Inventor · disambiguated record
William Hsu
Also filed as: HSU WILLIAM · HSU WILLIAM W
48 granted patents·15 pending applications·160 citations·filing 1976–2025
97Inventor score
Top patents by PatentIndex Score
63 records- 0198US11855223B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2021·Granted Dec 26, 2023·6 cites·20 claims
- 0295US12272737B2Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contactINTEL CORP·Filed 2023·Granted Apr 8, 2025·2 cites·21 claims
- 0395US11929396B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0494US11233152B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2018·Granted Jan 25, 2022·6 cites·23 claims
- 0593US11342411B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2018·Granted May 24, 2022·7 cites·18 claims
- 0690US11908856B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Feb 20, 2024·5 cites·22 claims
- 0790US11799009B2Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contactINTEL CORP·Filed 2019·Granted Oct 24, 2023·4 cites·28 claims
- 0888US12382706B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2024·Granted Aug 5, 2025·0 cites·23 claims
- 0988US11824116B2Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contactINTEL CORP·Filed 2019·Granted Nov 21, 2023·4 cites·20 claims
- 1088US2025126832A1Self-aligned gate endcap (sage) architectures with gate-all-around devicesINTEL CORP·Filed 2024·Application pending·0 cites
- 1186US12224350B2Self-aligned gate endcap (SAGE) architectures with gate-all-around devicesINTEL CORP·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1286US11404578B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2018·Granted Aug 2, 2022·3 cites·18 claims
- 1385US11302790B2Fin shaping using templates and integrated circuit structures resulting therefromINTEL CORP·Filed 2018·Granted Apr 12, 2022·3 cites·22 claims
- 1483US12328905B2Cavity spacer for nanowire transistorsINTEL CORP·Filed 2024·Granted Jun 10, 2025·0 cites·20 claims
- 1582US2025280567A1Cavity spacer for nanowire transistorsINTEL CORP·Filed 2025·Application pending·0 cites
- 1681US12166031B2Substrate-less electrostatic discharge (ESD) integrated circuit structuresINTEL CORP·Filed 2020·Granted Dec 10, 2024·1 cites·20 claims
- 1780US12453115B2Nanowire transistor structure and method of shapingINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·17 claims
- 1880US12349394B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2024·Granted Jul 1, 2025·0 cites·21 claims
- 1978US11869891B2Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate processINTEL CORP·Filed 2018·Granted Jan 9, 2024·2 cites·6 claims
- 2077US12288789B2Gate-all-around integrated circuit structures having devices with source/drain-to-substrate electrical contactINTEL CORP·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 2176US12402349B2Gate-all-around integrated circuit structures having devices with channel-to-substrate electrical contactINTEL CORP·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2276US12302632B2Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate processINTEL CORP·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 2376US11894368B2Gate-all-around integrated circuit structures fabricated using alternate etch selective materialINTEL CORP·Filed 2019·Granted Feb 6, 2024·1 cites·16 claims
- 2476US6352217B1Missile fin locking and unlocking mechanism including a mechanical force amplifierHR TEXTRON INC·Filed 2000·Granted Mar 5, 2002·29 cites·7 claims
- 2575US12369392B2Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gatesINTEL CORP·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2673US11901458B2Dielectric isolation layer between a nanowire transistor and a substrateINTEL CORP·Filed 2022·Granted Feb 13, 2024·0 cites·22 claims
- 2773US11705518B2Isolation schemes for gate-all-around transistor devicesINTEL CORP·Filed 2022·Granted Jul 18, 2023·0 cites·20 claims
- 2873US2025234646A1Gate-all-around integrated circuit structures having insulator substrateINTEL CORP·Filed 2025·Application pending·0 cites
- 2973US2024120335A1Gate-all-around integrated circuit structures fabricated using alternate etch selective materialINTEL CORP·Filed 2023·Application pending·0 cites
- 3072US12014959B2Integrated nanowire and nanoribbon patterning in transistor manufactureINTEL CORP·Filed 2021·Granted Jun 18, 2024·0 cites·20 claims
- 3171US11152461B2Semiconductor layer between source/drain regions and gate spacersINTEL CORP·Filed 2018·Granted Oct 19, 2021·1 cites·20 claims
- 3270US11749733B2FIN shaping using templates and integrated circuit structures resulting therefromINTEL CORP·Filed 2022·Granted Sep 5, 2023·0 cites·22 claims
- 3370US11588052B2Sub-Fin isolation schemes for gate-all-around transistor devicesINTEL CORP·Filed 2018·Granted Feb 21, 2023·1 cites·20 claims
- 3470US2024055497A1Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contactINTEL CORP·Filed 2023·Application pending·0 cites
- 3567US6250584B1Missile fin locking mechanismHR TEXTRON INC·Filed 1999·Granted Jun 26, 2001·31 cites·10 claims
- 3667US4518004AMultifunction valveHR TEXTRON INC·Filed 1983·Granted May 21, 1985·22 cites·5 claims
- 3767US2023163215A1Gate-all-around integrated circuit structures having fin stack isolationINTEL CORP·Filed 2023·Application pending·0 cites
- 3866US12507464B2Gate aligned fin cut for advanced integrated circuit structure fabricationINTEL CORP·Filed 2021·Granted Dec 23, 2025·0 cites·10 claims
- 3966US2024363628A1Fabrication of gate-all-around integrated circuit structures having adjacent island structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 4063US11594637B2Gate-all-around integrated circuit structures having fin stack isolationINTEL CORP·Filed 2020·Granted Feb 28, 2023·0 cites·13 claims
- 4162US12294006B2Gate-all-around integrated circuit structures having insulator substrateINTEL CORP·Filed 2019·Granted May 6, 2025·0 cites·20 claims
- 4261US11990472B2Fabrication of gate-all-around integrated circuit structures having pre-spacer deposition cut gatesINTEL CORP·Filed 2020·Granted May 21, 2024·0 cites·11 claims
- 4360US11837641B2Gate-all-around integrated circuit structures having adjacent deep via substrate contacts for sub-fin electrical contactINTEL CORP·Filed 2019·Granted Dec 5, 2023·0 cites·18 claims
- 4458US12328920B2Nanoribbon sub-fin isolation by backside Si substrate removal etch selective to source and drain epitaxyINTEL CORP·Filed 2021·Granted Jun 10, 2025·0 cites·9 claims
- 4558US7195197B2Techniques for controlling a fin with unlimited adjustment and no backlashHR TEXTRON INC·Filed 2005·Granted Mar 27, 2007·7 cites·20 claims
- 4658US2025220870A1Integrated circuit structure with varied epitaxial source or drain structures and device typesINTEL CORP·Filed 2023·Application pending·0 cites
- 4757US11869973B2Nanowire transistor structure and method of shapingINTEL CORP·Filed 2018·Granted Jan 9, 2024·0 cites·15 claims
- 4856US12068314B2Fabrication of gate-all-around integrated circuit structures having adjacent island structuresINTEL CORP·Filed 2020·Granted Aug 20, 2024·0 cites·28 claims
- 4956US11335807B2Isolation schemes for gate-all-around transistor devicesINTEL CORP·Filed 2018·Granted May 17, 2022·0 cites·20 claims
- 5055US11164790B2Integrated nanowire and nanoribbon patterning in transistor manufactureINTEL CORP·Filed 2017·Granted Nov 2, 2021·0 cites·21 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →