Inventor · disambiguated record
Woong-Chul Shin
Also filed as: SHIN WOONG-CHUL
12 granted patents·14 pending applications·70 citations·filing 2005–2022
87Inventor score
Top patents by PatentIndex Score
26 records- 0195US7902048B2Method of forming a phase change layer and method of manufacturing a storage node having the phase change layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 8, 2011·32 cites·7 claims
- 0286US7233017B2Multibit phase change memory device and method of driving the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Jun 19, 2007·21 cites·24 claims
- 0376US8445318B2Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the sameSHIN WOONG-CHUL·Filed 2011·Granted May 21, 2013·5 cites·13 claims
- 0476US8062978B2Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the sameCHOI SANG-MOO·Filed 2008·Granted Nov 22, 2011·6 cites·27 claims
- 0560US10703632B2Method of purifying carbon nanotubesSK INNOVATION CO LTD·Filed 2017·Granted Jul 7, 2020·1 cites·7 claims
- 0658US7572662B2Method of fabricating phase change RAM including a fullerene layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 11, 2009·1 cites·23 claims
- 0755US2008156651A1Method of forming phase change layer, method of manufacturing a storage node using the same, and method of manufacturing phase change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 0853US8043952B2Method of forming aluminum oxide layer and method of manufacturing charge trap memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 25, 2011·0 cites·19 claims
- 0953US2008050892A1Method of manufacturing a thin film structure, method of manufacturing a storage node using the same, method of manufacturing a phase change random access memory using the same and a thin film structure, a storage node and a phase change random access memory formed using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1052US2014318456A1Horizontal-type atomic layer deposition apparatus for large-area substratesNCD CO LTD·Filed 2014·Application pending·0 cites
- 1151US8003162B2Method of forming phase change layer using a germanium precursor and method of manufacturing phase change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 23, 2011·2 cites·23 claims
- 1251US7655940B2Storage node including diffusion barrier layer, phase change memory device having the same and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 2, 2010·2 cites·19 claims
- 1349US2008210924A1Phase change memory devices including phase change layer formed by selective growth methods and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1448US2007160760A1Methods of forming phase change material thin films and methods of manufacturing phase change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 1547US2014165910A1Apparatus for large-area atomic layer depositionNCD CO LTD·Filed 2014·Application pending·0 cites
- 1646US7668016B2Non-volatile memory devices and programming methods thereof including moving electrons through pad oxide layers between charge trap layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 23, 2010·0 cites·25 claims
- 1744US2024194632A1Wire coating apparatusSHIN WOONG CHUL·Filed 2022·Application pending·0 cites
- 1843US10040733B2Method of recovering 1,3-butadiene and methylethylketone from dehydration products of 2,3-butanediolSK INNOVATION CO LTD·Filed 2015·Granted Aug 7, 2018·0 cites·19 claims
- 1943US2024096516A1Bonding wire for semiconductor packageSHIN WOONG CHUL·Filed 2022·Application pending·0 cites
- 2042US2009021979A1Gate stack, capacitorless dynamic random access memory including the gate stack and methods of manufacturing and operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2141US2009279352A1Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the sameNOH JIN-SEO·Filed 2009·Application pending·0 cites
- 2240US7754586B2Method of surface treating a phase change layer and method of manufacturing a phase change memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 13, 2010·0 cites·17 claims
- 2340US2007114572A1Gate structure including multi-tunneling layer and method of fabricating the same, non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2439US2008023686A1Storage nodes, phase change memories including a doped phase change layer, and methods of operating and fabricating the sameNOH JIN-SEO·Filed 2007·Application pending·0 cites
- 2535US2008173860A1Phase change memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2634US2008145702A1Phase change layers having different crystal lattices in single layer, methods of forming the same, phase change memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →