Inventor · disambiguated record
Wonyong Koh
Also filed as: KOH WONYONG
14 granted patents·7 pending applications·169 citations·filing 1996–2023
90Inventor score
Files withUP CHEMICAL CO LTD12ASM GENITECH KOREA LTD3ASM JAPAN3HONG KYUNG IL1KOREA RES INST CHEM TECH1
Top patents by PatentIndex Score
21 records- 0196US7476618B2Selective formation of metal layers in an integrated circuitASM JAPAN·Filed 2005·Granted Jan 13, 2009·126 cites·45 claims
- 0292US9957614B2Ruthenium compound, preparation method therefor, precursor composition for film deposition containing same, and method for depositing film by using sameUP CHEMICAL CO LTD·Filed 2015·Granted May 1, 2018·5 cites·12 claims
- 0390US7976898B2Atomic layer deposition apparatusASM GENITECH KOREA LTD·Filed 2007·Granted Jul 12, 2011·16 cites·9 claims
- 0489US10131680B1Group 4 metal element-containing alkoxy compound, preparing method thereof, precursor composition including the same for film deposition, and method of depositing film using the sameUP CHEMICAL CO LTD·Filed 2017·Granted Nov 20, 2018·3 cites·7 claims
- 0582US8215264B2Atomic layer deposition apparatusHONG KYUNG IL·Filed 2011·Granted Jul 10, 2012·7 cites·11 claims
- 0681US11912728B2Aluminum compounds and methods of forming aluminum- containing film using the sameUP CHEMICAL CO LTD·Filed 2021·Granted Feb 27, 2024·1 cites·11 claims
- 0781US11485749B2Group 4 metal element-containing compounds, method of preparing the same, precursor compositions including the same for forming a film, and method of forming a film using the sameUP CHEMICAL CO LTD·Filed 2020·Granted Nov 1, 2022·1 cites·8 claims
- 0880US9255324B2Aluminum precursor compositionUP CHEMICAL CO LTD·Filed 2013·Granted Feb 9, 2016·2 cites·11 claims
- 0979US10005795B1Group 4 metal element-containing compound, method of preparing the same, precursor composition including the same for depositing film, and method of depositing film using the sameUP CHEMICAL CO LTD·Filed 2017·Granted Jun 26, 2018·1 cites·10 claims
- 1072US12319705B2Ruthenium precursor composition, preparation method therefor, and formation method for ruthenium-containing film using sameUP CHEMICAL CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·22 claims
- 1165US9431144B2Indium-containing oxide film and preparing method thereofUP CHEMICAL CO LTD·Filed 2014·Granted Aug 30, 2016·0 cites·10 claims
- 1259US2023383405A1Hafnium precursor compound, composition for forming hafnium-containing film, comprising same, and method for forming hafnium-containing filmUP CHEMICAL CO LTD·Filed 2023·Application pending·0 cites
- 1357US10763001B2Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the compositionUP CHEMICAL CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·10 claims
- 1453US10014089B2Liquid precursor compositions, preparation methods thereof, and methods for forming layer using the compositionUP CHEMICAL CO LTD·Filed 2016·Granted Jul 3, 2018·0 cites·13 claims
- 1550US2007215036A1Method and apparatus of time and space co-divided atomic layer depositionPARK HYUNG-SANG·Filed 2006·Application pending·0 cites
- 1645US2008171436A1Methods of depositing a ruthenium filmASM GENITECH KOREA LTD·Filed 2008·Application pending·0 cites
- 1744US2007218702A1Semiconductor-processing apparatus with rotating susceptorASM JAPAN·Filed 2007·Application pending·0 cites
- 1843US2008075858A1Ald apparatus and method for depositing multiple layers using the sameASM GENITECH KOREA LTD·Filed 2007·Application pending·0 cites
- 1942US2007218701A1Semiconductor-processing apparatus with rotating susceptorASM JAPAN·Filed 2006·Application pending·0 cites
- 2039US5955146AProcess for the preparation of magnesium oxide films using organomagnesium compoundsKOREA RES INST CHEM TECH·Filed 1996·Granted Sep 21, 1999·7 cites·6 claims
- 2132US2016326008A1Indium-containing film and composition for forming the sameUP CHEMICAL CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →