Inventor · disambiguated record

Ying-Liang Chuang

Also filed as: CHUANG YING-LIANG

42 granted patents·23 pending applications·58 citations·filing 2011–2025

96Inventor score

Technology areasH10P H10D H10W

Files withTAIWAN SEMICONDUCTOR MFG CO LTD64 LAM RES CORP1

Top patents by PatentIndex Score

65 records

0197US11114436B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 7, 2021·4 cites·20 claims
0296US11189714B2Gate stack structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·3 cites·20 claims
0394US10283503B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·8 cites·20 claims
0494US10283417B1Self-protective layer formed on high-k dielectric layers with different materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·10 cites·20 claims
0594US10170317B1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·7 cites·20 claims
0692US10811320B2Footing removal in cut-metal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·6 cites·20 claims
0791US10490410B2Self-protective layer formed on high-K dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·4 cites·20 claims
0889US9449841B2Methods and systems for chemical mechanical polish and cleanTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 20, 2016·8 cites·19 claims
0987US10748898B2Metal gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·20 claims
1085US2025366051A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1184US12376372B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
1284US12376326B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
1384US12255107B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
1484US11854903B2Footing removal in cut-metal processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·1 cites·20 claims
1584US10361133B2High-K metal gate and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 23, 2019·3 cites·20 claims
1683US11923428B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·0 cites·20 claims
1783US2024203740A1Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1881US2024186390A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1981US2025301765A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2080US11658225B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 23, 2023·0 cites·20 claims
2177US12015077B2Metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
2276US11887896B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
2376US2025113588A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2476US2025241001A1Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2575US11810978B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
2675US2025357140A1Anisotropic wet etching in patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2775US2025194225A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2873US12051626B2Fin Field-Effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
2973US11923201B2Self-protective layer formed on high-K dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
3073US2025344486A1Method for modifying metal-including material in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3173US2025311335A1Semiconductor devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3272US12183637B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
3372US11404552B2Fin Field-Effect Transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·0 cites·19 claims
3470US11257924B2Metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
3570US11114347B2Self-protective layer formed on high-k dielectric layers with different materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 7, 2021·1 cites·20 claims
3669US2023386898A1Etch method for interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3768US11854870B2Etch method for interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·16 claims
3868US2023420543A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
3967US12363966B2Semiconductor devices and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
4067US10937656B2Self-protective layer formed on high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 2, 2021·0 cites·20 claims
4167US2022376079A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
4265US11715670B2FIN field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·0 cites·18 claims
4364US11031500B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
4464US10755934B2Systems and methods for chemical mechanical polish and cleanTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
4563US12389661B2Method for modifying metal-including material in semiconductor manufacturing processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
4662US10720516B2Gate stack structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 21, 2020·0 cites·20 claims
4761US12490497B2Metal gate patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
4861US11031302B2High-k metal gate and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
4961US2023420265A1Anisotropic wet etching in patterningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
5060US10541317B2Method of forming a metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·0 cites·20 claims

Showing the top 50 of 65 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →