Inventor · disambiguated record
Yi-Hsiu Chen
Also filed as: CHEN YI-HSIU · CHEN YI-HSIU E
48 granted patents·18 pending applications·1,008 citations·filing 2008–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD41WINBOND ELECTRONICS CORP8EON SILICON SOLUTIONS INC3UNITED MICROELECTRONICS CORP3APPLE INC2
Top patents by PatentIndex Score
66 records- 0198US11437480B2Forming a cavity with a wet etch for backside contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·20 claims
- 0298US9425126B2Dummy structure for chip-on-wafer-on-substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·883 cites·20 claims
- 0396US11942527B2Forming a cavity with a wet etch for backside contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0496US9893028B2Bond structures and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 13, 2018·13 cites·20 claims
- 0595US11817361B2Passivation structure with planar top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·2 cites·20 claims
- 0695US10163623B1Etch method with surface modification treatment for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·14 cites·20 claims
- 0794US10636842B1Resistive random access memory and method for forming the sameWINBOND ELECTRONICS CORP·Filed 2019·Granted Apr 28, 2020·13 cites·20 claims
- 0891US10879214B2Die stack structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 29, 2020·8 cites·19 claims
- 0989US11699694B2Method of manufacturing semiconductor package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 1088US10867943B2Die structure, die stack structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·6 cites·20 claims
- 1188US9583465B1Three dimensional integrated circuit structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·6 cites·18 claims
- 1287US12272733B2Transistor device for source/drain backside contact and method of forming cavityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
- 1387US11502131B2Resistive random access memory device and manufacturing method thereofWINBOND ELECTRONICS CORP·Filed 2020·Granted Nov 15, 2022·2 cites·15 claims
- 1487US10269741B2Bond structures and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·3 cites·20 claims
- 1586US10163709B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·4 cites·20 claims
- 1686US8803322B2Through substrate via structures and methods of forming the sameYANG KU-FENG·Filed 2011·Granted Aug 12, 2014·7 cites·20 claims
- 1785US10665582B2Method of manufacturing semiconductor package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·3 cites·20 claims
- 1884US9842823B2Chip-stacking apparatus having a transport device configured to transport a chip onto a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 12, 2017·7 cites·19 claims
- 1984US9601410B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·4 cites·20 claims
- 2083US9263382B2Through substrate via structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 16, 2016·5 cites·20 claims
- 2183US2025234583A1Forming a cavity with a wet etch for backside contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2281US12218022B2Passivation structure with planar top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2381US10600732B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Mar 24, 2020·3 cites·20 claims
- 2481US10510604B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·2 cites·20 claims
- 2581US9754831B2Dummy structure for chip-on-wafer-on-substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 5, 2017·3 cites·20 claims
- 2681US2025140627A1Passivation structure with planar top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2780US2025359287A1Self-aligned patterning layer for metal gate formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2880US2025357138A1Formation of self-assembled monolayer for selective etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2979US9972779B2Resistive random access memoryWINBOND ELECTRONICS CORP·Filed 2015·Granted May 15, 2018·3 cites·8 claims
- 3077US10269761B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·2 cites·20 claims
- 3176US10593877B2Resistive random access memoryWINBOND ELECTRONICS CORP·Filed 2018·Granted Mar 17, 2020·2 cites·18 claims
- 3275US9418933B2Through-substrate via formation with improved topography controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·2 cites·19 claims
- 3375US2024347506A1Method of forming package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3473US2025349641A1Integrated circuit packages and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3571US12489016B2Integrated circuit packages and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 3671US12063796B2Manufacturing method of resistive random access memory deviceWINBOND ELECTRONICS CORP·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 3770US12417924B2Formation of self-assembled monolayer for selective etching processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 3869US11043481B2Method of manufacturing semiconductor package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·0 cites·20 claims
- 3969US10672737B2Three-dimensional integrated circuit structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·1 cites·20 claims
- 4068US9960349B2Resistive random-access memory structure and method for fabricating the sameWINBOND ELECTRONICS CORP·Filed 2017·Granted May 1, 2018·1 cites·16 claims
- 4166US12051672B2Package structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 30, 2024·0 cites·20 claims
- 4266US2025087543A1Integrated circuit packages and methodsTAIWAN SEMICONDUCTOR MFG CO LTD HSINCHU·Filed 2024·Application pending·0 cites
- 4364US10510699B2Bond structures and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·0 cites·20 claims
- 4463US12506029B2Gap filling method in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 23, 2025·0 cites·20 claims
- 4563US10170396B2Through via structure extending to metallization layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 1, 2019·1 cites·20 claims
- 4662US11688639B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 27, 2023·0 cites·20 claims
- 4760US2025275196A1Selective deposition method and semiconductor structure manufactured using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4860US2024333490A1Physical unclonable function code generating apparatus and methodWINBOND ELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 4959US12015413B2Coding for pulse amplitude modulation with an odd number of output levelsAPPLE INC·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 5059US2025220945A1Selective deposition of gate dielectric layer of semiconductor device and the semiconductor device manufactured therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 66 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →