Inventor · disambiguated record
Xiangdong Chen
Also filed as: CHEN XIANGDONG
166 granted patents·61 pending applications·1,401 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
227 records- 0198US11063045B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·5 cites·20 claims
- 0298US8129797B2Work function engineering for eDRAM MOSFETsCHEN XIANGDONG·Filed 2008·Granted Mar 6, 2012·120 cites·12 claims
- 0398US7368358B2Method for producing field effect device that includes epitaxially growing SiGe source/drain regions laterally from a silicon bodyIBM·Filed 2006·Granted May 6, 2008·62 cites·10 claims
- 0498US7057216B2High mobility heterojunction complementary field effect transistors and methods thereofIBM·Filed 2003·Granted Jun 6, 2006·151 cites·18 claims
- 0597US11632102B2Low-power flip-flop architecture with high-speed transmission gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 18, 2023·5 cites·20 claims
- 0697US9831272B2Metal oxide semiconductor cell device architecture with mixed diffusion break isolation trenchesQUALCOMM INC·Filed 2016·Granted Nov 28, 2017·26 cites·30 claims
- 0797US9431371B2Semiconductor package with a bridge interposerBROADCOM CORP·Filed 2015·Granted Aug 30, 2016·20 cites·21 claims
- 0896US12074168B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·2 cites·20 claims
- 0996US8923070B2FinFET based one-time programmable deviceBROADCOM CORP·Filed 2013·Granted Dec 30, 2014·21 cites·18 claims
- 1095US9059179B2Semiconductor package with a bridge interposerKARIKALAN SAMPATH K V·Filed 2011·Granted Jun 16, 2015·27 cites·20 claims
- 1195US8928128B2Semiconductor package with integrated electromagnetic shieldingKARIKALAN SAMPATH K V·Filed 2012·Granted Jan 6, 2015·37 cites·20 claims
- 1295US8299545B2Method and structure to improve body effect and junction capacitanceCHEN XIANGDONG·Filed 2010·Granted Oct 30, 2012·30 cites·11 claims
- 1395US7104250B1Injection spray pattern for direct injection spark ignition enginesFORD GLOBAL TECH LLC·Filed 2005·Granted Sep 12, 2006·54 cites·11 claims
- 1495US6972461B1Channel MOSFET with strained silicon channel on strained SiGeIBM·Filed 2004·Granted Dec 6, 2005·97 cites·16 claims
- 1594US12047079B2Flip-flop circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·2 cites·20 claims
- 1694US11545965B2Clock gating circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·3 cites·20 claims
- 1793US9318476B2High performance standard cell with continuous oxide definition and characterized leakage currentQUALCOMM INC·Filed 2014·Granted Apr 19, 2016·16 cites·14 claims
- 1892US12142637B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·2 cites·20 claims
- 1992US12107581B2Clock gating circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·1 cites·20 claims
- 2092US12066489B2Scan flip-flops with pre-setting combinational logicTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·1 cites·20 claims
- 2192US9640522B1V1 and higher layers programmable ECO standard cellsQUALCOMM INC·Filed 2016·Granted May 2, 2017·13 cites·26 claims
- 2292US8466473B2Structure and method for Vt tuning and short channel control with high k/metal gate MOSFETsCAI JIN·Filed 2010·Granted Jun 18, 2013·15 cites·25 claims
- 2392US7867839B2Method to reduce threshold voltage (Vt) in silicon germanium (SiGe), high-k dielectric-metal gate, p-type metal oxide semiconductor field effect transistorsIBM·Filed 2008·Granted Jan 11, 2011·21 cites·14 claims
- 2492US7361539B2Dual stress linerIBM·Filed 2006·Granted Apr 22, 2008·19 cites·11 claims
- 2591US12009824B2Clock gating circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·1 cites·20 claims
- 2691US9379058B2Grounding dummy gate in scaled layout designQUALCOMM INC·Filed 2014·Granted Jun 28, 2016·13 cites·15 claims
- 2791US9040960B2Heterojunction tunneling field effect transistors, and methods for fabricating the sameCHEN XIANGDONG·Filed 2012·Granted May 26, 2015·9 cites·7 claims
- 2891US7002209B2MOSFET structure with high mechanical stress in the channelIBM·Filed 2004·Granted Feb 21, 2006·61 cites·20 claims
- 2990US12199612B2Flip-flop with transistors having different threshold voltages, semiconductor device including same and methods of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 14, 2025·1 cites·20 claims
- 3090US10431686B1Integrated circuit (IC) employing a channel structure layout having an active semiconductor channel structure(s) and an isolated neighboring dummy semiconductor channel structure(s) for increased uniformityQUALCOMM INC·Filed 2018·Granted Oct 1, 2019·6 cites·28 claims
- 3190US9634026B1Standard cell architecture for reduced leakage current and improved decoupling capacitanceQUALCOMM INC·Filed 2016·Granted Apr 25, 2017·8 cites·12 claims
- 3290US7635620B2Semiconductor device structure having enhanced performance FET deviceIBM·Filed 2006·Granted Dec 22, 2009·16 cites·14 claims
- 3389US10483200B1Integrated circuits (ICs) employing additional output vertical interconnect access(es) (VIA(s)) coupled to a circuit output VIA to decrease circuit output resistanceQUALCOMM INC·Filed 2018·Granted Nov 19, 2019·5 cites·24 claims
- 3489US8441000B2Heterojunction tunneling field effect transistors, and methods for fabricating the sameCHEN XIANGDONG·Filed 2006·Granted May 14, 2013·12 cites·5 claims
- 3589US7432553B2Structure and method to optimize strain in CMOSFETsIBM·Filed 2005·Granted Oct 7, 2008·13 cites·6 claims
- 3689US7388267B1Selective stress engineering for SRAM stability improvementIBM·Filed 2006·Granted Jun 17, 2008·16 cites·5 claims
- 3789US7045873B2Dynamic threshold voltage MOSFET on SOIIBM·Filed 2003·Granted May 16, 2006·47 cites·20 claims
- 3888US9755618B1Low-area low clock-power flip-flopQUALCOMM INC·Filed 2016·Granted Sep 5, 2017·7 cites·19 claims
- 3988US9331016B2SOC design with critical technology pitch alignmentQUALCOMM INC·Filed 2014·Granted May 3, 2016·10 cites·15 claims
- 4088US8269275B2Method for fabricating a MOS transistor with reduced channel length variation and related structureCHEN XIANGDONG·Filed 2009·Granted Sep 18, 2012·9 cites·17 claims
- 4188US6744083B2Submicron MOSFET having asymmetric channel profileUNIV TEXAS·Filed 2002·Granted Jun 1, 2004·42 cites·15 claims
- 4288US2025330158A1Flip-flop circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4388US2025364976A1Bi-directional scan flip-flop circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4487US8872321B2Semiconductor packages with integrated heat spreadersZHAO SAM ZIQUN·Filed 2012·Granted Oct 28, 2014·9 cites·20 claims
- 4587US8445969B2High pressure deuterium treatment for semiconductor/high-K insulator interfaceCHEN XIANGDONG·Filed 2011·Granted May 21, 2013·8 cites·24 claims
- 4687US8298897B2Asymmetric channel MOSFETCHEN XIANGDONG·Filed 2012·Granted Oct 30, 2012·8 cites·9 claims
- 4787US2025357920A1Flip-flop with transistors having different threshold voltages and semiconductor device including sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4886US9979381B1Semi-data gated flop with low clock power/low internal power with minimal area overheadQUALCOMM INC·Filed 2016·Granted May 22, 2018·5 cites·22 claims
- 4985US8883605B2Decoupling composite capacitor in a semiconductor waferBROADCOM CORP·Filed 2013·Granted Nov 11, 2014·6 cites·20 claims
- 5084US9029983B2Metal-insulator-metal (MIM) capacitorQUALCOMM INC·Filed 2013·Granted May 12, 2015·6 cites·15 claims
Showing the top 50 of 227 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →