Inventor · disambiguated record
Yen-Lin Ding
Also filed as: DING YEN-LIN
9 granted patents·2 pending applications·323 citations·filing 1998–2001
90Inventor score
Top patents by PatentIndex Score
11 records- 0195US6171909B1Method for forming a stacked gateUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Jan 9, 2001·141 cites·9 claims
- 0288US6153472AMethod for fabricating a flash memoryUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Nov 28, 2000·65 cites·20 claims
- 0383US6306720B1Method for forming capacitor of mixed-mode deviceUNITED MICROELECTRONICS CORP·Filed 2000·Granted Oct 23, 2001·39 cites·8 claims
- 0465US6214667B1Method for fabricating a flash memoryUNITED MICROELECTRONICS CORP·Filed 1999·Granted Apr 10, 2001·21 cites·21 claims
- 0562US6048768AMethod of manufacturing flash memoryUNITED SEMICONDUCTOR COPR·Filed 1999·Granted Apr 11, 2000·22 cites·16 claims
- 0655US6294812B1High density flash memory cellUNITED MICROELECTRONICS CORP·Filed 1999·Granted Sep 25, 2001·13 cites·22 claims
- 0753US6114204AMethod of fabricating high density flash memory with self-aligned tunneling windowUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Sep 5, 2000·12 cites·15 claims
- 0838US6001686AMethod of fabricating a capacitor over a bit line of a DRAMUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Dec 14, 1999·6 cites·16 claims
- 0934US6143603AMethod of manufacturing bottom electrode of a capacitorUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Nov 7, 2000·4 cites·12 claims
- 1031US2002182824A1Method of forming shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 2001·Application pending·0 cites
- 1128US2002045324A1Method for forming shallow trench isolationFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →