Inventor · disambiguated record
Yang Pan
Also filed as: PAN YANG · PAN YANG-CHANG
167 granted patents·146 pending applications·2,884 citations·filing 1995–2025
99Inventor score
Files withPAN YANG115CHARTERED SEMICONDUCTOR MFG55LAM RES CORP55MILLENNIUM PHARM INC12INVENSENSE INC8
Top patents by PatentIndex Score
313 records- 0198US12278125B2Integrated dry processes for patterning radiation photoresist patterningLAM RES CORP·Filed 2023·Granted Apr 15, 2025·8 cites·19 claims
- 0298US12183604B2Integrated dry processes for patterning radiation photoresist patterningLAM RES CORP·Filed 2023·Granted Dec 31, 2024·9 cites·37 claims
- 0398US12094711B2Tin oxide films in semiconductor device manufacturingLAM RES CORP·Filed 2022·Granted Sep 17, 2024·5 cites·18 claims
- 0498US10706835B2Transmit beamforming of a two-dimensional array of ultrasonic transducersINVENSENSE INC·Filed 2017·Granted Jul 7, 2020·32 cites·22 claims
- 0598US10600403B2Transmit operation of an ultrasonic sensorINVENSENSE INC·Filed 2017·Granted Mar 24, 2020·37 cites·22 claims
- 0697US12105422B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2020·Granted Oct 1, 2024·13 cites·12 claims
- 0797US10546748B2Tin oxide films in semiconductor device manufacturingLAM RES CORP·Filed 2018·Granted Jan 28, 2020·25 cites·20 claims
- 0897US6300177B1Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materialsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 9, 2001·175 cites·26 claims
- 0996US12183589B2Tin oxide mandrels in patterningLAM RES CORP·Filed 2021·Granted Dec 31, 2024·3 cites·20 claims
- 1096US11322351B2Tin oxide films in semiconductor device manufacturingLAM RES CORP·Filed 2019·Granted May 3, 2022·15 cites·32 claims
- 1196US10763083B2High energy atomic layer etchingLAM RES CORP·Filed 2018·Granted Sep 1, 2020·15 cites·22 claims
- 1296US10269566B2Etching substrates using ale and selective depositionLAM RES CORP·Filed 2017·Granted Apr 23, 2019·15 cites·24 claims
- 1396US8850495B2Advertisement delivering system based on digital television system and mobile communication devicePAN YANG·Filed 2010·Granted Sep 30, 2014·47 cites·7 claims
- 1496US6461900B1Method to form a self-aligned CMOS inverter using vertical device integrationCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 8, 2002·141 cites·22 claims
- 1595US12510825B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2024·Granted Dec 30, 2025·2 cites·33 claims
- 1695US12510826B2Photoresist development with halide chemistriesLAM RES CORP·Filed 2024·Granted Dec 30, 2025·2 cites·12 claims
- 1795US11355353B2Tin oxide mandrels in patterningLAM RES CORP·Filed 2019·Granted Jun 7, 2022·15 cites·15 claims
- 1895US10685836B2Etching substrates using ALE and selective depositionLAM RES CORP·Filed 2019·Granted Jun 16, 2020·10 cites·20 claims
- 1995US9984858B2ALE smoothness: in and outside semiconductor industryLAM RES CORP·Filed 2016·Granted May 29, 2018·10 cites·20 claims
- 2095US8464289B2Delivering personalized media items to users of interactive television and personal mobile devices by using scrolling tickersPAN YANG·Filed 2012·Granted Jun 11, 2013·29 cites·20 claims
- 2195US5595919AMethod of making self-aligned halo process for reducing junction capacitanceCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Jan 21, 1997·175 cites·28 claims
- 2294US12119243B2Plasma etching chemistries of high aspect ratio features in dielectricsLAM RES CORP·Filed 2023·Granted Oct 15, 2024·1 cites·5 claims
- 2394US6747314B2Method to form a self-aligned CMOS inverter using vertical device integrationCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jun 8, 2004·93 cites·11 claims
- 2494US6313008B1Method to form a balloon shaped STI using a micro machining technique to remove heavily doped siliconCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Nov 6, 2001·90 cites·30 claims
- 2593US12062538B2Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvementLAM RES CORP·Filed 2020·Granted Aug 13, 2024·3 cites·32 claims
- 2693US9461034B2Composite group III-V and group IV transistor having a switched substrateINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Oct 4, 2016·10 cites·19 claims
- 2791US9560319B1Audiovisual information processing in videoconferencingIBM·Filed 2016·Granted Jan 31, 2017·6 cites·1 claims
- 2891US6406945B1Method for forming a transistor gate dielectric with high-K and low-K regionsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jun 18, 2002·59 cites·17 claims
- 2991US6403485B1Method to form a low parasitic capacitance pseudo-SOI CMOS deviceCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jun 11, 2002·66 cites·27 claims
- 3091US5667424ANew chemical mechanical planarization (CMP) end point detection apparatusCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·125 cites·18 claims
- 3190US12437995B2Tin oxide films in semiconductor device manufacturingLAM RES CORP·Filed 2022·Granted Oct 7, 2025·1 cites·5 claims
- 3289US11944942B1Polyether block polyamide/polydimethylsiloxane composite membrane for gas separation, and preparation method and use thereofNANJING UNIVERSITY OF TECHNOLOGY·Filed 2023·Granted Apr 2, 2024·1 cites·4 claims
- 3389US10727073B2Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfacesLAM RES CORP·Filed 2017·Granted Jul 28, 2020·5 cites·20 claims
- 3489US10304659B2Ale smoothness: in and outside semiconductor industryLAM RES CORP·Filed 2018·Granted May 28, 2019·4 cites·20 claims
- 3589US6417056B1Method to form low-overlap-capacitance transistors by forming microtrench at the gate edgeCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jul 9, 2002·51 cites·27 claims
- 3689US6306715B1Method to form smaller channel with CMOS device by isotropic etching of the gate materialsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 23, 2001·46 cites·14 claims
- 3789US5869396AMethod for forming a polycide gate electrodeCHARTERED SEMICONDUCTOR MFG·Filed 1996·Granted Feb 9, 1999·86 cites·25 claims
- 3888US11935758B2Atomic layer etching for subtractive metal etchLAM RES CORP·Filed 2020·Granted Mar 19, 2024·2 cites·7 claims
- 3988US8853605B2Intelligent solar panel arrayPAN YANG·Filed 2012·Granted Oct 7, 2014·7 cites·15 claims
- 4088US6511884B1Method to form and/or isolate vertical transistorsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jan 28, 2003·48 cites·27 claims
- 4188US6468877B1Method to form an air-gap under the edges of a gate electrode by using disposable spacer/linerCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 22, 2002·53 cites·21 claims
- 4287US12417916B2Tin oxide films in semiconductor device manufacturingLAM RES CORP·Filed 2021·Granted Sep 16, 2025·1 cites·16 claims
- 4387US9397089B2Group III-V HEMT having a selectably floating substrateINT RECTIFIER CORP·Filed 2015·Granted Jul 19, 2016·5 cites·20 claims
- 4487US8174827B2Portable tablet computing device with a low power operation mode as a media playerPAN YANG·Filed 2010·Granted May 8, 2012·9 cites·9 claims
- 4587US6436770B1Method to control the channel length of a vertical transistor by first forming channel using selective epi and source/drain using implantationCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 20, 2002·45 cites·19 claims
- 4685US10825680B2Directional deposition on patterned structuresLAM RES CORP·Filed 2018·Granted Nov 3, 2020·3 cites·21 claims
- 4785US10111882B2SYK inhibitorsGILEAD SCIENCES INC·Filed 2017·Granted Oct 30, 2018·13 cites·6 claims
- 4885US8299412B2Intelligent solar panel arrayPAN YANG·Filed 2009·Granted Oct 30, 2012·11 cites·9 claims
- 4985US7640003B1Determining location and survivability of a captive person under a disaster situation by use of a mobile devicePAN YANG·Filed 2008·Granted Dec 29, 2009·11 cites·15 claims
- 5084US11670516B2Metal-containing passivation for high aspect ratio etchLAM RES CORP·Filed 2019·Granted Jun 6, 2023·3 cites·20 claims
Showing the top 50 of 313 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →