Inventor · disambiguated record
Yan-Ting Lin
Also filed as: LIN YAN · LIN YAN-TING
24 granted patents·11 pending applications·41 citations·filing 2011–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD26INER AEC EXECUTIVE YUAN2Lin yan ting2TAIWAN SEMICONDUCTOR MFG2ASML NETHERLANDS BV1
Top patents by PatentIndex Score
35 records- 0195US12080759B2Transistor source/drain regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 0294US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 0392US11075108B2Mechanism for FinFET well dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·4 cites·20 claims
- 0492US9406546B2Mechanism for FinFET well dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 2, 2016·8 cites·20 claims
- 0591US9076762B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·7 cites·20 claims
- 0686US12191393B2Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
- 0786US2025351483A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0885US11133416B2Methods of forming semiconductor devices having plural epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·3 cites·20 claims
- 0981US10710203B2Universal jig for clamping wind turbine bladesINER AEC EXECUTIVE YUAN·Filed 2018·Granted Jul 14, 2020·2 cites·10 claims
- 1081US2024096958A1Supportive layer in source/drains of finfet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1179US11855142B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1278US2024371930A1Transistor source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1377US11742237B2Mechanism for FinFET well dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 1477US11735668B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 1576US2025089295A1Low ge isolated epitaxial layer growth over nano-sheet architecture design for rp reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1675US10297492B2Mechanism for FinFET well dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 21, 2019·1 cites·20 claims
- 1772US11482620B2Interfacial layer between Fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·0 cites·20 claims
- 1872US11476331B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 1971US2025126836A1Source/drain structure dopant cluster designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2070US2024194788A1Nanosheet semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2162US12112975B2Mechanism for finFET well dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 2262US10944005B2Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 2362US10854715B2Supportive layer in source/drains of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 2461US12477794B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 2561US9012315B2Methods and systems for dopant activation using microwave radiationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 21, 2015·1 cites·18 claims
- 2660US8555641B2Cooling device for Stirling circulated dry storage containerLIN YAN-TING·Filed 2011·Granted Oct 15, 2013·2 cites·9 claims
- 2759US11942550B2Nanosheet semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 2857US9559186B2Epitaxially grown stacked contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·0 cites·20 claims
- 2955US2024021618A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3051US2020370533A1Blade protection member, and wind turbine blade and wind turbine using sameINER AEC EXECUTIVE YUAN·Filed 2019·Application pending·0 cites
- 3147US2024104284A1Feature based cell extraction for pattern regionsASML NETHERLANDS BV·Filed 2021·Application pending·0 cites
- 3246US10920742B2Noise-reduction device for wind turbine and the wind turbine applied thereofINSTITUTE OF NUCLEAR ENNERGY RES ATOMIC ENERGY COUNCIL EXECUTIVE YUAN R O C·Filed 2018·Granted Feb 16, 2021·0 cites·9 claims
- 3345US2021265350A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 3444US11440630B2Self-righting unmanned ship suitable for adverse sea conditions and working mode thereofUNIV DALIAN TECH·Filed 2019·Granted Sep 13, 2022·0 cites·3 claims
- 3538US2019093628A1Vertical axis wind turbine with a telescopic rotational diameterLin yan ting·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →