Inventor · disambiguated record
Yi-Jing Lee
Also filed as: LEE YI-JING
87 granted patents·6 pending applications·2,699 citations·filing 2012–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD76TAIWAN SEMICONDUCTOR MFG11IND TECH RES INST2LEE YI-JING2LI SHERRY1
Top patents by PatentIndex Score
93 records- 0199US9859380B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 2, 2018·205 cites·20 claims
- 0299US9601342B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·288 cites·20 claims
- 0399US9548303B2FinFET devices with unique fin shape and the fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 17, 2017·1.3k cites·20 claims
- 0498US9287382B1Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·46 cites·20 claims
- 0598US8742509B2Apparatus and method for FinFETsLEE YI-JING·Filed 2012·Granted Jun 3, 2014·188 cites·13 claims
- 0697US11916071B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0797US9768178B2Semiconductor device, static random access memory cell and manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·11 cites·20 claims
- 0897US8815712B2Method for epitaxial re-growth of semiconductor regionWAN CHENG-TIEN·Filed 2012·Granted Aug 26, 2014·477 cites·20 claims
- 0996US10490552B2FinFET device having flat-top epitaxial features and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 26, 2019·16 cites·20 claims
- 1095US10804163B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·9 cites·20 claims
- 1195US9825036B2Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·9 cites·20 claims
- 1295US9780174B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 3, 2017·10 cites·20 claims
- 1395US9159824B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 13, 2015·14 cites·20 claims
- 1493US10510753B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1593US9196709B2Methods for forming semiconductor regions in trenchesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·14 cites·19 claims
- 1693US8994002B2FinFET having superlattice stressorLEE YI-JING·Filed 2012·Granted Mar 31, 2015·15 cites·20 claims
- 1792US11508627B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims
- 1892US10515858B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·5 cites·20 claims
- 1991US11769771B2FinFET device having flat-top epitaxial features and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·1 cites·20 claims
- 2091US10084069B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·4 cites·20 claims
- 2191US9087902B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 21, 2015·8 cites·20 claims
- 2290US12369342B2Increasing source/drain dopant concentration to reduced resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 2390US2025338609A1Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2489US11521969B2Isolation structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 2589US11037826B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·2 cites·20 claims
- 2689US10355105B2Fin field-effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·4 cites·20 claims
- 2789US2024397692A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2888US12426358B2Semiconductor device having epitaxy source/drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 2988US11862683B2Ultra-thin fin structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 3087US10546784B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·3 cites·20 claims
- 3187US10504993B2FinFET semiconductor device with germanium diffusion over silicon finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 10, 2019·3 cites·20 claims
- 3287US9748143B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 29, 2017·3 cites·20 claims
- 3386US12062710B2Increasing source/drain dopant concentration to reduced resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 3486US10164023B2FinFETs with strained well regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 3586US9276117B1Structure and method and FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 1, 2016·7 cites·20 claims
- 3685US9559099B2Apparatus and method for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·5 cites·19 claims
- 3784US11315837B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·1 cites·20 claims
- 3884US9390982B2CMOS devices with reduced leakage and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 12, 2016·3 cites·20 claims
- 3983US12495607B2Isolation structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·20 claims
- 4083US12363958B2Ultra-thin fin structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 4183US12075607B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 27, 2024·0 cites·20 claims
- 4283US10510868B2Fin Field-Effect Transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 4383US9922975B2Integrated circuit having field-effect trasistors with dielectric fin sidewall structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 20, 2018·2 cites·20 claims
- 4483US2025301714A1Ultra-thin fin structure and method of fabricating the sameLI SHERRY·Filed 2025·Application pending·0 cites
- 4582US11158719B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·3 cites·20 claims
- 4682US10516037B2Method of forming shaped source/drain epitaxial layers of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 24, 2019·2 cites·20 claims
- 4781US11189697B2Ultra-thin fin structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·1 cites·20 claims
- 4879US11908749B2Method of metal gate formation and structures formed by the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 4979US9553012B2Semiconductor structure and the manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 24, 2017·3 cites·21 claims
- 5078US12363993B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Yi-Jing Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →