Inventor · disambiguated record
Woo-Gwan Shim
Also filed as: SHIM WOO GWAN
32 granted patents·14 pending applications·187 citations·filing 2001–2024
96Inventor score
Top patents by PatentIndex Score
46 records- 0188US8766343B2Integrated circuit capacitors having sidewall supportsKANG DAE-HYUK·Filed 2012·Granted Jul 1, 2014·10 cites·20 claims
- 0288US8119476B2Methods of forming integrated circuit capacitors having sidewall supports and capacitors formed therebyKANG DAE-HYUK·Filed 2010·Granted Feb 21, 2012·10 cites·16 claims
- 0387US8790470B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2011·Granted Jul 29, 2014·8 cites·35 claims
- 0487US6565736B2Wet process for semiconductor device fabrication using anode water containing oxidative substances and cathode water containing reductive substances, and anode water and cathode water used in the wet processSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 20, 2003·42 cites·23 claims
- 0585US11664243B2Substrate processing apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 30, 2023·4 cites·10 claims
- 0684US8084367B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2007·Granted Dec 27, 2011·9 cites·31 claims
- 0782US8585917B2Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methodsLEE HYO-SAN·Filed 2011·Granted Nov 19, 2013·5 cites·36 claims
- 0880US7344999B2Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 18, 2008·7 cites·26 claims
- 0979US7498217B2Methods of manufacturing semiconductor memory devices with unit cells having charge trapping layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·9 cites·26 claims
- 1079US7435644B2Method of manufacturing capacitor of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 14, 2008·3 cites·20 claims
- 1178US7745338B2Method of forming fine pitch hardmask patterns and method of forming fine patterns of semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 29, 2010·7 cites·34 claims
- 1275US7449417B2Cleaning solution for silicon surface and methods of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·4 cites·18 claims
- 1374US6701942B2Method of and apparatus for removing contaminants from surface of a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 9, 2004·15 cites·21 claims
- 1473US7354868B2Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixtureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·4 cites·16 claims
- 1572US7820508B2Semiconductor device having capacitor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 26, 2010·3 cites·17 claims
- 1671US10910237B2Operating method for wet etching system and related systemSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 2, 2021·1 cites·20 claims
- 1771US7985999B2Semiconductor device having capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 26, 2011·2 cites·8 claims
- 1866US7459370B2Method of fabricating semiconductor memory device having plurality of storage node electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·2 cites·38 claims
- 1965US2025091077A1Home port, substrate treating apparatus, and method for discharging chemical solutionSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2064US7700496B2Transistor having a metal nitride layer pattern, etchant and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 20, 2010·2 cites·22 claims
- 2163US11361960B2Substrate processing apparatus and substrate processing system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 14, 2022·0 cites·20 claims
- 2263US7141123B2Method of and apparatus for removing contaminants from surface of a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·7 cites·4 claims
- 2363US7018892B2Semiconductor capacitor structure and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 28, 2006·10 cites·30 claims
- 2462US7544985B2Semiconductor capacitor structure and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 9, 2009·2 cites·9 claims
- 2562US7322385B2Apparatus for drying substrate and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 29, 2008·1 cites·14 claims
- 2662US7179739B2Methods of forming a semiconductor device including a metal silicide layer between a conductive plug and a bottom electrode of a capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 20, 2007·10 cites·21 claims
- 2761US7825030B2Method of forming a spacerSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·1 cites·8 claims
- 2860US2025105032A1Chemical liquid supply apparatus, and substrate treating apparatus having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2959US8637942B2Transistor having a metal nitride layer pattern, etchant and methods of forming the sameKIM SANG-YONG·Filed 2009·Granted Jan 28, 2014·2 cites·1 claims
- 3054US10707071B2Substrate processing apparatus and substrate processing system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 7, 2020·0 cites·19 claims
- 3154US7122478B2Method of manufacturing a semiconductor device using a polysilicon etching maskSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·4 cites·4 claims
- 3253US2008160743A1Composition for cleaning substrates and method of forming gate using the compositionSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3352US7879735B2Cleaning solution for silicon surface and methods of fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 1, 2011·0 cites·17 claims
- 3450US8058180B2Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixtureKWON DOO-WON·Filed 2008·Granted Nov 15, 2011·0 cites·15 claims
- 3550US2009023265A1Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor deviceMUN CHANG-SUP·Filed 2008·Application pending·0 cites
- 3649US2007051700A1Composition for cleaning substrates and method of forming gate using the compositionLEE HYO-SAN·Filed 2006·Application pending·0 cites
- 3748US2006172907A1Microelectronic cleaning agent(s) and method(s) of fabricating semiconductor device(s) using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3848US2008188049A1Methods of Manufacturing Non-Volatile Memory Devices Including Charge-Trapping LayersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3947US6844229B2Method of manufacturing semiconductor device having storage electrode of capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 18, 2005·3 cites·17 claims
- 4046US2009025755A1Method for treating substrateSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4145US2006183297A1Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor deviceMUN CHANG-SUP·Filed 2005·Application pending·0 cites
- 4243US2008047576A1Single-substrate type apparatus for processing a substrateSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4342US2006228890A1Cleaning solution and method of forming a metal pattern for a semiconductor device using the sameLEE HYO-SAN·Filed 2006·Application pending·0 cites
- 4440US2006246666A1Method of fabricating flash memory with u-shape floating gateHAN JEONG-NAM·Filed 2006·Application pending·0 cites
- 4538US2005074948A1Method of manufacturing shallow trench isolation structure using HF vapor etching processFiled 2004·Application pending·0 cites
- 4638US2007254425A1Methods of fabricating a semiconductor deviceKIM SANG-YONG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →