Inventor · disambiguated record
Yao-Jhan Wang
Also filed as: WANG YAO-JHAN
22 granted patents·17 pending applications·26 citations·filing 2017–2024
92Inventor score
Top patents by PatentIndex Score
39 records- 0194US10211314B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 19, 2019·7 cites·6 claims
- 0291US10037915B1Fabricating method of a semiconductor structure with an epitaxial layerUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 31, 2018·8 cites·9 claims
- 0390US10249729B1Method for fabricating metal replacement gate semiconductor device using dummy gate and composite spacer structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 2, 2019·7 cites·7 claims
- 0484US12501681B2Semiconductor device and method for fabricating the sameMARLIN SEMICONDUCTOR LTD·Filed 2024·Granted Dec 16, 2025·0 cites·5 claims
- 0577US11901437B2Semiconductor device and method for fabricating the sameMARLIN SEMICONDUCTOR LTD·Filed 2022·Granted Feb 13, 2024·0 cites·9 claims
- 0673US11355619B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jun 7, 2022·0 cites·9 claims
- 0773US10777657B2Metal gate transistor with a stacked double sidewall spacer structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Sep 15, 2020·1 cites·10 claims
- 0873US10700163B2Semiconductor device including conductive structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jun 30, 2020·1 cites·8 claims
- 0973US2023352565A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1072US10608113B1Semiconductor structure and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 31, 2020·1 cites·19 claims
- 1169US11881518B2Metal gate structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 23, 2024·0 cites·5 claims
- 1269US11742412B2Method for fabricating a metal gate transistor with a stacked double sidewall spacer structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted Aug 29, 2023·0 cites·1 claims
- 1369US10217866B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 26, 2019·1 cites·11 claims
- 1468US11929418B2Metal gate structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Mar 12, 2024·0 cites·17 claims
- 1565US10651290B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted May 12, 2020·0 cites·10 claims
- 1664US11569235B2Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jan 31, 2023·0 cites·9 claims
- 1762US10892365B2Fin field effect transistor having crystalline titanium germanosilicide stressor layerUNITED MICROELECTRONICS CORP·Filed 2020·Granted Jan 12, 2021·0 cites·8 claims
- 1860US10957762B2Manufacturing method of semiconductor device including conductive structureUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 23, 2021·0 cites·9 claims
- 1960US2025142815A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 2058US11205705B2Metal gate structure and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 21, 2021·0 cites·7 claims
- 2158US2025279359A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2258US2025212426A1Metal-insulator-metal capacitor structureUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2357US10868011B2Semiconductor device and method of manufacturing the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Dec 15, 2020·0 cites·9 claims
- 2457US10446682B2Method of forming semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Oct 15, 2019·0 cites·8 claims
- 2557US2025240985A1Semiconductor structure with a deep trench capacitor structures and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2657US2025176208A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 2755US2025063803A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 2855US2025072015A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 2955US2024243124A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 3054US2025241027A1Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 3154US2024379670A1Semiconductor device and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 3251US2024071818A1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 3351US2025015186A1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 3450US2024363430A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 3550US2024413017A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 3649US10686079B1Fin field effect transistor structure with particular gate appearanceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 16, 2020·0 cites·14 claims
- 3743US10211107B1Method of fabricating fins including removing dummy fins after fluorocarbon flush step and oxygen clean stepUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 19, 2019·0 cites·6 claims
- 3840US2020194058A1Layout pattern for sram and manufacturing methods thereofUNITED MICROELECTRONICS CORP·Filed 2018·Application pending·0 cites
- 3937US2019103492A1Method for fabricating semiconductor device involving forming epitaxial materialUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →