Inventor · disambiguated record
Woon-Kyung Lee
Also filed as: LEE WOON-KYUNG
57 granted patents·10 pending applications·662 citations·filing 1996–2022
98Inventor score
Top patents by PatentIndex Score
67 records- 0196US8243518B2NAND flash memory device and method of making sameOH DONG-YEAN·Filed 2009·Granted Aug 14, 2012·59 cites·18 claims
- 0295US9306041B2Vertical type semiconductor devicesHWANG SUNG-MIN·Filed 2014·Granted Apr 5, 2016·22 cites·20 claims
- 0395US6207490B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 27, 2001·146 cites·15 claims
- 0494US9299716B2Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 29, 2016·9 cites·20 claims
- 0594US6555865B2Nonvolatile semiconductor memory device with a multi-layer sidewall spacer structure and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 29, 2003·96 cites·24 claims
- 0693US8654585B2NAND flash memory device and method of making sameOH DONG-YEAN·Filed 2012·Granted Feb 18, 2014·16 cites·8 claims
- 0793US8456918B2NAND flash memory device and method of operating same to reduce a difference between channel potentials thereinOH DONG-YEAN·Filed 2009·Granted Jun 4, 2013·39 cites·12 claims
- 0891US8906805B2Methods of fabricating semiconductor devicesPARK SANG-YONG·Filed 2012·Granted Dec 9, 2014·12 cites·13 claims
- 0988US10461030B2Pad structures and wiring structures in a vertical type semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 29, 2019·5 cites·13 claims
- 1088US9087861B2Methods of manufacturing a semiconductor deviceHWANG SUNG-MIN·Filed 2014·Granted Jul 21, 2015·8 cites·19 claims
- 1187US6635532B2Method for fabricating NOR type flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 21, 2003·36 cites·17 claims
- 1282US9305830B2Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Apr 5, 2016·4 cites·7 claims
- 1381US7589374B2Semiconductor device and related fabrication methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 15, 2009·7 cites·11 claims
- 1476US9112045B2Nonvolatile memory device and fabricating method thereofKIM JU-HYUNG·Filed 2013·Granted Aug 18, 2015·4 cites·24 claims
- 1575US8264025B2Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portionLEE SEUNG-JUN·Filed 2008·Granted Sep 11, 2012·5 cites·10 claims
- 1674US8036043B2Nonvolatile semiconductor device and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·8 cites·17 claims
- 1774US7579244B2Method of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 25, 2009·3 cites·47 claims
- 1874US6933195B2Method of fabricating a flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Aug 23, 2005·15 cites·12 claims
- 1973US8836020B2Vertical nonvolatile memory devices having reference featuresLIM JU-YOUNG·Filed 2011·Granted Sep 16, 2014·6 cites·15 claims
- 2073US8116111B2Nonvolatile memory devices having electromagnetically shielding source platesKIM JONG-WON·Filed 2009·Granted Feb 14, 2012·3 cites·20 claims
- 2172US8404578B2Methods of forming nonvolatile memory devices having electromagnetically shielding source platesKIM JONG-WON·Filed 2012·Granted Mar 26, 2013·3 cites·21 claims
- 2272US8187967B2Method of manufacturing a non-volatile memory deviceLEE SEUNG-JUN·Filed 2009·Granted May 29, 2012·4 cites·16 claims
- 2372US7687860B2Semiconductor device including impurity regions having different cross-sectional shapesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 30, 2010·5 cites·15 claims
- 2472US7397130B2Semiconductor devices with contact holes self-aligned in two directionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·5 cites·10 claims
- 2571US7592664B2Nonvolatile memory structure and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 22, 2009·4 cites·19 claims
- 2670US7388249B2Semiconductor device having self-aligned gate patternSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 17, 2008·2 cites·20 claims
- 2770US6448112B2Cell array region of a NOR-type mask ROM device and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 10, 2002·11 cites·10 claims
- 2867US7847332B2Nonvolatile memory devices with oblique charge storage regions and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 7, 2010·2 cites·4 claims
- 2966US9209244B2Semiconductor device with vertical structures that penetrate conductive patterns and interlayer insulating patternsSHIM JAE-JOO·Filed 2012·Granted Dec 8, 2015·2 cites·20 claims
- 3066US8350344B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Granted Jan 8, 2013·2 cites·33 claims
- 3165US7494871B2Semiconductor memory devices and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·2 cites·14 claims
- 3265US7057226B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 6, 2006·7 cites·15 claims
- 3362US12125640B2Capacitor component and manufacturing method of capacitor componentSAMSUNG ELECTRO MECH·Filed 2022·Granted Oct 22, 2024·0 cites·25 claims
- 3462US7015087B2Gate-contact structure and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 21, 2006·2 cites·13 claims
- 3561US2023064255A1Nanowire bundle and method for manufacturing sameSAMSUNG ELECTRO MECH·Filed 2022·Application pending·0 cites
- 3660USRE47169ENAND flash memory device and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 18, 2018·1 cites·27 claims
- 3760US8237230B2Semiconductor device comprising a dummy well and method of fabricating the sameOH DONGYEAN·Filed 2009·Granted Aug 7, 2012·2 cites·8 claims
- 3859US6531360B2Method of manufacturing a flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 11, 2003·8 cites·22 claims
- 3958US5721698ARead only memory device and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 24, 1998·16 cites·9 claims
- 4057US8053848B2Semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·0 cites·19 claims
- 4157US6122188ANon-volatile memory device having multi-bit cell structure and a method of programming sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 19, 2000·21 cites·16 claims
- 4255US8933517B2Semiconductor device comprising a dummy wellSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 13, 2015·0 cites·12 claims
- 4353US5923606ANOR-type mask ROM having dual sense current pathsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jul 13, 1999·14 cites·20 claims
- 4452US8035149B2Nonvolatile memory devices with oblique charge storage regions and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 11, 2011·0 cites·4 claims
- 4552US5846863AMethod for manufacturing a semiconductor ROM deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Dec 8, 1998·13 cites·11 claims
- 4652US2014197546A1Pad structures and wiring structures in a vertical type semiconductor deviceHWANG SUNG-MIN·Filed 2014·Application pending·0 cites
- 4751US8119460B2Semiconductor device and method of forming the sameLEE JIN-SUNG·Filed 2011·Granted Feb 21, 2012·0 cites·17 claims
- 4850US8470704B2Nonvolatile memory device and method of forming the nonvolatile memory device including giving an upper portion of an insulating layer an etching selectivity with respect to a lower portionLEE SEUNG-JUN·Filed 2012·Granted Jun 25, 2013·0 cites·7 claims
- 4950US7851304B2Nonvolatile memory device and fabrication methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 14, 2010·0 cites·16 claims
- 5050US6573574B2Cell array region of a NOR-type mask ROM device and fabricating method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jun 3, 2003·2 cites·4 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →