014·Granted Dec 1, 2015·4 cites·17 claims
- 0682US7396776B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2006·Granted Jul 8, 2008·7 cites·1 claims
- 0781US8288826B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)CHOU ANTHONY I·Filed 2011·Granted Oct 16, 2012·4 cites·18 claims
- 0878US9064739B2Techniques for quantifying fin-thickness variation in FINFET technologyIBM·Filed 2013·Granted Jun 23, 2015·3 cites·5 claims
- 0978US7729159B2Apparatus for improved SRAM device performance through double gate topologyIBM·Filed 2008·Granted Jun 1, 2010·9 cites·17 claims
- 1076US8445371B2Self-aligned contactsGUO DECHAO·Filed 2010·Granted May 21, 2013·3 cites·14 claims
- 1174US5344793AFormation of silicided junctions in deep sub-micron MOSFETs by defect enhanced CoSi2 formationSIEMENS AG·Filed 1993·Granted Sep 6, 1994·33 cites·8 claims
- 1273US8940558B2Techniques for quantifying fin-thickness variation in FINFET technologyIBM·Filed 2013·Granted Jan 27, 2015·2 cites·15 claims
- 1373US8546920B2Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2012·Granted Oct 1, 2013·2 cites·17 claims
- 1472US7250656B2Hybrid-orientation technology buried n-well designIBM·Filed 2005·Granted Jul 31, 2007·4 cites·9 claims
- 1564US5780929AFormation of silicided junctions in deep submicron MOSFETS by defect enhanced CoSi2 formationSIEMENS AG·Filed 1996·Granted Jul 14, 1998·21 cites·20 claims
- 1654US10090197B2Aggressive tip-to-tip scaling using subtractive integrationIBM·Filed 2017·Granted Oct 2, 2018·0 cites·18 claims
- 1754US8969187B2Self-aligned contactsIBM·Filed 2013·Granted Mar 3, 2015·0 cites·19 claims
- 1853US8053373B2Semiconductor-on-insulator(SOI) structures including gradient nitrided buried oxide (BOX)IBM·Filed 2008·Granted Nov 8, 2011·0 cites·17 claims
- 1952US9059291B2Semiconductor-on-insulator device including stand-alone well implant to provide junction buttingIBM·Filed 2013·Granted Jun 16, 2015·0 cites·8 claims
- 2052US8901626B2Self-aligned contacts for field effect transistor devicesGUO DECHAO·Filed 2012·Granted Dec 2, 2014·0 cites·16 claims
- 2151US9793160B1Aggressive tip-to-tip scaling using subtractive integratonIBM·Filed 2016·Granted Oct 17, 2017·0 cites·19 claims
- 2251US9105725B2Semiconductor-on-insulator device including stand-alone well implant to provide junction buttingIBM·Filed 2014·Granted Aug 11, 2015·0 cites·10 claims
- 2350US11430748B2Inspection and identification to enable secure chip processingIBM·Filed 2019·Granted Aug 30, 2022·0 cites·20 claims
- 2450US9608099B1Nanowire semiconductor deviceIBM·Filed 2015·Granted Mar 28, 2017·0 cites·3 claims
- 2550US9312358B2Partially-blocked well implant to improve diode ideality with SiGe anodeGUO DECHAO·Filed 2012·Granted Apr 12, 2016·0 cites·17 claims
- 2650US9252234B2Partially-blocked well implant to improve diode ideality with SiGe anodeGUO DECHAO·Filed 2012·Granted Feb 2, 2016·0 cites·17 claims
- 2750US7479410B2Hybrid-orientation technology buried n-well designIBM·Filed 2007·Granted Jan 20, 2009·0 cites·11 claims
- 2849US9787473B2Carbon nanotube array for cryptographic key generation and protectionIBM·Filed 2015·Granted Oct 10, 2017·0 cites·8 claims
- 2949US2012299125A1Self-aligned contactsGUO DECHAO·Filed 2012·Application pending·0 cites
- 3048US8367508B2Self-aligned contacts for field effect transistor devicesIBM·Filed 2010·Granted Feb 5, 2013·0 cites·13 claims
- 3147US2013198695A1Multi-Gate Field Effect Transistor with A Tapered Gate ProfileIBM·Filed 2012·Application pending·0 cites
- 3246US2013193513A1Multi-Gate Field Effect Transistor with a Tapered Gate ProfileBRYANT ANDRES·Filed 2012·Application pending·0 cites
- 3342US2009072313A1Hardened transistors in soi devicesIBM·Filed 2007·Application pending·0 cites
- 3436US2008273366A1Design structure for improved sram device performance through double gate topologyIBM·Filed 2007·Application pending·0 cites
- 3534US2012038429A1Oscillator Circuits Including Graphene FETHAENSCH WILFRIED E·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →