Inventor · disambiguated record
Yih-Ann Lin
Also filed as: LIN YIH-ANN
62 granted patents·11 pending applications·255 citations·filing 2001–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD45TAIWAN SEMICONDUCTOR MFG16LIN YIH-ANN4Lin yu chao4CHEN RYAN CHIA-JEN1
Top patents by PatentIndex Score
73 records- 0196US9825173B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 21, 2017·11 cites·20 claims
- 0295US12015071B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
- 0395US10038095B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
- 0494US9934971B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·6 cites·20 claims
- 0594US9190496B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·14 cites·20 claims
- 0694US7759239B1Method of reducing a critical dimension of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 20, 2010·36 cites·20 claims
- 0793US11901408B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0893US9640398B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 2, 2017·6 cites·20 claims
- 0993US8383502B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·11 cites·15 claims
- 1093US8053323B1Patterning methodology for uniformity controlTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·15 cites·20 claims
- 1192US11462408B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·20 claims
- 1292US11355616B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
- 1392US10916477B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·10 cites·20 claims
- 1492US9601388B2Integrated high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 21, 2017·6 cites·20 claims
- 1592US8772183B2Method of forming an integrated circuitHSIEH TZU-YEN·Filed 2011·Granted Jul 8, 2014·11 cites·20 claims
- 1691US10923565B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·5 cites·20 claims
- 1790US10665457B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·3 cites·20 claims
- 1890US10658509B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·4 cites·20 claims
- 1990US8273632B2Patterning methodology for uniformity controlLin yu chao·Filed 2011·Granted Sep 25, 2012·12 cites·20 claims
- 2089US9633905B2Semiconductor fin structures and methods for forming the sameCHEN RYAN CHIA-JEN·Filed 2012·Granted Apr 25, 2017·8 cites·9 claims
- 2187US12471310B2Method of making a FinFET device including a step of removing a portion of a finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 2287US2025324683A1Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2386US9059085B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 16, 2015·4 cites·20 claims
- 2486US8003507B2Method of integrating high-K/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 23, 2011·8 cites·8 claims
- 2585US12376351B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 2685US12068199B2Methods for forming fin field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 2785US8841731B2Integrated high-k/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 23, 2014·5 cites·17 claims
- 2884US9960160B2Method of forming a single metal that performs N work function and P work function in a high-k/metal gate processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 1, 2018·5 cites·13 claims
- 2983US12408412B2Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
- 3083US12027370B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3181US10991627B2Methods for forming fin field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·1 cites·20 claims
- 3281US2025301757A1Air spacers around contact plugs and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3378US8524588B2Method of forming a single metal that performs N work function and P work function in a high-k/metal gate processLIN YIH-ANN·Filed 2009·Granted Sep 3, 2013·5 cites·17 claims
- 3478US7776755B2Solution for polymer and capping layer removing with wet dipping in HK metal gate etching processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 17, 2010·5 cites·20 claims
- 3578US2025359244A1Tunable structure profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3677US11670552B2Methods for forming fin field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 3776US12015030B2Gate stacks for semiconductor devices of different conductivity typesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 3876US9257426B2Integrated high-k/metal gate in CMOS process flowTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 3976US9153440B2Method of forming a semiconductor deviceLIN CHIH-HAN·Filed 2012·Granted Oct 6, 2015·4 cites·20 claims
- 4076US8148249B2Methods of fabricating high-k metal gate devicesLIN YIH-ANN·Filed 2009·Granted Apr 3, 2012·4 cites·17 claims
- 4175US11908939B2Method of making a FinFET device including a step of recessing a subset of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 4273US2024363431A1Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4372US12490487B2Tunable structure profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 4472US11145752B2Residue removal in metal gate cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·1 cites·19 claims
- 4572US11121255B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 4672US11094825B2FinFET device with fins of non-uniform widthTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 4772US7022610B2Wet cleaning method to eliminate copper corrosionTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 4, 2006·14 cites·21 claims
- 4870US12087639B2Fin field-effect transistor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4970US8304349B2Method to integrate gate etching as all-in-one process for high K metal gateLIN JR JUNG·Filed 2009·Granted Nov 6, 2012·3 cites·17 claims
- 5066US10763366B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →