Inventor · disambiguated record
Yen-Ming Chen
Also filed as: CHEN YEN-MING
303 granted patents·84 pending applications·2,293 citations·filing 1985–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD282TAIWAN SEMICONDUCTOR MFG47UNITED MICROELECTRONICS CORP6CHANT SINCERE CO LTD5CHEN YEN-MING5
Top patents by PatentIndex Score
387 records- 0199US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0298US11616142B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·4 cites·20 claims
- 0398US11189705B2Methods of reducing parasitic capacitance in multi-gate field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·7 cites·20 claims
- 0498US10522642B2Semiconductor device with air-spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·30 cites·20 claims
- 0598US10062784B1Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·31 cites·20 claims
- 0698US9570580B1Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·23 cites·20 claims
- 0797US11855097B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0897US11856743B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 0997US11631746B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 18, 2023·3 cites·20 claims
- 1097US9997631B2Methods for reducing contact resistance in semiconductors manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·31 cites·20 claims
- 1197US9601497B1Static random access memory and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·28 cites·20 claims
- 1297US9275905B1Method of forming semiconductor structure with anti-punch through structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 1, 2016·26 cites·20 claims
- 1397US8236659B2Source and drain feature profile for improving device performance and method of manufacturing sameTSAI MING-HUAN·Filed 2010·Granted Aug 7, 2012·41 cites·7 claims
- 1497US6743660B2Method of making a wafer level chip scale packageTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 1, 2004·110 cites·20 claims
- 1596US11984489B2Air spacer for a gate structure of a transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
- 1696US11862713B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 1796US10276691B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
- 1896US10217815B1Integrated circuit device with source/drain barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 26, 2019·10 cites·20 claims
- 1996US6482669B1Colors only process to reduce package yield lossTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Nov 19, 2002·81 cites·13 claims
- 2096US6426281B1Method to form bump in bumping technologyTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 30, 2002·147 cites·17 claims
- 2195US11195951B2Semiconductor device with self-aligned wavy contact profile and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·8 cites·20 claims
- 2295US10483266B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·9 cites·20 claims
- 2395US10153280B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·7 cites·19 claims
- 2495US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
- 2595US8487692B1Voltage generator with adjustable slopeCHEN CHIH-NING·Filed 2012·Granted Jul 16, 2013·19 cites·19 claims
- 2694US11705384B2Through vias of semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
- 2794US10529725B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·6 cites·20 claims
- 2894US8779526B2Semiconductor deviceHSU CHUN-WEI·Filed 2011·Granted Jul 15, 2014·20 cites·11 claims
- 2993US11901408B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 3093US11855207B2FinFET structure and method with reduced fin bucklingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 3193US11456295B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
- 3293US11404324B2Fin isolation structures of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
- 3393US11145564B2Multi-layer passivation structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·9 cites·20 claims
- 3493US10867870B1Semiconductor device with funnel shape spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·5 cites·20 claims
- 3593US10658184B2Pattern fidelity enhancement with directional patterning technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·7 cites·12 claims
- 3693US10418363B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·5 cites·20 claims
- 3793US6605524B1Bumping process to increase bump height and to create a more robust bump structureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 12, 2003·78 cites·24 claims
- 3892US11437331B2Chip structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·6 cites·20 claims
- 3992US11342408B2Metal-insulator-metal structure and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
- 4092US10985167B2Flexible merge scheme for source/drain epitaxy regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·4 cites·20 claims
- 4192US10529803B2Semiconductor device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 7, 2020·7 cites·20 claims
- 4292US10510762B2Source and drain formation technique for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·9 cites·20 claims
- 4392US10283624B1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·7 cites·20 claims
- 4492US8614132B2Integrated circuit device with well controlled surface proximity and method of manufacturing sameTSAI MING-HUAN·Filed 2011·Granted Dec 24, 2013·10 cites·19 claims
- 4592US8404544B1Fabrication methods of integrated semiconductor structureYIN JIN-MU·Filed 2012·Granted Mar 26, 2013·25 cites·20 claims
- 4691US11728223B2Semiconductor device and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 15, 2023·4 cites·20 claims
- 4791US11728375B2Metal-insulator-metal (MIM) capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·1 cites·20 claims
- 4891US11716910B2MRAM structure for balanced loadingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 1, 2023·2 cites·20 claims
- 4991US11670608B2Prevention of metal pad corrosion due to exposure to halogenTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 6, 2023·2 cites·20 claims
- 5091US10923565B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·5 cites·20 claims
Showing the top 50 of 387 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →