Inventor · disambiguated record
Yexiao Yu
Also filed as: YU YEXIAO
20 granted patents·8 pending applications·1 citations·filing 2021–2025
87Inventor score
Top patents by PatentIndex Score
28 records- 0180US12362192B2Method for manufacturing semiconductor structure, and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 15, 2025·1 cites·16 claims
- 0261US2025071977A1Semiconductor structure and method for fabricating sameCXMT CORP·Filed 2024·Application pending·0 cites
- 0360US12408327B2Semiconductor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2023·Granted Sep 2, 2025·0 cites·16 claims
- 0460US2025081434A1Semiconductor structure and preparation method thereforCXMT CORP·Filed 2024·Application pending·0 cites
- 0560US2025338481A1Memory device, and semiconductor structure and method for manufacturing sameCXMT CORP·Filed 2025·Application pending·0 cites
- 0659US12495536B2Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 9, 2025·0 cites·12 claims
- 0758US12453081B2Method of forming a bit line structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 21, 2025·0 cites·8 claims
- 0858US12108593B2Method for preparing semiconductor structure using a first mask comprises a grooveCHANGXIN MEMORY TECH INC·Filed 2022·Granted Oct 1, 2024·0 cites·12 claims
- 0957US12501609B2Memory device and method for manufacturing memory deviceCHANGXIN MEMORY TECH INC·Filed 2023·Granted Dec 16, 2025·0 cites·17 claims
- 1056US12347685B2Semiconductor structure and method for fabricating sameCHANGXIN MEMORY TECH INC·Filed 2023·Granted Jul 1, 2025·0 cites·16 claims
- 1156US11871564B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 1255US11956946B2Method for forming a semiconductor memory structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 9, 2024·0 cites·13 claims
- 1354US2023116155A1Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 1453US12389659B2Semiconductor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 12, 2025·0 cites·7 claims
- 1553US12341010B2Preparation method for semiconductor structure and sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·0 cites·17 claims
- 1653US12213305B2Manufacturing method of semiconductor structure with epitaxial layer forming extension portionCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 28, 2025·0 cites·14 claims
- 1753US12160987B2Method for fabricating memory and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 3, 2024·0 cites·15 claims
- 1853US12096620B2Method for manufacturing memory and memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Sep 17, 2024·0 cites·15 claims
- 1952US12193209B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 7, 2025·0 cites·11 claims
- 2052US12119226B2Method for manufacturing mask structure, semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 15, 2024·0 cites·8 claims
- 2152US11984398B2Semiconductor structure and manufacturing method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·15 claims
- 2252US2023164983A1Method for preparing semiconductor structure, semiconductor structure and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 2351US11963346B2Semiconductor structure and preparation method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted Apr 16, 2024·0 cites·16 claims
- 2450US12106817B2Method for manufacturing a memoryCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 2550US11942522B2Method for manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Mar 26, 2024·0 cites·16 claims
- 2649US2023013653A1Memory device and method for forming sameCHANGXING MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 2746US2022302125A1Semiconductor memory and forming method thereofCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 2845US2023016088A1Semiconductor structure and fabrication method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →