Inventor · disambiguated record
Yin-Kai Liao
Also filed as: LIAO YIN-KAI
17 granted patents·11 pending applications·8 citations·filing 2009–2025
88Inventor score
Top patents by PatentIndex Score
28 records- 0194US12015099B2Semiconductor sensor and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·2 cites·20 claims
- 0294US11855237B2Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
- 0388US12495632B2Semiconductor image sensor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 9, 2025·1 cites·20 claims
- 0486US11901393B2Image sensor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·20 claims
- 0583US12166054B2Image sensor with passivation layer for dark current reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 0683US2025359357A1Image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0783US2025048763A1Image sensor with passivation layer for dark current reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0882US12363969B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0981US2025301736A1Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1079US12148853B2Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1178US11908900B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1278US2024387766A1Germanium-Based Sensor with Junction-Gate Field Effect Transistor and Method of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1378US2024387587A1Semiconductor image sensor and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1478US2024372028A1Method of manufacturing an optical sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1578US2024339555A1Semiconductor sensor and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1677US12261190B2Vertically stacked light sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1776US2024145520A1Methods for fabricating image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1873US11848345B2Image sensor with passivation layer for dark current reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 1972US2025194269A1Vertically stacked light sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2069US12125934B2Method of manufacturing an optical sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
- 2169US11600737B2Germanium-based sensor with junction-gate field effect transistor and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 2268US2023343885A1Image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2362US11508817B2Passivation layer for epitaxial semiconductor processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
- 2460US9041841B2Image sensor having enhanced backside illumination quantum efficiencyLIAO YIN-KAI·Filed 2009·Granted May 26, 2015·2 cites·20 claims
- 2558US2025015102A1Multiple wavelength band light sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2655US10269848B2Image sensor having enhanced backside illumination quantum efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 2752US9640582B2Method of manufacturing image sensor having enhanced backside illumination quantum efficiencyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 2, 2017·0 cites·20 claims
- 2840US8778717B2Local oxidation of silicon processes with reduced lateral oxidationHSIAO RU-SHANG·Filed 2010·Granted Jul 15, 2014·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →