Inventor · disambiguated record
William Weilun Hong
Also filed as: HONG WILLIAM · HONG WILLIAM WEILUN
29 granted patents·5 pending applications·41 citations·filing 2003–2024
94Inventor score
Top patents by PatentIndex Score
34 records- 0193US11854821B2Hard mask removal methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0291US10971370B2Hard mask removal methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·4 cites·20 claims
- 0390US10510552B2Hard mask removal methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·4 cites·20 claims
- 0486US9960050B2Hard mask removal methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 1, 2018·5 cites·20 claims
- 0584US12424449B2CMP system and method of useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0683US11069533B2CMP system and method of useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·2 cites·20 claims
- 0783US2024387187A1Methods for reducing scratch defects in chemical mechanical planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0882US9871115B1Doped poly-silicon for polyCMP planarity improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·3 cites·20 claims
- 0979US12229487B2Hotspot avoidance method of manufacturing integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·20 claims
- 1079US2024378362A1Hotspot avoidance method of manufacturing integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1179US2023377898A1Methods for reducing scratch defects in chemical mechanical planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1278US12224179B2Metal heterojunction structure with capping metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1375US6946397B2Chemical mechanical polishing process with reduced defects in a copper processTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 20, 2005·18 cites·24 claims
- 1473US11675953B2Hotspot avoidance method of manufacturing integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 1572US11984323B2CMP system and method of useTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 1672US10522365B2Methods for reducing scratch defects in chemical mechanical planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 31, 2019·1 cites·20 claims
- 1771US11637021B2Metal heterojunction structure with capping metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
- 1867US11443095B2Hotspot avoidance method for manufacturing integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·0 cites·20 claims
- 1967US2025289093A1System and method for real time inline mixing cmp slurryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2065US10541139B2Planarization control in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 21, 2020·1 cites·20 claims
- 2164US11094555B2CMP slurry and CMP methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 2264US9721831B2Method and apparatus for semiconductor planarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 1, 2017·1 cites·20 claims
- 2361US2020126803A1Methods for Reducing Scratch Defects in Chemical Mechanical PlanarizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Application pending·0 cites
- 2460US11037799B2Metal heterojunction structure with capping metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 2558US11718812B2Post-CMP cleaning composition for germanium-containing substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2654US10692732B2CMP slurry and CMP methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·0 cites·20 claims
- 2753US10068988B2Doped poly-silicon for PolyCMP planarity improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 4, 2018·0 cites·20 claims
- 2849US9278423B2CMP slurry particle breakupTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 8, 2016·0 cites·20 claims
- 2947US11189497B2Chemical mechanical planarization using nano-abrasive slurryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·0 cites·20 claims
- 3045US11133247B2Vias with metal caps for underlying conductive linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 3144US9941109B2Surface treatment in a chemical mechanical processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·0 cites·20 claims
- 3243US9711374B2Mechanisms for forming oxide layer over exposed polysilicon during a chemical mechanical polishing (CMP) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 18, 2017·0 cites·20 claims
- 3343US9595450B2Composite structure for gate level inter-layer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 14, 2017·0 cites·19 claims
- 3442US9922837B2Asymmetric application of pressure to a wafer during a CMP processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →