Inventor · disambiguated record
Yasushi Akasaka
Also filed as: AKASAKA YASUSHI
33 granted patents·10 pending applications·1,533 citations·filing 1993–2021
98Inventor score
Files withTOSHIBA KK26TOKYO ELECTRON LTD10SEMICONDUCTOR LEADING EDGE TEC2AKASAKA YASUSHI1AKIYAMA KOJI1
Top patents by PatentIndex Score
43 records- 0198US6541829B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2000·Granted Apr 1, 2003·248 cites·14 claims
- 0297US7078776B2Low threshold voltage semiconductor deviceTOSHIBA KK·Filed 2004·Granted Jul 18, 2006·126 cites·4 claims
- 0396US6770944B2Semiconductor device having counter and channel impurity regionsTOSHIBA KK·Filed 2002·Granted Aug 3, 2004·121 cites·26 claims
- 0496US5719410ASemiconductor device wiring or electrodeTOSHIBA KK·Filed 1996·Granted Feb 17, 1998·173 cites·16 claims
- 0595US6939787B2Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal filmTOSHIBA KK·Filed 2004·Granted Sep 6, 2005·97 cites·6 claims
- 0695US6617226B1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2000·Granted Sep 9, 2003·75 cites·4 claims
- 0794US6100193AMethod of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1997·Granted Aug 8, 2000·137 cites·25 claims
- 0893US6346438B1Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 1998·Granted Feb 12, 2002·91 cites·32 claims
- 0992US5903053ASemiconductor deviceTOSHIBA KK·Filed 1996·Granted May 11, 1999·107 cites·29 claims
- 1088US5907188ASemiconductor device with conductive oxidation preventing film and method for manufacturing the sameTOSHIBA KK·Filed 1996·Granted May 25, 1999·82 cites·12 claims
- 1186US6162741ASemiconductor device and manufacturing method thereforTOSHIBA KK·Filed 1997·Granted Dec 19, 2000·77 cites·5 claims
- 1282US7622340B2Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2006·Granted Nov 24, 2009·8 cites·16 claims
- 1370US7718497B2Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2008·Granted May 18, 2010·3 cites·4 claims
- 1470US7071529B2Semiconductor device having a Damascene gate or a replacing gateSANYO ELECTRIC CO·Filed 2004·Granted Jul 4, 2006·15 cites·2 claims
- 1569US7892914B2Semiconductor device and manufacturing method thereofTOKYO ELECTRON LTD·Filed 2007·Granted Feb 22, 2011·4 cites·20 claims
- 1669US6133150ASemiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1999·Granted Oct 17, 2000·30 cites·16 claims
- 1769US5898203ASemiconductor device having solid phase diffusion sourcesTOSHIBA KK·Filed 1997·Granted Apr 27, 1999·29 cites·5 claims
- 1869US5434440ASemiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 1993·Granted Jul 18, 1995·35 cites·1 claims
- 1968US7754622B2Patterning method utilizing SiBN and photolithographyTOKYO ELECTRON LTD·Filed 2008·Granted Jul 13, 2010·2 cites·11 claims
- 2067US6989316B2Semiconductor device and method for manufacturingTOSHIBA KK·Filed 2003·Granted Jan 24, 2006·9 cites·1 claims
- 2165US6893980B1Semiconductor device and manufacturing method thereforTOSHIBA KK·Filed 2000·Granted May 17, 2005·8 cites·8 claims
- 2264US7208797B2Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Apr 24, 2007·8 cites·9 claims
- 2362US7432147B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted Oct 7, 2008·2 cites·20 claims
- 2458US5903027AMOSFET with solid phase diffusion sourceTOSHIBA KK·Filed 1997·Granted May 11, 1999·20 cites·9 claims
- 2557US6956259B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Oct 18, 2005·6 cites·11 claims
- 2653US7772671B2Semiconductor device having an element isolating insulating filmTOSHIBA KK·Filed 2008·Granted Aug 10, 2010·0 cites·4 claims
- 2751US7772076B2Method of manufacturing semiconductor device using dummy gate wiring layerTOSHIBA KK·Filed 2007·Granted Aug 10, 2010·0 cites·6 claims
- 2851US2023268183A1Electrode of semiconductor device and method of manufacturing sameTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 2950US7232751B2Semiconductor device and manufacturing method thereforTOSHIBA KK·Filed 2005·Granted Jun 19, 2007·0 cites·5 claims
- 3050US5698881AMOSFET with solid phase diffusion sourceTOSHIBA KK·Filed 1994·Granted Dec 16, 1997·17 cites·5 claims
- 3150US2014242789A1Semiconductor device manufacturing methodTOKYO ELECTRON LTD·Filed 2014·Application pending·0 cites
- 3246US8741786B2Fabrication method of semiconductor deviceAKIYAMA KOJI·Filed 2012·Granted Jun 3, 2014·0 cites·10 claims
- 3346US7285461B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Oct 23, 2007·0 cites·13 claims
- 3445US7994562B2Memory apparatusTOKYO ELECTRON LTD·Filed 2009·Granted Aug 9, 2011·0 cites·6 claims
- 3545US2016181109A1Semiconductor device manufacturing methodTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 3642US2016040287A1Tungsten Film Forming MethodTOKYO ELECTRON LTD·Filed 2015·Application pending·0 cites
- 3740US2004070045A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2003·Application pending·0 cites
- 3838US2005167767A1Semiconductor apparatus and manufacturing method of the sameSEMICONDUCTOR LEADING EDGE TEC·Filed 2005·Application pending·0 cites
- 3937US2005082605A1Semiconductor device and method for manufacturing semiconductor deviceSEMICONDUCTOR LEADING EDGE TEC·Filed 2004·Application pending·0 cites
- 4036US2006081939A1Semiconductor device having misfet using high dielectric constant gate insulation film and method for fabricating the sameAKASAKA YASUSHI·Filed 2005·Application pending·0 cites
- 4136US2002056874A1Semiconductor device and method for fabricating the sameFiled 2000·Application pending·0 cites
- 4236US2011039389A1Manufacturing method of semiconductor deviceTOKYO ELECTRON LTD·Filed 2010·Application pending·0 cites
- 4331US5766965ASemiconductor device and method of manufacturing the sameFiled 1994·Granted Jun 16, 1998·3 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Yasushi Akasaka files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →