Inventor · disambiguated record
Yanxiang Liu
Also filed as: LIU YANXIANG
61 granted patents·8 pending applications·214 citations·filing 2008–2023
98Inventor score
Top patents by PatentIndex Score
69 records- 0199US9570442B1Applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structureQUALCOMM INC·Filed 2016·Granted Feb 14, 2017·58 cites·28 claims
- 0296US9653466B2FinFET device and method of making the sameQUALCOMM INC·Filed 2015·Granted May 16, 2017·15 cites·24 claims
- 0395US9537007B2FinFET with cut gate stressorQUALCOMM INC·Filed 2015·Granted Jan 3, 2017·12 cites·19 claims
- 0494US9087860B1Fabricating fin-type field effect transistor with punch-through stop regionGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 21, 2015·23 cites·20 claims
- 0591US9853112B2Device and method to connect gate regions separated using a gate cutQUALCOMM INC·Filed 2015·Granted Dec 26, 2017·7 cites·15 claims
- 0689US9640538B2Embedded DRAM in replacement metal gate technologyGLOBALFOUNDRIES INC·Filed 2014·Granted May 2, 2017·8 cites·18 claims
- 0789US8809178B2Methods of forming bulk FinFET devices with replacement gates so as to reduce punch through leakage currentsLIU YANXIANG·Filed 2012·Granted Aug 19, 2014·13 cites·20 claims
- 0888US10134734B2Fin field effect transistor (FET) (FinFET) complementary metal oxide semiconductor (CMOS) circuits employing single and double diffusion breaks for increased performanceQUALCOMM INC·Filed 2016·Granted Nov 20, 2018·5 cites·13 claims
- 0987US10062763B2Method and apparatus for selectively forming nitride caps on metal gateQUALCOMM INC·Filed 2015·Granted Aug 28, 2018·6 cites·21 claims
- 1087US9076791B1MOS transistor operated as OTP cell with gate dielectric operating as an e-fuse elementGLOBAL FOUNDRIES INC·Filed 2014·Granted Jul 7, 2015·8 cites·20 claims
- 1184US9607988B2Off-center gate cutQUALCOMM INC·Filed 2015·Granted Mar 28, 2017·4 cites·29 claims
- 1283US10833017B2Contact for semiconductor deviceQUALCOMM INC·Filed 2016·Granted Nov 10, 2020·4 cites·12 claims
- 1383US9406752B2FinFET conformal junction and high EPI surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·3 cites·13 claims
- 1481US9472554B2Integrated circuits having FinFET semiconductor devices and methods of fabricating the same to resist sub-fin current leakageGLOBALFOUNDRIES INC·Filed 2013·Granted Oct 18, 2016·6 cites·12 claims
- 1581US8637372B2Methods for fabricating a FINFET integrated circuit on a bulk silicon substrateLIU YANXIANG·Filed 2011·Granted Jan 28, 2014·5 cites·14 claims
- 1679US10141306B2Systems, methods, and apparatus for improved finFETsQUALCOMM INC·Filed 2017·Granted Nov 27, 2018·2 cites·17 claims
- 1778US9437740B2Epitaxially forming a set of fins in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 6, 2016·2 cites·7 claims
- 1877US9673757B2Modified tunneling field effect transistors and fabrication methodsGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 6, 2017·3 cites·14 claims
- 1977US9064868B2Advanced faraday shield for a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2012·Granted Jun 23, 2015·4 cites·16 claims
- 2076US9142316B2Embedded selector-less one-time programmable non-volatile memoryGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 22, 2015·5 cites·16 claims
- 2175US8809962B2Transistor with reduced parasitic capacitanceLIU YANXIANG·Filed 2011·Granted Aug 19, 2014·4 cites·20 claims
- 2273US12466797B2Compound having anti-aging and discoloration resistance effects and preparation method thereforSENNICS CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·21 claims
- 2373US9142640B1Containment structure for epitaxial growth in non-planar semiconductor structureGLOBALFOUNDRIES INC·Filed 2014·Granted Sep 22, 2015·3 cites·10 claims
- 2471US9087743B2Silicon-on-insulator finFET with bulk source and drainGLOBALFOUNDRIES INC·Filed 2013·Granted Jul 21, 2015·2 cites·20 claims
- 2570US9997360B2Method for mitigating layout effect in FINFETQUALCOMM INC·Filed 2016·Granted Jun 12, 2018·1 cites·15 claims
- 2670US9577040B2FinFET conformal junction and high epi surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 21, 2017·1 cites·20 claims
- 2768US9252272B2FinFET semiconductor device having local buried oxideGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 2, 2016·1 cites·20 claims
- 2867US9136330B2Shallow trench isolationGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 15, 2015·1 cites·8 claims
- 2966US9034737B2Epitaxially forming a set of fins in a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2013·Granted May 19, 2015·1 cites·20 claims
- 3064US9653281B2Structure and method for tunable memory cells including fin field effect transistorsQUALCOMM INC·Filed 2015·Granted May 16, 2017·1 cites·20 claims
- 3162US8835292B2Method of manufacturing semiconductor devices including replacement metal gate process incorporating a conductive dummy gate layerIBM·Filed 2012·Granted Sep 16, 2014·1 cites·19 claims
- 3261US8557668B2Method for forming N-shaped bottom stress linerYANG XIAODONG·Filed 2012·Granted Oct 15, 2013·1 cites·12 claims
- 3360US8846476B2Methods of forming multiple N-type semiconductor devices with different threshold voltages on a semiconductor substrateGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 30, 2014·1 cites·31 claims
- 3459US8841732B2Self-adjusting latch-up resistance for CMOS devicesLIU YANXIANG·Filed 2011·Granted Sep 23, 2014·1 cites·13 claims
- 3558US10181403B2Layout effect mitigation in FinFETQUALCOMM INC·Filed 2018·Granted Jan 15, 2019·0 cites·8 claims
- 3655US12080999B2Railway vehicle and storage battery circuit breaker box thereofCRRC TANGSHAN CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 3754US9978738B2System, apparatus, and method for N/P tuning in a fin-FETQUALCOMM INC·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 3854US9559176B2FinFET conformal junction and abrupt junction with reduced damage method and deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 31, 2017·0 cites·20 claims
- 3953US12073863B2Memory and electronic deviceHUAWEI TECH CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·14 claims
- 4053US10003302B2Modified tunneling field effect transistors and fabrication methodsGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 19, 2018·0 cites·14 claims
- 4153US9385126B2Silicon-on-insulator finFET with bulk source and drainGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 5, 2016·0 cites·15 claims
- 4253US9202911B2Self-aligned channel drift device and methods of making such a deviceGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 1, 2015·0 cites·20 claims
- 4353US8669616B2Method for forming N-shaped bottom stress linerGLOBALFOUNDRIES SG PTE LTD·Filed 2013·Granted Mar 11, 2014·0 cites·20 claims
- 4452US9601578B2Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)GLOBALFOUNDRIES INC·Filed 2014·Granted Mar 21, 2017·0 cites·11 claims
- 4551US12068202B2Integrated circuit device and preparation method thereofHUAWEI TECH CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·10 claims
- 4651US7995386B2Applying negative gate voltage to wordlines adjacent to wordline associated with read or verify to reduce adjacent wordline disturbSPANSION LLC·Filed 2008·Granted Aug 9, 2011·2 cites·20 claims
- 4750US9397162B1FinFET conformal junction and abrupt junction with reduced damage method and deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·0 cites·15 claims
- 4850US9397191B2Methods of making a self-aligned channel drift deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Jul 19, 2016·0 cites·20 claims
- 4949US10170315B2Semiconductor device having local buried oxideGLOBALFOUNDRIES INC·Filed 2013·Granted Jan 1, 2019·0 cites·22 claims
- 5049US9007803B2Integrated circuits with programmable electrical connections and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted Apr 14, 2015·0 cites·14 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →