Inventor · disambiguated record
Yiming Huai
Also filed as: HUAI YIMING
190 granted patents·20 pending applications·13,935 citations·filing 1997–2025
99Inventor score
Top patents by PatentIndex Score
210 records- 0199US9780300B2Magnetic memory element with composite perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Oct 3, 2017·36 cites·22 claims
- 0299US9608038B2Magnetic tunnel junction (MTJ) memory element having tri-layer perpendicular reference layerAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Mar 28, 2017·40 cites·20 claims
- 0399US9166154B2MTJ stack and bottom electrode patterning process with ion beam etching using a single maskAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Oct 20, 2015·47 cites·14 claims
- 0499US8883520B2Redeposition control in MRAM fabrication processSATOH KIMIHIRO·Filed 2012·Granted Nov 11, 2014·72 cites·4 claims
- 0599US8574928B2MRAM fabrication method with sidewall cleaningSATOH KIMIHIRO·Filed 2012·Granted Nov 5, 2013·131 cites·14 claims
- 0699US7576956B2Magnetic tunnel junction having diffusion stop layerGRANDIS INC·Filed 2005·Granted Aug 18, 2009·215 cites·44 claims
- 0799US7518835B2Magnetic elements having a bias field and magnetic memory devices using the magnetic elementsGRANDIS INC·Filed 2005·Granted Apr 14, 2009·128 cites·23 claims
- 0899US7515457B2Current driven memory cells having enhanced current and enhanced current symmetryGRANDIS INC·Filed 2006·Granted Apr 7, 2009·224 cites·18 claims
- 0999US7489541B2Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elementsGRANDIS INC·Filed 2005·Granted Feb 10, 2009·157 cites·33 claims
- 1099US7286395B2Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cellsGRANDIS INC·Filed 2005·Granted Oct 23, 2007·196 cites·40 claims
- 1199US7272034B1Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cellsGRANDIS INC·Filed 2005·Granted Sep 18, 2007·243 cites·37 claims
- 1299US7272035B1Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cellsGRANDIS INC·Filed 2005·Granted Sep 18, 2007·251 cites·11 claims
- 1399US7245462B2Magnetoresistive element having reduced spin transfer induced noiseGRANDIS INC·Filed 2004·Granted Jul 17, 2007·152 cites·13 claims
- 1499US7242048B2Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elementsGRANDIS INC·Filed 2006·Granted Jul 10, 2007·110 cites·16 claims
- 1599US7230845B1Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devicesGRANDIS INC·Filed 2005·Granted Jun 12, 2007·158 cites·29 claims
- 1699US7227773B1Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic elementGRANDIS INC·Filed 2005·Granted Jun 5, 2007·154 cites·30 claims
- 1799US7190611B2Spin-transfer multilayer stack containing magnetic layers with resettable magnetizationGRANDIS INC·Filed 2003·Granted Mar 13, 2007·283 cites·63 claims
- 1899US7126202B2Spin scattering and heat assisted switching of a magnetic elementGRANDIS INC·Filed 2004·Granted Oct 24, 2006·163 cites·19 claims
- 1999US6992359B2Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetizationGRANDIS INC·Filed 2004·Granted Jan 31, 2006·425 cites·33 claims
- 2099US6985385B2Magnetic memory element utilizing spin transfer switching and storing multiple bitsGRANDIS INC·Filed 2003·Granted Jan 10, 2006·331 cites·56 claims
- 2199US6967863B2Perpendicular magnetization magnetic element utilizing spin transferGRANDIS INC·Filed 2004·Granted Nov 22, 2005·309 cites·40 claims
- 2299US6958927B1Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted Oct 25, 2005·287 cites·108 claims
- 2399US6888742B1Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted May 3, 2005·303 cites·42 claims
- 2499US6838740B2Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted Jan 4, 2005·288 cites·43 claims
- 2599US6714444B2Magnetic element utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2002·Granted Mar 30, 2004·470 cites·21 claims
- 2698US11785784B2Multilayered seed for perpendicular magnetic structure including an oxide layerAVALANCHE TECHNOLOGY INC·Filed 2022·Granted Oct 10, 2023·2 cites·12 claims
- 2798US9793319B2Multilayered seed structure for perpendicular MTJ memory elementAVALANCHE TECHNOLOGY INC·Filed 2016·Granted Oct 17, 2017·46 cites·20 claims
- 2898US9166143B1Magnetic random access memory with multiple free layersAVALANCHE TECHNOLOGY INC·Filed 2014·Granted Oct 20, 2015·41 cites·14 claims
- 2998US9070869B2Fabrication method for high-density MRAM using thin hard maskAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·29 cites·19 claims
- 3098US9070855B2Magnetic random access memory having perpendicular enhancement layerAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Jun 30, 2015·40 cites·24 claims
- 3198US8975089B1Method for forming MTJ memory elementAVALANCHE TECHNOLOGY INC·Filed 2013·Granted Mar 10, 2015·40 cites·20 claims
- 3298US8772888B2MTJ MRAM with stud patterningJUNG DONG HA·Filed 2012·Granted Jul 8, 2014·224 cites·4 claims
- 3398US7531882B2Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetizationGRANDIS INC·Filed 2005·Granted May 12, 2009·42 cites·14 claims
- 3498US7430135B2Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current densityGRANDIS INC·Filed 2005·Granted Sep 30, 2008·218 cites·35 claims
- 3598US7369427B2Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elementsGRANDIS INC·Filed 2004·Granted May 6, 2008·201 cites·26 claims
- 3698US7345912B2Method and system for providing a magnetic memory structure utilizing spin transferGRANDIS INC·Filed 2006·Granted Mar 18, 2008·236 cites·17 claims
- 3798US7289356B2Fast magnetic memory devices utilizing spin transfer and magnetic elements used thereinGRANDIS INC·Filed 2005·Granted Oct 30, 2007·193 cites·49 claims
- 3898US7284316B1Method for forming a hard bias structure in a magnetoresistive sensorWESTERN DIGITAL FREMONT LLC·Filed 2004·Granted Oct 23, 2007·162 cites·36 claims
- 3998US7282755B2Stress assisted current driven switching for magnetic memory applicationsGRANDIS INC·Filed 2003·Granted Oct 16, 2007·180 cites·23 claims
- 4098US7241631B2MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elementsGRANDIS INC·Filed 2004·Granted Jul 10, 2007·189 cites·63 claims
- 4198US7242045B2Spin transfer magnetic element having low saturation magnetization free layersGRANDIS INC·Filed 2004·Granted Jul 10, 2007·220 cites·46 claims
- 4298US7233039B2Spin transfer magnetic elements with spin depolarization layersGRANDIS INC·Filed 2004·Granted Jun 19, 2007·171 cites·21 claims
- 4398US7110287B2Method and system for providing heat assisted switching of a magnetic element utilizing spin transferGRANDIS INC·Filed 2004·Granted Sep 19, 2006·193 cites·35 claims
- 4498US7106624B2Magnetic element utilizing spin transfer and an mram device using the magnetic elementGRANDIS INC·Filed 2005·Granted Sep 12, 2006·116 cites·19 claims
- 4598US7009877B1Three-terminal magnetostatically coupled spin transfer-based MRAM cellGRANDIS INC·Filed 2003·Granted Mar 7, 2006·389 cites·31 claims
- 4698US6933155B2Methods for providing a sub .15 micron magnetic memory structureGRANDIS INC·Filed 2003·Granted Aug 23, 2005·263 cites·13 claims
- 4798US6934129B1Magnetoresistive sensor with overlapping lead layers including alpha tantalum and conductive layersWESTERN DIGITAL FREMONT INC·Filed 2002·Granted Aug 23, 2005·160 cites·21 claims
- 4898US6920063B2Magnetic element utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2003·Granted Jul 19, 2005·201 cites·28 claims
- 4998US6847547B2Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2003·Granted Jan 25, 2005·327 cites·33 claims
- 5098US6829161B2Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic elementGRANDIS INC·Filed 2003·Granted Dec 7, 2004·309 cites·45 claims
Showing the top 50 of 210 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →