Inventor · disambiguated record
Yee-Chia Yeo
Also filed as: YEO YEE-CHIA
380 granted patents·166 pending applications·5,941 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD423TAIWAN SEMICONDUCTOR MFG98KO CHIH-HSIN5YEO YEE-CHIA5CHARTERED SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
546 records- 0199US9853101B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·151 cites·20 claims
- 0299US9660033B1Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·58 cites·20 claims
- 0399US9564489B2Multiple gate field-effect transistors having oxygen-scavenged gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·297 cites·20 claims
- 0499US6855990B2Strained-channel multiple-gate transistorTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 15, 2005·272 cites·42 claims
- 0599US6492216B1Method of forming a transistor with a strained channelTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 10, 2002·452 cites·32 claims
- 0698US10290546B2Threshold voltage adjustment for a gate-all-around semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·131 cites·20 claims
- 0798US10134640B1Semiconductor device structure with semiconductor wireTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·42 cites·20 claims
- 0898US9614086B1Conformal source and drain contacts for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·27 cites·20 claims
- 0998US9570580B1Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·23 cites·20 claims
- 1098US7452778B2Semiconductor nano-wire devices and methods of fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 18, 2008·104 cites·21 claims
- 1198US7442967B2Strained channel complementary field-effect transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Oct 28, 2008·91 cites·7 claims
- 1298US7112495B2Structure and method of a strained channel transistor and a second semiconductor component in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 26, 2006·270 cites·71 claims
- 1398US6902962B2Silicon-on-insulator chip with multiple crystal orientationsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jun 7, 2005·139 cites·49 claims
- 1498US6867433B2Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 15, 2005·321 cites·69 claims
- 1598US6855606B2Semiconductor nano-rod devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 15, 2005·182 cites·12 claims
- 1697US11978677B2Wafer positioning method and apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·3 cites·20 claims
- 1797US11848361B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
- 1897US11456383B2Semiconductor device having a contact plug with an air gap spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·7 cites·20 claims
- 1997US11043570B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·4 cites·20 claims
- 2097US10037912B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·15 cites·20 claims
- 2197US9768278B1Reduction of Fin loss in the formation of FinFETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·18 cites·20 claims
- 2297US9716146B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 25, 2017·12 cites·20 claims
- 2397US9472669B1Semiconductor Fin FET device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·24 cites·20 claims
- 2497US7180134B2Methods and structures for planar and multiple-gate transistors formed on SOITAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 20, 2007·131 cites·10 claims
- 2597US7074656B2Doping of semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 11, 2006·128 cites·59 claims
- 2697US7052964B2Strained channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 30, 2006·48 cites·46 claims
- 2797US6844238B2Multiple-gate transistors with improved gate controlTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jan 18, 2005·135 cites·31 claims
- 2897US6720619B1Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devicesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·172 cites·16 claims
- 2997US6703271B2Complementary metal oxide semiconductor transistor technology using selective epitaxy of a strained silicon germanium layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 9, 2004·125 cites·12 claims
- 3096US11908708B2Laser de-bonding carriers and composite carriers thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·3 cites·20 claims
- 3196US11901235B2Ion implantation for nano-FETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·2 cites·20 claims
- 3296US11581425B2Method for manufacturing semiconductor structure with enlarged volumes of source-drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 3396US10164033B2Conformal source and drain contacts for multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·12 cites·20 claims
- 3496US10164016B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·19 claims
- 3596US10134843B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·9 cites·20 claims
- 3696US10008497B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 26, 2018·13 cites·20 claims
- 3796US9620627B1Field-effect transistors having black phosphorus channel and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·11 cites·20 claims
- 3896US7888201B2Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 15, 2011·45 cites·20 claims
- 3996US7368334B2Silicon-on-insulator chip with multiple crystal orientationsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 6, 2008·40 cites·20 claims
- 4096US7262086B2Contacts to semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 28, 2007·34 cites·44 claims
- 4196US6921913B2Strained-channel transistor structure with lattice-mismatched zoneTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 26, 2005·104 cites·32 claims
- 4296US6882025B2Strained-channel transistor and methods of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 19, 2005·111 cites·66 claims
- 4395US12080759B2Transistor source/drain regions and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·2 cites·20 claims
- 4495US11257911B2Sacrificial layer for semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 4595US10153280B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·7 cites·19 claims
- 4695US10134915B22-D material transistor with vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·9 cites·21 claims
- 4795US9899258B1Metal liner overhang reduction and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·20 cites·20 claims
- 4895US9564493B2Devices having a semiconductor material that is semimetal in bulk and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·8 cites·20 claims
- 4995US7172943B2Multiple-gate transistors formed on bulk substratesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 6, 2007·91 cites·36 claims
- 5095US7105894B2Contacts to semiconductor fin devicesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 12, 2006·89 cites·13 claims
Showing the top 50 of 546 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →