Inventor · disambiguated record

Ying-Keung Leung

Also filed as: LEUNG YING-KEUNG · PRADEEP YELEHANKA RAMACHANDRAM

125 granted patents·7 pending applications·3,741 citations·filing 1999–2025

99Inventor score

Technology areasH10P H10D H10W H01L G11C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD93 CHARTERED SEMICONDUCTOR MFG25 GLOBALFOUNDRIES SG PTE LTD4 PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC2 TAIWAN SEMICONDUCTOR MFG2

Top patents by PatentIndex Score

132 records

0199US10157799B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 18, 2018·135 cites·20 claims
0299US9887269B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 6, 2018·151 cites·20 claims
0399US9818872B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·166 cites·18 claims
0499US9608116B2FINFETs with wrap-around silicide and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·1.3k cites·20 claims
0599US9418897B1Wrap around silicide for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·239 cites·20 claims
0698US11929417B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
0798US11355611B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
0898US10164012B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·32 cites·16 claims
0998US9935199B2FinFET with source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 3, 2018·27 cites·20 claims
1098US9559184B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·24 cites·20 claims
1198US6492726B1Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnectionCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Dec 10, 2002·267 cites·28 claims
1297US11942548B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·3 cites·20 claims
1397US11894275B2FinFET device having oxide region between vertical fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
1497US11777009B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·2 cites·20 claims
1597US10164069B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·13 cites·20 claims
1697US9911824B2Semiconductor structure with multi spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·20 cites·20 claims
1797US9773705B2FinFET channel on oxide structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 26, 2017·12 cites·20 claims
1897US6300177B1Method to form transistors with multiple threshold voltages (VT) using a combination of different work function gate materialsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 9, 2001·175 cites·26 claims
1996US10505022B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
2096US9941374B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·10 cites·20 claims
2196US9917178B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 13, 2018·10 cites·20 claims
2296US9716096B1Semiconductor structure with feature spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·16 cites·20 claims
2396US9508858B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·11 cites·20 claims
2496US6461900B1Method to form a self-aligned CMOS inverter using vertical device integrationCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 8, 2002·141 cites·22 claims
2595US10763368B2Stacked gate-all-around FinFET and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·6 cites·20 claims
2695US10497792B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·6 cites·20 claims
2795US9966471B2Stacked Gate-All-Around FinFET and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 8, 2018·9 cites·20 claims
2894US11961892B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·1 cites·20 claims
2994US10170365B2Wrap around silicide for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·6 cites·20 claims
3094US9899387B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 20, 2018·11 cites·20 claims
3194US6747314B2Method to form a self-aligned CMOS inverter using vertical device integrationCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jun 8, 2004·93 cites·11 claims
3294US6313008B1Method to form a balloon shaped STI using a micro machining technique to remove heavily doped siliconCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Nov 6, 2001·90 cites·30 claims
3393US11276763B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·4 cites·20 claims
3493US10522416B2FinFET device having oxide region between vertical fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
3593US9711533B2FinFET devices having different source/drain proximities for input/output devices and non-input/output devices and the method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·8 cites·20 claims
3692US11004934B2Semiconductor device including a liner layer between a channel and a source/drain epitaxial layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 11, 2021·5 cites·20 claims
3792US10074668B2Input/output (I/O) devices with greater source/drain proximity than non-I/O devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 11, 2018·6 cites·20 claims
3891US10096693B2Method for manufacturing semiconductor structure with multi spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 9, 2018·6 cites·20 claims
3991US10008414B2System and method for widening Fin widths for small pitch FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 26, 2018·5 cites·20 claims
4091US9960273B2Integrated circuit structure with substrate isolation and un-doped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 1, 2018·7 cites·20 claims
4191US9953881B2Method of forming a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·5 cites·20 claims
4291US9899269B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 20, 2018·6 cites·20 claims
4391US6406945B1Method for forming a transistor gate dielectric with high-K and low-K regionsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Jun 18, 2002·59 cites·17 claims
4490US11437513B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 6, 2022·3 cites·20 claims
4590US11410887B2FinFET device having oxide region between vertical fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·3 cites·20 claims
4690US10431473B2FINFET with source/drain structure and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·5 cites·20 claims
4790US10355137B2FINFETs with wrap-around silicide and method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·4 cites·20 claims
4890US9876108B2Wrap around silicide for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 23, 2018·4 cites·20 claims
4990US2025311371A1Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
5089US10868150B2Devices including gate spacer with gap or void and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims

Showing the top 50 of 132 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when Ying-Keung Leung files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →