Inventor · disambiguated record
Yasuhiro Shimamoto
Also filed as: SHIMAMOTO YASUHIRO
49 granted patents·12 pending applications·417 citations·filing 1998–2023
98Inventor score
Top patents by PatentIndex Score
61 records- 0193US7872298B2Split-gate type memory deviceRENESAS ELECTRONICS CORP·Filed 2007·Granted Jan 18, 2011·20 cites·15 claims
- 0291US7915666B2Nonvolatile semiconductor memory devices with charge injection cornerRENESAS ELECTRONICS CORP·Filed 2008·Granted Mar 29, 2011·18 cites·16 claims
- 0391US6743739B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2002·Granted Jun 1, 2004·47 cites·11 claims
- 0488US6342712B1Semiconductor storage device with ferrielectric capacitor and metal-oxide isolationHITACHI LTD·Filed 1998·Granted Jan 29, 2002·57 cites·7 claims
- 0587US7935597B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted May 3, 2011·7 cites·5 claims
- 0686US9214516B2Field effect silicon carbide transistorMINE TOSHIYUKI·Filed 2012·Granted Dec 15, 2015·8 cites·12 claims
- 0783US8390053B2Nonvolatile semiconductor device including a field effect transistor having a charge storage layer of predetermined lengthAKITA KENICHI·Filed 2008·Granted Mar 5, 2013·9 cites·11 claims
- 0883US6503791B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Jan 7, 2003·21 cites·16 claims
- 0982US7915686B2Semiconductor device and manufacturing of the sameRENESAS ELECTRONICS CORP·Filed 2006·Granted Mar 29, 2011·8 cites·6 claims
- 1081US6555429B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Apr 29, 2003·19 cites·6 claims
- 1180US8319274B2Semiconductor deviceHISAMOTO DIGH·Filed 2007·Granted Nov 27, 2012·9 cites·15 claims
- 1280US8125012B2Non-volatile memory device with a silicon nitride charge holding film having an excess of siliconMINE TOSHIYUKI·Filed 2006·Granted Feb 28, 2012·20 cites·5 claims
- 1378US7709315B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted May 4, 2010·8 cites·8 claims
- 1478US6787451B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·18 cites·18 claims
- 1576US8410543B2Semiconductor storage device and manufacturing method thereofYANAGI ITARU·Filed 2007·Granted Apr 2, 2013·6 cites·16 claims
- 1675US9029979B24h-SiC semiconductor element and semiconductor deviceHITACHI LTD·Filed 2012·Granted May 12, 2015·3 cites·11 claims
- 1774US6992022B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2004·Granted Jan 31, 2006·14 cites·8 claims
- 1874US6635913B2Semiconductor storage deviceHITACHI LTD·Filed 2001·Granted Oct 21, 2003·14 cites·4 claims
- 1973US6483143B2Semiconductor device having a capacitor structure including a self-alignment deposition preventing filmHITACHI LTD·Filed 2001·Granted Nov 19, 2002·11 cites·2 claims
- 2072US8063433B2Nonvolatile semiconductor memory deviceISHIMARU TETSUYA·Filed 2008·Granted Nov 22, 2011·5 cites·14 claims
- 2172US7687845B2Nonvolatile semiconductor storage device having an element formation region and a plurality of element isolation regions and manufacturing method of the sameRENESAS TECH CORP·Filed 2007·Granted Mar 30, 2010·5 cites·13 claims
- 2271US9318558B2MOS field effect transistorMINE TOSHIYUKI·Filed 2012·Granted Apr 19, 2016·3 cites·11 claims
- 2366US6521494B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2002·Granted Feb 18, 2003·7 cites·6 claims
- 2466US6462368B2Ferroelectric capacitor with a self-aligned diffusion barrierHITACHI LTD·Filed 2002·Granted Oct 8, 2002·13 cites·14 claims
- 2564US7759720B2Non-volatile semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Jul 20, 2010·2 cites·10 claims
- 2663US7432216B2Semiconductor device and manufacturing method thereofHITACHI LTD·Filed 2006·Granted Oct 7, 2008·2 cites·11 claims
- 2762US6740901B2Production of semiconductor integrated circuitRENESAS TECH CORP·Filed 2002·Granted May 25, 2004·8 cites·10 claims
- 2861US6380574B1Ferroelectric capacitor with a self-aligned diffusion barrierHITACHI LTD·Filed 1998·Granted Apr 30, 2002·25 cites·35 claims
- 2960US7259058B2Fabricating method of semiconductor integrated circuitsRENESAS TECHONOLOGY CORP·Filed 2001·Granted Aug 21, 2007·8 cites·29 claims
- 3059US6509246B2Production of semiconductor integrated circuitHITACHI LTD·Filed 2001·Granted Jan 21, 2003·7 cites·22 claims
- 3157US6818523B2Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layerHITACHI LTD·Filed 2003·Granted Nov 16, 2004·5 cites·4 claims
- 3255US2014327066A1Semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2014·Application pending·0 cites
- 3354US9673339B2Semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2015·Granted Jun 6, 2017·0 cites·16 claims
- 3454US9117849B2Nonvolatile semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2014·Granted Aug 25, 2015·0 cites·12 claims
- 3554US8823110B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Sep 2, 2014·0 cites·5 claims
- 3654US8816426B2Semiconductor storage device and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2013·Granted Aug 26, 2014·0 cites·25 claims
- 3753US2025235822A1Exhaust gas purification catalyst composition, exhaust gas purification catalyst and exhaust gas purification systemMITSUI MINING & SMELTING CO LTD·Filed 2023·Application pending·0 cites
- 3851US9000448B2Silicon carbide semiconductor deviceHAMAMURA HIROTAKA·Filed 2011·Granted Apr 7, 2015·1 cites·8 claims
- 3951US8796756B2Nonvolatile semiconductor device and method of manufacturing the sameAKITA KENICHI·Filed 2013·Granted Aug 5, 2014·0 cites·8 claims
- 4050US6583023B2Method for making semiconductor integrated circuitsHITACHI LTD·Filed 2002·Granted Jun 24, 2003·2 cites·23 claims
- 4150US2007001244A1Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 4249US6989304B1Method for manufacturing a ruthenium film for a semiconductor deviceRENESAS TECH CORP·Filed 2000·Granted Jan 24, 2006·3 cites·20 claims
- 4347US7256437B2Semiconductor storage device which includes a hydrogen diffusion inhibiting layerRENESAS TECH CORP·Filed 2004·Granted Aug 14, 2007·2 cites·21 claims
- 4446US11260370B2Composition for exhaust gas purification, exhaust gas purifying catalyst containing same, and exhaust gas purifying catalyst structureMITSUI MINING & SMELTING CO LTD·Filed 2019·Granted Mar 1, 2022·0 cites·7 claims
- 4546US7112833B2Semiconductor device and manufacturing method thereofHITACHI LTD·Filed 2004·Granted Sep 26, 2006·2 cites·4 claims
- 4645US2009231921A1Manufacturing method of nonvolatile semiconductor storage device and nonvolatile semiconductor storage deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 4744US2009050956A1Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 4844US2009273014A1Nonvolatile semiconductor memory deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 4943US8501558B2Semiconductor device and manufacturing method of the sameSHIMAMOTO YASUHIRO·Filed 2011·Granted Aug 6, 2013·0 cites·5 claims
- 5043US7119407B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2004·Granted Oct 10, 2006·0 cites·4 claims
Showing the top 50 of 61 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →