Inventor · disambiguated record
Xiaolong Fang
Also filed as: FANG XIAOLONG
11 granted patents·2 pending applications·56 citations·filing 2006–2021
88Inventor score
Top patents by PatentIndex Score
13 records- 0193US8980752B2Method of forming a plurality of spaced featuresMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 17, 2015·14 cites·20 claims
- 0290US8492278B2Method of forming a plurality of spaced featuresGOOD FARRELL·Filed 2010·Granted Jul 23, 2013·17 cites·28 claims
- 0388US9385278B2Semiconductor growth substrates and associated systems and methods for die singulationMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 5, 2016·5 cites·20 claims
- 0483US8951842B2Semiconductor growth substrates and associated systems and methods for die singulationFANG XIAOLONG·Filed 2012·Granted Feb 10, 2015·6 cites·15 claims
- 0580US11322630B2Monolithic infrared transceiverAPPLE INC·Filed 2020·Granted May 3, 2022·1 cites·17 claims
- 0675US7968425B2Isolation regionsMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 28, 2011·6 cites·49 claims
- 0771US8120137B2Isolation trench structureSMITH MICHAEL A·Filed 2008·Granted Feb 21, 2012·5 cites·30 claims
- 0865US12413043B2Self-mixing interference device with tunable microelectromechanical systemAPPLE INC·Filed 2021·Granted Sep 9, 2025·0 cites·20 claims
- 0960US11418010B2VCSEL array with tight pitch and high efficiencyAPPLE INC·Filed 2020·Granted Aug 16, 2022·0 cites·17 claims
- 1060US8546888B2Isolation regionsBIAN ZAILONG·Filed 2011·Granted Oct 1, 2013·1 cites·23 claims
- 1157US8143167B2Fabrication processes for forming dual depth trenches using a dry etch that deposits a polymerFANG XIAOLONG·Filed 2009·Granted Mar 27, 2012·1 cites·29 claims
- 1246US2007246795A1Dual depth shallow trench isolation and methods to form sameMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
- 1341US2007194402A1Shallow trench isolation structureMICRON TECHNOLOGY INC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →