Inventor · disambiguated record
Ya-Yun Cheng
Also filed as: CHENG YA · CHENG YA-YUN
29 granted patents·18 pending applications·109 citations·filing 2002–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD34LIN NAN-CHUN2TAIWAN SEMICONDUCTOR MFG2APTOS TECHNOLOGY INC1CHENG UEI PREC IND CO LTD1
Top patents by PatentIndex Score
47 records- 0195US10804163B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·9 cites·20 claims
- 0294US8371866B1Card connectorCHENG UEI PREC IND CO LTD·Filed 2011·Granted Feb 12, 2013·47 cites·11 claims
- 0392US11508627B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
- 0490US9953836B2Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·5 cites·19 claims
- 0590US8866235B2Source and drain dislocation fabrication in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 21, 2014·10 cites·19 claims
- 0689US10396156B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·4 cites·20 claims
- 0787US2025324606A1Semiconductor memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0886US2025318136A1Semiconductor memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0985US2025365938A1Back-end-of-line memory devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1084US10991800B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·2 cites·18 claims
- 1183US2025351366A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1282US12363909B2Semiconductor memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1382US12363908B2Semiconductor memory devices with varying channel width and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1482US8619431B2Three-dimensional system-in-package package-on-package structureLIN NAN-CHUN·Filed 2010·Granted Dec 31, 2013·10 cites·16 claims
- 1580US12170314B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 17, 2024·0 cites·20 claims
- 1679US11908749B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1778US11916107B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 1878US2025063777A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1975US2025318139A1Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2075US2025311227A1Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2174US11856783B2Semiconductor memory devices with different thicknesses of word lines and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 2273US12068371B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 2373US11758734B2Semiconductor memory devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·0 cites·16 claims
- 2469US12349363B2Ferroelectric device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 2567US12376309B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 2665US2024032274A1Back-end-of-line memory devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2764US8884640B2Integrated high-speed probe systemWANG CHUN-CHI·Filed 2012·Granted Nov 11, 2014·2 cites·21 claims
- 2863US12048164B2Memory array and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2962US11158508B2Barrier layer above anti-punch through (APT) implant region to improve mobility of channel region of fin field effect transistor (finFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 26, 2021·0 cites·20 claims
- 3062US2023413571A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3161US12324194B2Source/drain engineering for ferroelectric field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·21 claims
- 3261US6570263B1Structure of plated wire of fiducial marks for die-dicing packageVATE TECHNOLOGY CO LTD·Filed 2002·Granted May 27, 2003·12 cites·2 claims
- 3358US9230828B2Source and drain dislocation fabrication in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 5, 2016·0 cites·20 claims
- 3458US2024341075A1Semiconductor memory devices with improved performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3557US8788185B2Method and system for estimating traffic information by using integration of location update events and call eventsYEN SHENG-YING·Filed 2012·Granted Jul 22, 2014·6 cites·17 claims
- 3657US2025098187A1Semiconductor memory cell structure including a hydrogen absorption layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3755USRE48304ESource and drain dislocation fabrication in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 10, 2020·0 cites·40 claims
- 3853US2023389283A1Memory device with back-gate transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3951US11557650B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 4051US9519010B2Integrated high-speed probe systemMPI CORP·Filed 2014·Granted Dec 13, 2016·0 cites·26 claims
- 4150US2024113234A1Transistor device with multi-layer channel structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4248US8984885B2Thermal magnetic engine and thermal magnetic engine systemKUO CHUNG-JUNG·Filed 2012·Granted Mar 24, 2015·0 cites·16 claims
- 4348US2023240063A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4438US2013044288A1Eyeglasses structureEAKAU INTERNAT OPTICAL ELECTRONIC CO LTD·Filed 2011·Application pending·0 cites
- 4534US2015016080A1Method for manufacturing an embedded package and structure thereofAPTOS TECHNOLOGY INC·Filed 2014·Application pending·0 cites
- 4630US2018304840A1Automobile Bumper StructurePLASTIC OMNIUM CIE·Filed 2016·Application pending·0 cites
- 4729US2012188727A1EMI Shielding in a Package ModuleLIN NAN-CHUN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →