Inventor · disambiguated record
Xiang Zhou
Also filed as: ZHOU XIANG · ZHOU XIANG-QIAN
9 granted patents·1 pending application·30 citations·filing 2017–2021
84Inventor score
Top patents by PatentIndex Score
10 records- 0196US11211253B2Atomic layer deposition and etch in a single plasma chamber for critical dimension controlLAM RES CORP·Filed 2020·Granted Dec 28, 2021·8 cites·18 claims
- 0292US10734238B2Atomic layer deposition and etch in a single plasma chamber for critical dimension controlLAM RES CORP·Filed 2017·Granted Aug 4, 2020·10 cites·18 claims
- 0388US12125711B2Reducing roughness of extreme ultraviolet lithography resistsLAM RES CORP·Filed 2020·Granted Oct 22, 2024·3 cites·20 claims
- 0480US10515815B2Atomic layer deposition and etch in a single plasma chamber for fin field effect transistor formationLAM RES CORP·Filed 2017·Granted Dec 24, 2019·4 cites·17 claims
- 0578US10950454B2Integrated atomic layer passivation in TCP etch chamber and in-situ etch-ALP methodLAM RES CORP·Filed 2017·Granted Mar 16, 2021·2 cites·16 claims
- 0678US10658174B2Atomic layer deposition and etch for reducing roughnessLAM RES CORP·Filed 2017·Granted May 19, 2020·3 cites·12 claims
- 0769US12046450B2Synchronization of RF generatorsLAM RES CORP·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 0861US2021287909A1Integrated atomic layer passivation in tcp etch chamber and in-situ etch-alp methodLAM RES CORP·Filed 2021·Application pending·0 cites
- 0960US11170997B2Atomic layer deposition and etch for reducing roughnessLAM RES CORP·Filed 2020·Granted Nov 9, 2021·0 cites·14 claims
- 1037US11798987B2Substrate for a controlled implantation of ions and method of preparing a substrate for a controlled implantation of ionsPARCAN NANOTECH CO LTD·Filed 2020·Granted Oct 24, 2023·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →