Inventor · disambiguated record
Yasushi Iyechika
Also filed as: IYECHIKA YASUSHI
34 granted patents·6 pending applications·882 citations·filing 1992–2021
97Inventor score
Files withSUMITOMO CHEMICAL CO21NUFLARE TECHNOLOGY INC15OHORI TATSUYA2SUMITOMO CHEMICAL COMPANY LIMT2
Top patents by PatentIndex Score
40 records- 0199US5317169AOrganic electroluminescence deviceSUMITOMO CHEMICAL CO·Filed 1992·Granted May 31, 1994·318 cites·14 claims
- 0296US9453721B2Curvature measurement apparatus and methodNUFLARE TECHNOLOGY INC·Filed 2015·Granted Sep 27, 2016·20 cites·18 claims
- 0394US6503610B2Group III-V compound semiconductor and method of producing the sameSUMITOMO CHEMICAL CO·Filed 2001·Granted Jan 7, 2003·105 cites·7 claims
- 0494US5587014AMethod for manufacturing group III-V compound semiconductor crystalsSUMITOMO CHEMICAL CO·Filed 1994·Granted Dec 24, 1996·118 cites·10 claims
- 0592US5726457AOrganic electroluminescence deviceSUMITOMO CHEMICAL CO·Filed 1995·Granted Mar 10, 1998·92 cites·8 claims
- 0682US7459326B2Method for producing and epitaxial substrate for compound semiconductor light-emitting deviceSUMITOMO CHEMICAL CO·Filed 2006·Granted Dec 2, 2008·8 cites·9 claims
- 0781US10204819B2Vapor phase growth apparatus and ring-shaped holder having a curved mounting surface with convex and concave regionsNUFLARE TECHNOLOGY INC·Filed 2017·Granted Feb 12, 2019·1 cites·13 claims
- 0873US6346720B1Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting elementSUMITOMO CHEMICAL CO·Filed 1996·Granted Feb 12, 2002·29 cites·13 claims
- 0971US6875273B2Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductorSUMITOMO CHEMICAL CO·Filed 2002·Granted Apr 5, 2005·16 cites·26 claims
- 1070US11072856B2Vapor phase growth methodNUFLARE TECHNOLOGY INC·Filed 2019·Granted Jul 27, 2021·1 cites·8 claims
- 1169US12338543B2Vapor phase growth method using reflector with changeable patternNUFLARE TECHNOLOGY INC·Filed 2019·Granted Jun 24, 2025·0 cites·2 claims
- 1269US6756246B2Method for fabricating III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 2002·Granted Jun 29, 2004·14 cites·3 claims
- 1368US8277893B2Chemical vapor deposition apparatusOHORI TATSUYA·Filed 2009·Granted Oct 2, 2012·2 cites·20 claims
- 1467US7098484B2Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting deviceSUMITOMO CHEMICAL CO·Filed 2003·Granted Aug 29, 2006·13 cites·7 claims
- 1567US6472298B2Layered group III-V compound semiconductor, method of manufacturing the same and light emitting elementSUMITOMO CHEMICAL CO·Filed 2001·Granted Oct 29, 2002·11 cites·1 claims
- 1666US6716724B1Method of producing 3-5 group compound semiconductor and semiconductor elementSUMITOMO CHEMICAL CO·Filed 2003·Granted Apr 6, 2004·10 cites·3 claims
- 1765US2018066381A1Vapor phase growth apparatus and vapor phase growth methodNUFLARE TECHNOLOGY INC·Filed 2017·Application pending·0 cites
- 1859US6946308B2Method of manufacturing III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 2003·Granted Sep 20, 2005·7 cites·7 claims
- 1959US6806502B23-5 Group compound semiconductor and light emitting deviceSUMITOMO CHEMICAL COMPANY LIMT·Filed 2001·Granted Oct 19, 2004·10 cites·8 claims
- 2059US6023077AGroup III-V compound semiconductor and light-emitting deviceSUMITOMO CHEMICAL CO·Filed 1996·Granted Feb 8, 2000·27 cites·12 claims
- 2159US2021310118A1Vapor phase growth methodNUFLARE TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2258US6225195B1Method for manufacturing group III-V compound semiconductorSUMITOMO CHEMICAL CO·Filed 1998·Granted May 1, 2001·22 cites·10 claims
- 2357US6844574B1III-V compound semiconductorSUMITOMO CHEMICAL CO·Filed 2000·Granted Jan 18, 2005·6 cites·10 claims
- 2456US5708301AElectrode material and electrode for III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 1995·Granted Jan 13, 1998·17 cites·3 claims
- 2551US11022428B2Growth rate detection apparatus, vapor deposition apparatus, and vapor deposition rate detection methodNUFLARE TECHNOLOGY INC·Filed 2020·Granted Jun 1, 2021·0 cites·18 claims
- 2650US2007051316A1Chemical vapor deposition apparatusOHORI TATSUYA·Filed 2006·Application pending·0 cites
- 2748US10151637B2Film forming apparatus and thermometry methodNUFLARE TECHNOLOGY INC·Filed 2016·Granted Dec 11, 2018·0 cites·20 claims
- 2848US2021233787A1Warp measurement device, vapor deposition apparatus, and warp measurement methodNUFLARE TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2947US10351949B2Vapor phase growth methodNUFLARE TECHNOLOGY INC·Filed 2017·Granted Jul 16, 2019·0 cites·22 claims
- 3045US10488334B2Growth-rate measuring apparatus and growth-rate detection methodNUFLARE TECHNOLOGY INC·Filed 2018·Granted Nov 26, 2019·0 cites·17 claims
- 3145US6617235B2Method of manufacturing Group III-V compound semiconductorSUMITOMO CHEMICAL CO·Filed 1996·Granted Sep 9, 2003·11 cites·14 claims
- 3245US5980632AMember for use in production device for semiconductorsSUMITOMO CHEMICAL CO·Filed 1998·Granted Nov 9, 1999·12 cites·10 claims
- 3343US9995632B2Radiation thermometer and thermometry methodNUFLARE TECHNOLOGY INC·Filed 2015·Granted Jun 12, 2018·0 cites·15 claims
- 3442US10619996B2Vapor phase growth rate measuring apparatus, vapor phase growth apparatus, and growth rate detection methodNUFLARE TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·0 cites·20 claims
- 3537US2018286719A1Film forming apparatus and film forming methodNUFLARE TECHNOLOGY INC·Filed 2018·Application pending·0 cites
- 3636US7205577B2Group 3-5 compound semiconductor and light emitting diodeSUMITOMO CHEMICAL COMPANY LIMT·Filed 2002·Granted Apr 17, 2007·0 cites·8 claims
- 3735US6104044ASemiconductor compound electrode material containing calcium and a noble metalSUMITOMO CHEMICAL CO·Filed 1997·Granted Aug 15, 2000·6 cites·15 claims
- 3834US6388323B1Electrode material and electrode for III-V group compound semiconductorSUMITOMO CHEMICAL CO·Filed 1997·Granted May 14, 2002·3 cites·2 claims
- 3934US2018057938A1Vapor-phase growth methodNUFLARE TECHNOLOGY INC·Filed 2017·Application pending·0 cites
- 4032US6100105AFabrication of InGaAlN based compound semiconductor deviceSUMITOMO CHEMICAL CO·Filed 1997·Granted Aug 8, 2000·3 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →