Inventor · disambiguated record
Xiang Hu
Also filed as: HU XIANG · HU XIANG LIANG
59 granted patents·22 pending applications·125 citations·filing 2004–2025
98Inventor score
Files withGLOBALFOUNDRIES INC33HUAWEI TECH CO LTD20HU XIANG5ALIBABA GROUP HOLDING LTD4SEMICONDUCTOR MFG INT SHANGHAI CORP3
Top patents by PatentIndex Score
81 records- 0193US9735154B2Semiconductor structure having gap fill dielectric layer disposed between finsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 15, 2017·9 cites·20 claims
- 0292US11115801B2Traffic offloading method and related device in roaming scenarioHUAWEI TECH CO LTD·Filed 2020·Granted Sep 7, 2021·3 cites·17 claims
- 0392US10592555B1Intelligent customer services based on a vector propagation on a click graph modelALIBABA GROUP HOLDING LTD·Filed 2019·Granted Mar 17, 2020·14 cites·17 claims
- 0490US11688798B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Jun 27, 2023·2 cites·18 claims
- 0589US9105478B2Devices and methods of forming fins at tight fin pitchesGLOBALFOUNDRIES INC·Filed 2013·Granted Aug 11, 2015·9 cites·10 claims
- 0688US11399405B2Session management method, device, and systemHUAWEI TECH CO LTD·Filed 2020·Granted Jul 26, 2022·2 cites·15 claims
- 0786US7879732B2Thin film etching method and semiconductor device fabrication using sameCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Feb 1, 2011·8 cites·24 claims
- 0883US9224842B2Patterning multiple, dense features in a semiconductor device using a memorization layerGLOBALFOUNDRIES INC·Filed 2014·Granted Dec 29, 2015·5 cites·16 claims
- 0983US9121890B2Planar metrology pad adjacent a set of fins of a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 1, 2015·5 cites·15 claims
- 1082US9490129B2Integrated circuits having improved gate structures and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 8, 2016·5 cites·20 claims
- 1181US9040380B2Integrated circuits having laterally confined epitaxial material overlying fin structures and methods for fabricating sameGLOBALFOUNDRIES INC·Filed 2013·Granted May 26, 2015·6 cites·20 claims
- 1281US8916472B2Interconnect formation using a sidewall mask layerHU XIANG·Filed 2012·Granted Dec 23, 2014·6 cites·18 claims
- 1379US11265226B2Service management method and apparatus thereofHUAWEI TECH CO LTD·Filed 2019·Granted Mar 1, 2022·3 cites·14 claims
- 1477US9666476B2Dimension-controlled via formation processingGLOBALFOUNDRIES INC·Filed 2015·Granted May 30, 2017·2 cites·19 claims
- 1577US9520395B2FinFET devices comprising a dielectric layer/CMP stop layer/hardmask/etch stop layer/gap-fill material stackGLOBALFOUNDRIES INC·Filed 2015·Granted Dec 13, 2016·2 cites·8 claims
- 1677US9305785B2Semiconductor contacts and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 5, 2016·4 cites·20 claims
- 1777US9196499B2Method of forming semiconductor finsGLOBALFOUNDRIES INC·Filed 2014·Granted Nov 24, 2015·3 cites·20 claims
- 1877US9129905B2Planar metrology pad adjacent a set of fins of a fin field effect transistor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 8, 2015·3 cites·15 claims
- 1976US8907496B1Circuit structures and methods of fabrication with enhanced contact via electrical connectionGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 9, 2014·4 cites·20 claims
- 2075US10181420B2Devices with chamfer-less vias multi-patterning and methods for forming chamfer-less viasGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 15, 2019·2 cites·10 claims
- 2172US9305832B2Dimension-controlled via formation processingGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 5, 2016·2 cites·18 claims
- 2270US12068397B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 2370US2024411572A1Encoding scheduling method, server, client, and system for acquiring remote desktopALIBABA GROUP HOLDING LTD·Filed 2024·Application pending·0 cites
- 2468US12079647B2Encoding scheduling method, server, client, and system for acquiring remote desktopALIBABA GROUP HOLDING LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 2568US9817927B2Hard mask etch and dielectric etch aware overlap for via and metal layersGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 14, 2017·2 cites·20 claims
- 2668US9508794B2Mixed N/P-type fin semiconductor structure with epitaxial materials having increased surface area through multiple epitaxial headsGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 29, 2016·1 cites·9 claims
- 2768US8877642B2Double-pattern gate formation processing with critical dimension controlGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 4, 2014·2 cites·20 claims
- 2867US8940641B1Methods for fabricating integrated circuits with improved patterning schemesGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 27, 2015·2 cites·20 claims
- 2966US9275906B2Method for increasing a surface area of epitaxial structures in a mixed N/P type fin semiconductor structure by forming multiple epitaxial headsGLOBALFOUNDRIES INC·Filed 2014·Granted Mar 1, 2016·1 cites·8 claims
- 3065US9460963B2Self-aligned contacts and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Oct 4, 2016·1 cites·17 claims
- 3164US2025310264A1Service flow scheduling method and apparatusHUAWEI TECH CO LTD·Filed 2025·Application pending·0 cites
- 3263US2025348008A1Single pad overlay measurementASML NETHERLANDS BV·Filed 2023·Application pending·0 cites
- 3362USD1090067SHat rackHU XIANG·Filed 2025·Granted Aug 26, 2025·0 cites·1 claims
- 3462US8835292B2Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layerIBM·Filed 2012·Granted Sep 16, 2014·1 cites·19 claims
- 3562US2025284206A1Measurement of fabrication parameters based on moiré interference pattern componentsASML NETHERLANDS BV·Filed 2023·Application pending·0 cites
- 3660USD500566SPortions of a flashlightWAISUN CORP·Filed 2004·Granted Jan 4, 2005·11 cites·1 claims
- 3759US9236301B2Customized alleviation of stresses generated by through-substrate via(S)GLOBALFOUNDRIES INC·Filed 2013·Granted Jan 12, 2016·1 cites·17 claims
- 3859US2025219950A1Method and Apparatus for Establishing QOS RuleHUAWEI TECH CO LTD·Filed 2025·Application pending·0 cites
- 3957US9876498B2Physically unclonable product and fabrication method thereofSEMICONDUCTOR MFG INTERNATIONAL (BEIJING) CORPORATION·Filed 2016·Granted Jan 23, 2018·1 cites·19 claims
- 4057US9414258B2Method and apparatus for processing bearerHUAWEI TECH CO LTD·Filed 2013·Granted Aug 9, 2016·1 cites·18 claims
- 4157US9401263B2Feature etching using varying supply of power pulsesGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 26, 2016·1 cites·20 claims
- 4257US9064848B2ARC residue-free etchingGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 23, 2015·0 cites·16 claims
- 4356US10824679B2Intelligent customer services based on a vector propagation on a click graph modelALIBABA GROUP HOLDING LTD·Filed 2020·Granted Nov 3, 2020·0 cites·20 claims
- 4454US11849384B2User plane rerouting method and apparatusHUAWEI TECH CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·19 claims
- 4554US2019390153A1Fully automatic cell culture method and system thereof based on mechanical armCELLAUTO BIOLOGICAL AUTOMATION CO LTD·Filed 2019·Application pending·0 cites
- 4653US12068163B2Method for forming semiconductor structureSEMICONDUCTOR MFG INT BEIJING CORP·Filed 2021·Granted Aug 20, 2024·0 cites·19 claims
- 4753US7718987B2Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layersAGENCY SCIENCE TECH & RES·Filed 2005·Granted May 18, 2010·1 cites·26 claims
- 4853US2014356283A1Probes, Methods of Making Probes, and Methods of UseUNIV LELAND STANFORD JUNIOR·Filed 2014·Application pending·0 cites
- 4952US2022132413A1Network Slice Management Method and Related ApparatusHUAWEI TECH CO LTD·Filed 2022·Application pending·0 cites
- 5051US2023319147A1Method for application to access network, apparatus, and systemHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →