Inventor · disambiguated record
Yanning Sun
Also filed as: SUN YANNING
44 granted patents·8 pending applications·140 citations·filing 2007–2023
97Inventor score
Top patents by PatentIndex Score
52 records- 0197US8937299B2III-V finFETs on silicon substrateIBM·Filed 2013·Granted Jan 20, 2015·40 cites·10 claims
- 0292US9608066B1High-K spacer for extension-free CMOS devices with high mobility channel materialsIBM·Filed 2015·Granted Mar 28, 2017·8 cites·15 claims
- 0392US9437614B1Dual-semiconductor complementary metal-oxide-semiconductor deviceIBM·Filed 2015·Granted Sep 6, 2016·7 cites·7 claims
- 0488US9508640B2Multiple via structure and methodGLOBALFOUNDRIES INC·Filed 2013·Granted Nov 29, 2016·9 cites·17 claims
- 0588US7964896B2Buried channel MOSFET using III-V compound semiconductors and high k gate dielectricsIBM·Filed 2008·Granted Jun 21, 2011·13 cites·29 claims
- 0686US9553166B1Asymmetric III-V MOSFET on silicon substrateIBM·Filed 2015·Granted Jan 24, 2017·4 cites·10 claims
- 0786US9041061B2III-V device with overlapped extension regions using replacement gateIBM·Filed 2013·Granted May 26, 2015·7 cites·9 claims
- 0885US9773903B2Asymmetric III-V MOSFET on silicon substrateIBM·Filed 2016·Granted Sep 26, 2017·3 cites·18 claims
- 0985US9666684B2III-V semiconductor device having self-aligned contactsGLOBALFOUNDRIES INC·Filed 2013·Granted May 30, 2017·5 cites·8 claims
- 1085US9397161B1Reduced current leakage semiconductor deviceIBM·Filed 2015·Granted Jul 19, 2016·3 cites·20 claims
- 1185US9059267B1III-V device with overlapped extension regions using replacement gateIBM·Filed 2015·Granted Jun 16, 2015·4 cites·19 claims
- 1283US8859316B2Schottky junction si nanowire field-effect bio-sensor/molecule detectorGUO DECHAO·Filed 2010·Granted Oct 14, 2014·9 cites·15 claims
- 1382US9093532B2Overlapped III-V finFET with doped semiconductor extensionsIBM·Filed 2013·Granted Jul 28, 2015·5 cites·10 claims
- 1479US9627266B2Dual-semiconductor complementary metal-oxide-semiconductor deviceIBM·Filed 2016·Granted Apr 18, 2017·2 cites·13 claims
- 1575US9711648B1Structure and method for CMP-free III-V isolationGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 18, 2017·2 cites·16 claims
- 1675US9159822B2III-V semiconductor device having self-aligned contactsIBM·Filed 2014·Granted Oct 13, 2015·3 cites·13 claims
- 1772US9627482B2Reduced current leakage semiconductor deviceIBM·Filed 2016·Granted Apr 18, 2017·1 cites·10 claims
- 1871US9947755B2III-V MOSFET with self-aligned diffusion barrierIBM·Filed 2015·Granted Apr 17, 2018·1 cites·20 claims
- 1970US9570296B2Preparation of low defect density of III-V on Si for device fabricationIBM·Filed 2015·Granted Feb 14, 2017·1 cites·14 claims
- 2070US9041060B2III-V FET device with overlapped extension regions using gate lastIBM·Filed 2013·Granted May 26, 2015·2 cites·13 claims
- 2170US8895352B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2009·Granted Nov 25, 2014·3 cites·20 claims
- 2270US8816333B2Method to improve nucleation of materials on graphene and carbon nanotubesBABICH KATHERINA·Filed 2012·Granted Aug 26, 2014·2 cites·16 claims
- 2369US9704958B1III-V field effect transistor on a dielectric layerIBM·Filed 2015·Granted Jul 11, 2017·1 cites·15 claims
- 2469US9059288B2Overlapped III-V finfet with doped semiconductor extensionsIBM·Filed 2013·Granted Jun 16, 2015·2 cites·10 claims
- 2567US9324853B2III-V semiconductor device having self-aligned contactsIBM·Filed 2015·Granted Apr 26, 2016·1 cites·7 claims
- 2667US9287115B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2014·Granted Mar 15, 2016·1 cites·20 claims
- 2765US9508550B2Preparation of low defect density of III-V on Si for device fabricationIBM·Filed 2015·Granted Nov 29, 2016·1 cites·2 claims
- 2862US10128343B2III-V MOSFET with self-aligned diffusion barrierIBM·Filed 2018·Granted Nov 13, 2018·0 cites·7 claims
- 2962US2024319584A1Fabrication of angled mandrel structures in semiconductor deviceIBM·Filed 2023·Application pending·0 cites
- 3058US9722031B2Reduced current leakage semiconductor deviceIBM·Filed 2016·Granted Aug 1, 2017·0 cites·8 claims
- 3157US9984873B2Preparation of low defect density of III-V on Si for device fabricationIBM·Filed 2016·Granted May 29, 2018·0 cites·8 claims
- 3256US10937871B2III-V transistor device with self-aligned doped bottom barrierIBM·Filed 2018·Granted Mar 2, 2021·0 cites·11 claims
- 3356US9853109B2III-V MOSFET with self-aligned diffusion barrierIBM·Filed 2016·Granted Dec 26, 2017·0 cites·20 claims
- 3456US9087775B2Planar semiconductor growth on III-V materialIBM·Filed 2013·Granted Jul 21, 2015·0 cites·15 claims
- 3555US10115833B2Self-aligned heterojunction field effect transistorIBM·Filed 2017·Granted Oct 30, 2018·0 cites·20 claims
- 3655US9812323B2Low external resistance channels in III-V semiconductor devicesIBM·Filed 2014·Granted Nov 7, 2017·0 cites·3 claims
- 3755US9337281B2Planar semiconductor growth on III-V materialGLOBALFOUNDRIES INC·Filed 2015·Granted May 10, 2016·0 cites·20 claims
- 3854US10622207B2Low external resistance channels in III-V semiconductor devicesIBM·Filed 2017·Granted Apr 14, 2020·0 cites·17 claims
- 3954US2015048423A1Semiconductor device having a iii-v crystalline compound material selectively grown on the bottom of a space formed in a single element substrate.IBM·Filed 2013·Application pending·0 cites
- 4054US2015048422A1A method for forming a crystalline compound iii-v material on a single element substrateIBM·Filed 2013·Application pending·0 cites
- 4154US2014220766A1Planar semiconductor growth on iii-v materialIBM·Filed 2013·Application pending·0 cites
- 4253US10014377B2III-V field effect transistor on a dielectric layerIBM·Filed 2017·Granted Jul 3, 2018·0 cites·20 claims
- 4353US9882021B2Planar III-V field effect transistor (FET) on dielectric layerIBM·Filed 2016·Granted Jan 30, 2018·0 cites·13 claims
- 4451US9064946B1III-V FET device with overlapped extension regions using gate lastIBM·Filed 2015·Granted Jun 23, 2015·0 cites·17 claims
- 4550US9741871B2Self-aligned heterojunction field effect transistorIBM·Filed 2015·Granted Aug 22, 2017·0 cites·20 claims
- 4649US9941363B2III-V transistor device with self-aligned doped bottom barrierIBM·Filed 2015·Granted Apr 10, 2018·0 cites·20 claims
- 4749US9793405B2Semiconductor lateral sidewall growth from a semiconductor pillarIBM·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 4849US2015255281A1Silicon substrate preparation for selective iii-v epitaxyIBM·Filed 2015·Application pending·0 cites
- 4948US2014264607A1Iii-v finfets on silicon substrateIBM·Filed 2013·Application pending·0 cites
- 5048US2008001173A1BURIED CHANNEL MOSFET USING III-V COMPOUND SEMICONDUCTORS AND HIGH k GATE DIELECTRICSIBM·Filed 2007·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Yanning Sun files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →