Inventor · disambiguated record
Xue-Yu Qian
Also filed as: QIAN XUE · QIAN XUE Y · QIAN XUE-YU
26 granted patents·2,431 citations·filing 1995–2021
98Inventor score
Top patents by PatentIndex Score
26 records- 0199US6390019B1Chamber having improved process monitoring windowAPPLIED MATERIALS INC·Filed 1998·Granted May 21, 2002·186 cites·66 claims
- 0298US6712927B1Chamber having process monitoring windowAPPLIED MATERIALS INC·Filed 2000·Granted Mar 30, 2004·119 cites·70 claims
- 0398US6699399B1Self-cleaning etch processAPPLIED MATERIALS INC·Filed 2000·Granted Mar 2, 2004·500 cites·72 claims
- 0498US6379575B1Treatment of etching chambers using activated cleaning gasAPPLIED MATERIALS INC·Filed 1997·Granted Apr 30, 2002·375 cites·47 claims
- 0597US6016131AInductively coupled plasma reactor with an inductive coil antenna having independent loopsAPPLIED MATERIALS INC·Filed 1999·Granted Jan 18, 2000·137 cites·63 claims
- 0697US5907221AInductively coupled plasma reactor with an inductive coil antenna having independent loopsAPPLIED MATERIALS INC·Filed 1995·Granted May 25, 1999·150 cites·15 claims
- 0796US6447636B1Plasma reactor with dynamic RF inductive and capacitive coupling controlAPPLIED MATERIALS INC·Filed 2000·Granted Sep 10, 2002·215 cites·43 claims
- 0895US5919382AAutomatic frequency tuning of an RF power source of an inductively coupled plasma reactorAPPLIED MATERIALS INC·Filed 1996·Granted Jul 6, 1999·99 cites·56 claims
- 0994US6136211ASelf-cleaning etch processAPPLIED MATERIALS INC·Filed 1997·Granted Oct 24, 2000·160 cites·43 claims
- 1092US6113731AMagnetically-enhanced plasma chamber with non-uniform magnetic fieldAPPLIED MATERIALS INC·Filed 1997·Granted Sep 5, 2000·152 cites·42 claims
- 1189US6835275B1Reducing deposition of process residues on a surface in a chamberFiled 2000·Granted Dec 28, 2004·24 cites·36 claims
- 1287US6100536AElectron flood apparatus for neutralizing charge build-up on a substrate during ion implantationAPPLIED MATERIALS INC·Filed 1998·Granted Aug 8, 2000·51 cites·21 claims
- 1383US6291793B1Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminalAPPPLIED MATERIALS INC·Filed 1999·Granted Sep 18, 2001·34 cites·63 claims
- 1480US5801386AApparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using sameAPPLIED MATERIALS INC·Filed 1996·Granted Sep 1, 1998·36 cites·25 claims
- 1571US5534108AMethod and apparatus for altering magnetic coil current to produce etch uniformity in a magnetic field-enhanced plasma reactorAPPLIED MATERIALS INC·Filed 1995·Granted Jul 9, 1996·52 cites·28 claims
- 1669US6504126B2Plasma reactor with coil antenna of concentrically spiral conductors with ends in common regionsAPPLIED MATERIALS INC·Filed 2000·Granted Jan 7, 2003·5 cites·20 claims
- 1769US6369348B2Plasma reactor with coil antenna of plural helical conductors with equally spaced endsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 9, 2002·5 cites·23 claims
- 1865US5565074APlasma reactor with a segmented balanced electrode for sputtering process materials from a target surfaceAPPLIED MATERIALS INC·Filed 1995·Granted Oct 15, 1996·30 cites·34 claims
- 1964US5683539AInductively coupled RF plasma reactor with floating coil antenna for reduced capacitive couplingAPPLIED MATERIALS INC·Filed 1995·Granted Nov 4, 1997·29 cites·28 claims
- 2063US6373022B2Plasma reactor with antenna of coil conductors of concentric helices offset along the axis of symmetryAPPLIED MATERIALS INC·Filed 2000·Granted Apr 16, 2002·3 cites·25 claims
- 2162US6297468B1Inductively coupled plasma reactor with symmetrical parallel multiple coils having a common RF terminalAPPLIED MATERIALS INC·Filed 1997·Granted Oct 2, 2001·13 cites·49 claims
- 2259US12217154B2Method and apparatus with neural network operation and keyword spottingSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 4, 2025·0 cites·24 claims
- 2358US5667701AMethod of measuring the amount of capacitive coupling of RF power in an inductively coupled plasmaAPPLIED MATERIALS INC·Filed 1995·Granted Sep 16, 1997·22 cites·20 claims
- 2455US5705433AEtching silicon-containing materials by use of silicon-containing compoundsAPPLIED MATERIALS INC·Filed 1995·Granted Jan 6, 1998·19 cites·10 claims
- 2549US6369349B2Plasma reactor with coil antenna of interleaved conductorsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 9, 2002·3 cites·13 claims
- 2646US5863839ASilicon and polycide plasma etch appplications by use of silicon-containing compoundsAPPLIED MATERIALS INC·Filed 1997·Granted Jan 26, 1999·12 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →