Inventor · disambiguated record
Ya-Yi Tsai
Also filed as: TSAI YA-YI
36 granted patents·19 pending applications·39 citations·filing 2018–2025
96Inventor score
Top patents by PatentIndex Score
55 records- 0197US11251284B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·4 cites·20 claims
- 0296US11996472B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 0394US11855179B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 0494US11527443B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 0594US10535654B2Cut metal gate with slanted sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·11 cites·20 claims
- 0693US11600718B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·20 claims
- 0788US11437287B2Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·2 cites·18 claims
- 0888US10714347B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 0987US12002715B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 4, 2024·2 cites·20 claims
- 1087US10460994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·3 cites·20 claims
- 1186US12363994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1286US12261172B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 25, 2025·1 cites·20 claims
- 1385US11791403B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·1 cites·14 claims
- 1485US11508582B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·1 cites·21 claims
- 1583US12382650B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 1683US2025318232A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1782US12363976B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1882US12206011B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 1982US10879074B2Method of forming semiconductor device and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 29, 2020·1 cites·20 claims
- 2082US2025324748A1Semiconductor devices with gate isolation structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2182US2025301771A1Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2282US2024363735A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2382US2024421211A1Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2482US2024371704A1Semiconductor Device with Cut Metal Gate and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2581US12389664B2Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
- 2681US11990341B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2781US11915980B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 2881US11264287B2Semiconductor device with cut metal gate and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 2980US12112990B2Semiconductor device with cut metal gate and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 3080US12046663B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 3179US12034063B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 3279US2025338543A1Isolation structures for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3377US12402404B2Semiconductor devices with interface between gate isolation structure and dummy channel having curved profile and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 3476US2024322017A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3575US11894277B2Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 3675US11757019B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
- 3775US11652005B2Semiconductor device with cut metal gate and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·0 cites·20 claims
- 3874US11626510B2Fin Field-Effect Transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 11, 2023·0 cites·20 claims
- 3973US11616061B2Cut metal gate with slanted sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 28, 2023·1 cites·19 claims
- 4073US2024387532A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4172US2024387280A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4271US2025081512A1Isolation structures for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4370US11233139B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·10 claims
- 4469US11715736B2Semiconductor devices with gate isolation structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·20 claims
- 4568US2025212437A1Nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4667US10943828B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 4757US10672613B2Method of forming semiconductor structure and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·20 claims
- 4854US2024387283A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUTOR MFG COMPANY LIMITED·Filed 2024·Application pending·0 cites
- 4953US2025022715A1Plasma etching processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5053US2022384270A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
Showing the top 50 of 55 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →