Inventor · disambiguated record
Xiong-Fei Yu
Also filed as: Yu xiong-fei
62 granted patents·9 pending applications·470 citations·filing 2009–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD55TAIWAN SEMICONDUCTOR MFG8HOU CHENG-HAO2LEE WEI-YANG2CHEN JIAN-HAO1
Top patents by PatentIndex Score
71 records- 0199US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0296US12015066B2Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·3 cites·20 claims
- 0396US8809175B2Methods of anneal after deposition of gate layersTSAI CHUN HSIUNG·Filed 2011·Granted Aug 19, 2014·27 cites·20 claims
- 0496US8334198B2Method of fabricating a plurality of gate structuresCHEN JIAN-HAO·Filed 2011·Granted Dec 18, 2012·50 cites·20 claims
- 0595US10468258B1Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·15 cites·20 claims
- 0694US9960053B2FinFET doping methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 1, 2018·10 cites·20 claims
- 0794US2025366188A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0890US11699621B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 0990US11171134B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·3 cites·20 claims
- 1088US10964543B2Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·4 cites·20 claims
- 1188US10504795B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·3 cites·20 claims
- 1288US2025343045A1Replacement Gate Methods That Include Treating Spacers to Widen GateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1387US8847333B2Techniques providing metal gate devices with multiple barrier layersYu xiong-fei·Filed 2011·Granted Sep 30, 2014·9 cites·20 claims
- 1486US10991695B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·2 cites·20 claims
- 1586US9831243B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·3 cites·20 claims
- 1686US8334197B2Method of fabricating high-k/metal gate deviceLEE DA-YUAN·Filed 2009·Granted Dec 18, 2012·13 cites·20 claims
- 1785US12456623B2Replacement gate methods that include treating spacers to widen gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 1884US2025344483A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1983US11640977B2Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 2, 2023·1 cites·13 claims
- 2083US9142404B2Systems and methods for annealing semiconductor device structures using microwave radiationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 22, 2015·5 cites·19 claims
- 2183US2025098205A1Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2283US2025331282A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2381US12272557B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 2481US10276399B2FinFET doping methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·2 cites·20 claims
- 2581US9837504B2Method of modifying capping layer in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 5, 2017·3 cites·20 claims
- 2681US9105624B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·3 cites·20 claims
- 2780US10867869B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·21 claims
- 2879US12471361B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 2979US12199158B2Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 3079US2024379366A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3178US12376364B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 3277US11069531B2Replacement gate methods that include treating spacers to widen gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·1 cites·20 claims
- 3376US10784359B2Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·20 claims
- 3476US8367563B2Methods for a gate replacement processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Feb 5, 2013·5 cites·20 claims
- 3574US11915979B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 3674US11908695B2Replacement gate methods that include treating spacers to widen gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 3773US10622356B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 14, 2020·1 cites·20 claims
- 3873US2023378294A1Triple layer high-k gate dielectric stack for workfunction engineeringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3972US11257819B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 4071US11862468B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 4171US9620386B2Methods of annealing after deposition of gate layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·2 cites·20 claims
- 4270US8658525B2Methods for a gate replacement processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 25, 2014·2 cites·20 claims
- 4369US2024021693A1Gate structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4468US11462626B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 4568US8580698B2Method for fabricating a gate dielectric layerLEE WEI-YANG·Filed 2010·Granted Nov 12, 2013·2 cites·20 claims
- 4666US11171061B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·0 cites·20 claims
- 4765US10522544B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 31, 2019·0 cites·20 claims
- 4864US12170321B2Fin field effect transistor having conformal and non-conformal gate dielectric layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 17, 2024·0 cites·20 claims
- 4961US10312236B2Techniques providing metal gate devices with multiple barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·0 cites·20 claims
- 5059US10756199B2Fin field effect transistors having conformal oxide layers and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Xiong-Fei Yu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →