Inventor · disambiguated record
Wolfgang Buchholtz
Also filed as: BUCHHOLTZ WOLFGANG
10 granted patents·5 pending applications·161 citations·filing 1995–2016
89Inventor score
Files withADVANCED MICRO DEVICES INC7GLOBALFOUNDRIES INC3BOSCH GMBH ROBERT1BUCHHOLTZ WOLFGANG1CHUMAKOV DMYTRO1
Top patents by PatentIndex Score
15 records- 0194US7741167B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2007·Granted Jun 22, 2010·26 cites·10 claims
- 0292US7332384B2Technique for forming a substrate having crystalline semiconductor regions of different characteristicsADVANCED MICRO DEVICES INC·Filed 2005·Granted Feb 19, 2008·32 cites·17 claims
- 0389US5627317AAcceleration sensorBOSCH GMBH ROBERT·Filed 1995·Granted May 6, 1997·83 cites·8 claims
- 0479US7893503B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2010·Granted Feb 22, 2011·4 cites·9 claims
- 0576US8039335B2Semiconductor device comprising NMOS and PMOS transistors with embedded Si/Ge material for creating tensile and compressive strainADVANCED MICRO DEVICES INC·Filed 2011·Granted Oct 18, 2011·3 cites·3 claims
- 0671US7316975B2Method of forming sidewall spacersADVANCED MICRO DEVICES INC·Filed 2005·Granted Jan 8, 2008·5 cites·18 claims
- 0765US7375031B2Technique for forming interconnect structures with reduced electro and stress migration and/or resistivityADVANCED MICRO DEVICES INC·Filed 2005·Granted May 20, 2008·5 cites·32 claims
- 0853US2015333057A1Meander resistorGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 0952US9006906B2DRAM cell based on conductive nanochannel plateGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 14, 2015·0 cites·20 claims
- 1048US2016141393A1Meander resistorGLOBALFOUNDRIES INC·Filed 2016·Application pending·0 cites
- 1147US7494872B2Field effect transistor having a doped gate electrode with reduced gate depletion and method of forming the transistorADVANCED MICRO DEVICES INC·Filed 2004·Granted Feb 24, 2009·3 cites·27 claims
- 1246US8785271B2DRAM cell based on conductive nanochannel plateCHUMAKOV DMYTRO·Filed 2011·Granted Jul 22, 2014·0 cites·14 claims
- 1336US2010243903A1Method and system for material characterization in semiconductor production processes based on ftir with variable angle of incidenceFAHR TORSTEN·Filed 2010·Application pending·0 cites
- 1431US2006094193A1Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the sameHORSTMANN MANFRED·Filed 2005·Application pending·0 cites
- 1530US2006223311A1Technique for forming interconnect structures with reduced electro and stress migration and/or resistivityBUCHHOLTZ WOLFGANG·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →