Inventor · disambiguated record
Won Tae Koo
Also filed as: KOO WON TAE
17 granted patents·24 pending applications·3 citations·filing 2017–2025
86Inventor score
Top patents by PatentIndex Score
41 records- 0188US11818895B2Semiconductor device including ferroelectric layer and metal particles embedded in metal-organic framework layerSK HYNIX INC·Filed 2022·Granted Nov 14, 2023·1 cites·20 claims
- 0288US2025386553A1Semiconductor memory device and manufacturing method of semiconductor memory deviceSK HYNIX INC·Filed 2025·Application pending·0 cites
- 0387US12261219B2Semiconductor device including ferroelectric layer and insulation layer with metal particles and methods of manufacturing the sameSK HYNIX INC·Filed 2022·Granted Mar 25, 2025·1 cites·22 claims
- 0484US12310039B2Semiconductor device including epitaxial electrode layer and dielectric epitaxial structure and method of manufacturing the sameSK HYNIX INC·Filed 2022·Granted May 20, 2025·1 cites·21 claims
- 0582US2024310344A1Nanowire based hydrogen sensorsUNIV CALIFORNIA·Filed 2024·Application pending·0 cites
- 0677US2025107458A1Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogenSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0777US2024313073A1Semiconductor memory device and manufacturing method of semiconductor memory deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 0876US12058871B2Semiconductor device including ferroelectric layer and metal particles embedded in metal-organic framework layerSK HYNIX INC·Filed 2023·Granted Aug 6, 2024·0 cites·7 claims
- 0975US2024381655A1Semiconductor device including interlayer insulation structure including metal-organic frameworkSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1072US11913929B2Nanowire based hydrogen sensorsUNIV CALIFORNIA·Filed 2020·Granted Feb 27, 2024·0 cites·8 claims
- 1171US2022320305A1Semiconductor memory device and manufacturing method of semiconductor memory deviceSK HYNIX INC·Filed 2021·Application pending·0 cites
- 1269US11428660B2Metal oxide nanofibers including functionalized catalyst using chitosan-metal complexes, and member for gas sensor, and gas sensor using the metal oxide nanofibers, and method of fabricating the sameKOREA ADVANCED INST SCI & TECH·Filed 2019·Granted Aug 30, 2022·0 cites·10 claims
- 1368US12201040B2Electronic device including proton conductive layer and resistance change channel layer capable of receiving hydrogenSK HYNIX INC·Filed 2021·Granted Jan 14, 2025·0 cites·11 claims
- 1468US12082420B2Semiconductor device including interlayer insulation structure including metal-organic frameworkSK HYNIX INC·Filed 2021·Granted Sep 3, 2024·0 cites·16 claims
- 1568US2024249937A1Method of manufacturing semiconductor device by thermal treatment using laser lightSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1667US12329047B2Semiconductor device including resistance change layer and metal particle-embedded metal-organic framework layer and method of manufacturing the sameSK HYNIX INC·Filed 2022·Granted Jun 10, 2025·0 cites·28 claims
- 1766US2025338501A1Semiconductor device having a crystalline thin-film ferroelectric layer and method of manufactureSK HYNIX INC·Filed 2024·Application pending·0 cites
- 1864US12178145B2Semiconductor device including heat insulating layer and method of manufacturing the sameSK HYNIX INC·Filed 2022·Granted Dec 24, 2024·0 cites·26 claims
- 1964US11978626B2Method of treating target film and method of manufacturing semiconductor deviceSK HYNIX INC·Filed 2021·Granted May 7, 2024·0 cites·14 claims
- 2063US2025212492A1Semiconductor device including ferroelectric tunnel barrier layerSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2163US2025318138A1Semiconductor memory deviceSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2261US2024023343A1Semiconductor device including dielectric structure including ferroelectric layer and dielectric layerSK HYNIX INC·Filed 2022·Application pending·0 cites
- 2359US12308311B2Semiconductor device including interconnection structure including MXene and method of manufacturing the sameSK HYNIX INC·Filed 2022·Granted May 20, 2025·0 cites·12 claims
- 2459US12207572B2Electronic device including channel layer including variable resistance and method of manufacturing the sameSK HYNIX INC·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 2559US2025386744A1Semiconductor device including a plurality of resistance change layersSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2658US11955529B2Semiconductor device with interlayer insulation structure including metal-organic framework layer and method of manufacturing the sameSK HYNIX INC·Filed 2021·Granted Apr 9, 2024·0 cites·17 claims
- 2757US2024179926A1Semiconductor device including resistance change layer with metal-organic frameworkSK HYNIX INC·Filed 2023·Application pending·0 cites
- 2857US2025393484A1Semiconductor device including quantum dots and manufacturing methodSK HYNIX INC·Filed 2024·Application pending·0 cites
- 2956US2025221322A1Resistive memory cell, resistive memory array including the resistive memory cell and method of manufacturing the resistive memory cellSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3056US2025194440A1Electrochemical memory cell, neural network memory including the electrochemical memory cellSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3155US11943927B2Semiconductor memory deviceSK HYNIX INC·Filed 2021·Granted Mar 26, 2024·0 cites·6 claims
- 3254US12477962B2Electronic device having resistance change propertySK HYNIX INC·Filed 2022·Granted Nov 18, 2025·0 cites·26 claims
- 3352US10613068B2Colorimetric sensor material for detecting hydrogen sulfide gas, which includes one-dimensional polymer nanofiber coupled to lead acetate particles obtained by high temperature stirring and quenching, and method of the sameKOREA ADVANCED INST SCI & TECH·Filed 2017·Granted Apr 7, 2020·0 cites·8 claims
- 3452US2023098622A1Semiconductor device including ferroelectric layer and dielectric structure and method of manufacturing the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
- 3551US2024006508A1Semiconductor device including ferroelectric structure having moiré pattern of two-dimensional material layerSK HYNIX INC·Filed 2022·Application pending·0 cites
- 3650US2024105602A1Semiconductor device including connection portion between stacked structures and method of fabricating the sameSK HYNIX INC·Filed 2023·Application pending·0 cites
- 3749US2024081082A1Semiconductor device including barrier dielectric layer including ferroelectric materialSK HYNIX INC·Filed 2023·Application pending·0 cites
- 3848US2025169082A1Electrochemical memory cell and neural network memory including the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 3946US2023170381A1Semiconductor device including charge trap site and method of fabricating the sameSK HYNIX INC·Filed 2022·Application pending·0 cites
- 4044US2025344383A1Memory cell including electro-chemical memory element and semiconductor device including the sameSK HYNIX INC·Filed 2024·Application pending·0 cites
- 4142US2022352461A1Semiconductor device including active layer with variable resistanceSK HYNIX INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →