Inventor · disambiguated record
Xiaochen Zhu
Also filed as: ZHU XIAOCHEN
13 granted patents·2 pending applications·18 citations·filing 2014–2023
84Inventor score
Files withSANDISK TECHNOLOGIES LLC11SANDISK TECHNOLOGIES INC2TCL TECHNOLY ELECTRONICS HUIZHOU CO LTD1WESTERN DIGITAL TECH INC1
Top patents by PatentIndex Score
15 records- 0192US11942157B2Variable bit line bias for nonvolatile memorySANDISK TECHNOLOGIES LLC·Filed 2022·Granted Mar 26, 2024·3 cites·20 claims
- 0291US11955184B2Memory cell group read with compensation for different programming speedsSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Apr 9, 2024·4 cites·20 claims
- 0362US12153801B2Non-volatile memory with optimized operation sequenceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Nov 26, 2024·0 cites·17 claims
- 0460US12437960B2Rotatable TEM grid holder for improved FIB thinning processSANDISK TECHNOLOGIES INC·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 0557US12462877B2Program pulse duration increase for NAND program failureSANDISK TECHNOLOGIES INC·Filed 2023·Granted Nov 4, 2025·0 cites·13 claims
- 0656US12406743B2Non-volatile memory with smart control of overdrive voltageSANDISK TECHNOLOGIES LLC·Filed 2023·Granted Sep 2, 2025·0 cites·17 claims
- 0756US12046294B2Non-volatile memory with short preventionSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 23, 2024·0 cites·18 claims
- 0856USD741294SBluetooth speakerTCL TECHNOLY ELECTRONICS HUIZHOU CO LTD·Filed 2014·Granted Oct 20, 2015·11 cites·1 claims
- 0953US11783903B2Proactive edge word line leak detection for memory apparatus with on-pitch semi-circle drain side select gate technologySANDISK TECHNOLOGIES LLC·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 1051US12119065B2Non-volatile memory with zoned control for limiting programming for different groups of non-volatile memory cellsSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Oct 15, 2024·0 cites·9 claims
- 1147US12087373B2Non-volatile memory with optimized erase verify sequenceSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Sep 10, 2024·0 cites·13 claims
- 1244US12347497B2NAND early erase termination based on leakage current testWESTERN DIGITAL TECH INC·Filed 2022·Granted Jul 1, 2025·0 cites·18 claims
- 1344US11881271B2Non-volatile memory with engineered channel gradientSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 1443US2024029804A1Adaptive fail bits threshold number for erasing non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2022·Application pending·0 cites
- 1542US2024071533A1Adaptive gidl voltage for erasing non-volatile memorySANDISK TECHNOLOGIES LLC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →