Chemical vapor deposition apparatus

Abstract

A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

1 . A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate.  
   
   
       2 . The chemical vapor deposition apparatus according to  claim 1 , wherein said light transmitting ceramics plate transmits heat ray radiated from the heater and shields the heater against the feed gas or the reaction gas.  
   
   
       3 . The chemical vapor deposition apparatus according to  claim 1 , wherein a material for said light transmitting ceramics plate is an oxide-based ceramics or nitride-based ceramics.  
   
   
       4 . The chemical vapor deposition apparatus according to  claim 1 , wherein a material for said supporting member is at least one selected from a group consisting of metal, alloy, metal oxide, ceramics and carbon.  
   
   
       5 . The chemical vapor deposition apparatus according to  claim 1 , wherein said susceptor mounts plural of the substrates.  
   
   
       6 . The chemical vapor deposition apparatus according to  claim 1 , wherein said light transmitting ceramics plate is supported at its outer peripheral edge and at its central portion.  
   
   
       7 . The chemical vapor deposition apparatus according to  claim 1 , wherein said light transmitting ceramics plate has a hole at its central portion, and wherein its outer peripheral edge and a peripheral of the hole are held by means of the supporting member.  
   
   
       8 . The chemical vapor deposition apparatus according to  claim 1 , wherein said light transmitting ceramics plate is held or reinforced by means of a heat-resistant supporting member from downside.  
   
   
       9 . The chemical vapor deposition apparatus according to  claim 8 , wherein a material for said heat-resistant supporting member is at least one selected from a group consisting of metal, alloy, metal oxide, nitride-based ceramics, carbide-based ceramics, boride-based ceramics and carbon.  
   
   
       10 . The chemical vapor deposition apparatus according to  claim 8 , wherein said heat-resistant supporting member comprises an outer peripheral part, a central part and a coupling part for the outer peripheral part and the central part.  
   
   
       11 . The chemical vapor deposition apparatus according to  claim 8 , wherein said heat-resistant supporting member comprises an outer peripheral part, a central part and a geometrical part disposed between the outer peripheral part and the central part.  
   
   
       12 . The chemical vapor deposition apparatus according to  claim 8 , wherein said heat-resistant supporting member consists of an outer peripheral part and a geometrical part disposed inside the outer peripheral part.  
   
   
       13 . The chemical vapor deposition apparatus according to  claim 1 , which forms a semiconductor film of a garium nitride-based compound over the surface of the substrate.  
   
   
       14 . The chemical vapor deposition apparatus according to  claim 1 , wherein said light transmitting ceramics plate is disposed with a gap facing the heater.  
   
   
       15 . The chemical vapor deposition apparatus according to  claim 14 , further comprises means for introducing an inert gas into said gap between the light transmitting ceramics plate and the heater.