Inventor · disambiguated record
Wonill Ha
Also filed as: HA WONILL
23 granted patents·2 pending applications·485 citations·filing 2002–2023
96Inventor score
Files withFLEXTRONICS INT USA INC8HRL LAB LLC7COLDWATT INC4BRAR BERINDER P S2UNIV LELAND STANFORD JUNIOR2
Top patents by PatentIndex Score
25 records- 0197US7339208B2Semiconductor device having multiple lateral channels and method of forming the sameCOLDWATT INC·Filed 2005·Granted Mar 4, 2008·76 cites·20 claims
- 0297US7285807B2Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the sameCOLDWATT INC·Filed 2005·Granted Oct 23, 2007·55 cites·20 claims
- 0396US7663183B2Vertical field-effect transistor and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Feb 16, 2010·55 cites·30 claims
- 0496US7655963B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Feb 2, 2010·36 cites·20 claims
- 0595US7462891B2Semiconductor device having an interconnect with sloped walls and method of forming the sameCOLDWATT INC·Filed 2005·Granted Dec 9, 2008·48 cites·20 claims
- 0695US7439557B2Semiconductor device having a lateral channel and contacts on opposing surfaces thereofCOLDWATT INC·Filed 2005·Granted Oct 21, 2008·32 cites·44 claims
- 0794US9087854B1Thermal management for heterogeneously integrated technologyHRL LAB LLC·Filed 2014·Granted Jul 21, 2015·17 cites·26 claims
- 0893US7541640B2Vertical field-effect transistor and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Jun 2, 2009·27 cites·30 claims
- 0992US7504673B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Mar 17, 2009·16 cites·20 claims
- 1091US9515068B1Monolithic integration of GaN and InP componentsHRL LAB LLC·Filed 2013·Granted Dec 6, 2016·12 cites·10 claims
- 1187US9530708B1Flexible electronic circuit and method for manufacturing sameHRL LAB LLC·Filed 2013·Granted Dec 27, 2016·8 cites·11 claims
- 1287US7838905B2Semiconductor device having multiple lateral channels and method of forming the sameFLEXTRONICS INT USA INC·Filed 2008·Granted Nov 23, 2010·11 cites·40 claims
- 1387US7675090B2Semiconductor device having a contact on a buffer layer thereof and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Mar 9, 2010·11 cites·20 claims
- 1487US7564074B2Semiconductor device including a lateral field-effect transistor and Schottky diodeFLEXTRONICS INT USA INC·Filed 2007·Granted Jul 21, 2009·14 cites·20 claims
- 1586US7642568B2Semiconductor device having substrate-driven field-effect transistor and Schottky diode and method of forming the sameFLEXTRONICS INT USA INC·Filed 2007·Granted Jan 5, 2010·9 cites·30 claims
- 1685US6798809B1GaInNAsSb quantum well semiconductor devicesUNIV LELAND STANFORD JUNIOR·Filed 2002·Granted Sep 28, 2004·36 cites·55 claims
- 1782US8415737B2Semiconductor device with a pillar region and method of forming the sameBRAR BERINDER P S·Filed 2007·Granted Apr 9, 2013·13 cites·30 claims
- 1873US12255047B1Embedded high-z marker material and process for alignment of multilevel ebeam lithographyHRL LAB LLC·Filed 2023·Granted Mar 18, 2025·0 cites·4 claims
- 1973US7645626B2Multiple GaInNAs quantum wells for high power applicationsUNIV LELAND STANFORD JUNIOR·Filed 2004·Granted Jan 12, 2010·9 cites·18 claims
- 2060US11823864B1Embedded high-Z marker material and process for alignment of multilevel ebeam lithographyHRL LAB LLC·Filed 2020·Granted Nov 21, 2023·0 cites·14 claims
- 2149US9691761B1Monolithic integration of GaN and InP componentsHRL LAB LLC·Filed 2016·Granted Jun 27, 2017·0 cites·11 claims
- 2248US10056340B1Flexible electronic circuit and method for manufacturing sameHRL LAB LLC·Filed 2016·Granted Aug 21, 2018·0 cites·9 claims
- 2347US12040366B2Fabricating sub-micron contacts to buried well devicesBOEING CO·Filed 2021·Granted Jul 16, 2024·0 cites·8 claims
- 2443US2007145417A1High voltage semiconductor device having a lateral channel and enhanced gate-to-drain separationBRAR BERINDER P S·Filed 2007·Application pending·0 cites
- 2535US2011089531A1Interposer Based Monolithic Microwave Integrate Circuit (iMMIC)TELEDYNE SCIENT & IMAGING LLC·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →